×

Lateral high-voltage transistor

  • US 6,326,656 B1
  • Filed: 02/24/2000
  • Issued: 12/04/2001
  • Est. Priority Date: 06/24/1998
  • Status: Expired due to Term
First Claim
Patent Images

1. A lateral high-voltage transistor, comprising:

  • a semiconductor body including a semiconductor substrate and an epitaxial layer, said semiconductor substrate being of a first conductivity type and having a first dopant concentration, said epitaxial layer being provided on said semiconductor substrate and being of a second conductivity type, said second conductivity type being opposite said first conductivity type;

    a MOSFET configuration including a drain terminal region and a source terminal region provided in said semiconductor body, and a gate terminal region;

    a semiconductor zone of said first conductivity type provided under said gate terminal region and being embedded in said epitaxial layer; and

    said epitaxial layer having trenches formed therein, said trenches having walls formed by said epitaxial layer, said walls being of said first conductivity type and having a second dopant concentration higher than said first dopant concentration, said trenches being organized in lines and rows between said source terminal region and said drain terminal region.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×