Lateral high-voltage transistor
First Claim
1. A lateral high-voltage transistor, comprising:
- a semiconductor body including a semiconductor substrate and an epitaxial layer, said semiconductor substrate being of a first conductivity type and having a first dopant concentration, said epitaxial layer being provided on said semiconductor substrate and being of a second conductivity type, said second conductivity type being opposite said first conductivity type;
a MOSFET configuration including a drain terminal region and a source terminal region provided in said semiconductor body, and a gate terminal region;
a semiconductor zone of said first conductivity type provided under said gate terminal region and being embedded in said epitaxial layer; and
said epitaxial layer having trenches formed therein, said trenches having walls formed by said epitaxial layer, said walls being of said first conductivity type and having a second dopant concentration higher than said first dopant concentration, said trenches being organized in lines and rows between said source terminal region and said drain terminal region.
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Abstract
A lateral high-voltage transistor has a semiconductor body made of a lightly doped semiconductor substrate of a first conductivity type and an epitaxial layer of a second conductivity type. The epitaxial layer is provided on the semiconductor substrate. The lateral high-voltage transistor has a drain electrode, a source electrode, a gate electrode and a semiconductor zone of the first conductivity type which is provided under the gate electrode and is embedded in the epitaxial layer. Between the source electrode and the drain electrode trenches are provided in lines and rows in the semiconductor layer. The walls of the trenches are highly doped with dopants of the first conductivity type.
98 Citations
6 Claims
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1. A lateral high-voltage transistor, comprising:
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a semiconductor body including a semiconductor substrate and an epitaxial layer, said semiconductor substrate being of a first conductivity type and having a first dopant concentration, said epitaxial layer being provided on said semiconductor substrate and being of a second conductivity type, said second conductivity type being opposite said first conductivity type;
a MOSFET configuration including a drain terminal region and a source terminal region provided in said semiconductor body, and a gate terminal region;
a semiconductor zone of said first conductivity type provided under said gate terminal region and being embedded in said epitaxial layer; and
said epitaxial layer having trenches formed therein, said trenches having walls formed by said epitaxial layer, said walls being of said first conductivity type and having a second dopant concentration higher than said first dopant concentration, said trenches being organized in lines and rows between said source terminal region and said drain terminal region. - View Dependent Claims (2, 3, 4, 5, 6)
said epitaxial layer has a surface;
strip-shaped regions of said first conductivity type are disposed on said surface of said epitaxial layer, said strip-shaped regions have a third dopant concentration lower than said second dopant concentration; and
each of said strip-shaped regions connects respective ones of said trenches along a respective one of said lines between said source terminal region and said drain terminal region.
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3. The lateral high-voltage transistor according to claim 1, wherein said epitaxial layer has a layer thickness of approximately 20 μ
- m, said trenches have a depth of approximately 18 μ
m and a diameter of approximately 1 μ
m.
- m, said trenches have a depth of approximately 18 μ
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4. The lateral high-voltage transistor according to claim 1, wherein:
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said trenches organized in said lines and said rows have a given distance between respective ones of said rows and have a breakdown voltage with respect to said epitaxial layer;
said epitaxial layer of said second conductivity type has given regions provided between said rows; and
said given distance being dimensioned such that said given regions reach a charge-carrier-depleted state before said trenches reach said breakdown voltage with respect to said epitaxial layer.
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5. The lateral high-voltage transistor according to claim 1, wherein said trenches form a ring-shaped structure having a center, and said drain terminal region is disposed in said center of said ring-shaped structure.
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6. The lateral high-voltage transistor according to claim 1, wherein said trenches form an elongate, ellipsoidal structure having a center, and said drain terminal region is disposed in said center of said elongate, ellipsoidal structure.
Specification