Hermetically sealed transducer and methods for producing the same

• US 6,326,682 B1
• Filed: 12/21/1998
• Issued: 12/04/2001
• Est. Priority Date: 12/21/1998
• Status: Expired due to Term

• Current Assignee: Kulite Semiconductor Products Inc
• Original Assignee: Kulite Semiconductor Products Inc
• Inventors: Ned, Alexander, Kurtz, Anthony D.
• Primary Examiner(s): POTTER, ROY KARL
• Application Number:
  US09/217,877
• Time in Patent Office: 1,079 Days
• Field of Search: 257/678, 257/415, 257/417, 257/419
• US Class Current: 257/678
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81B 2203/0127 Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
• CPC Class Codes: B81B 2203/0315 Cavities
• CPC Class Codes: B81B 7/0077 Other packages not provided for in groups B81B7/0035 - B81B7/0074
• CPC Class Codes: B81C 1/00269 Bonding of solid lids or wafers to the substrate
• CPC Class Codes: B81C 2203/0181 Using microheaters for bonding the lid

Abstract

A reduced size, hermetically sealed semiconductor transducer and methods for fabricating the same. In a preferred embodiment, the transducer comprises a transducer wafer including a diaphragm which deflects upon the application of a force thereto. At least one semiconductor transducer element and one electrical contact are disposed on a top surface of the transducer wafer, with the electrical contact coupled to the semiconductor element and extending to a peripheral portion of the wafer. A cover member is provided that is dimensioned to surround the semiconductor element. A peripheral glass frit bond is formed between the cover member and the transducer wafer, and between the cover member and at least a portion of the electrical contact. An aperture is formed in a top portion of the cover member, positioned above a region bounded by the peripheral glass bond. This aperture functions to prevent air gap formation in the peripheral glass frit bond. A sealing member hermetically seals the aperture, whereby a vacuum is maintained between the transducer element and the cover member, the transducer element thereby being hermetically sealed from the external environment, while at least a portion of the electrical contact remains exposed to enable subsequent wire bonding thereto.

Claims

1. A hermetically sealed semiconductor transducer, comprising:

a transducer wafer having at least one semiconductor element disposed on a top surface thereof;

at least one electrical contact, coupled to said semiconductor element, disposed on said top surface of said transducer wafer and extending from said semiconductor element to an outer portion of said top surface;

a cover member dimensioned to surround said semiconductor element;

a peripheral glass frit bond between said transducer wafer and said cover member and between at least a portion of said electrical contact and said cover member;

said cover member having an aperture in a top portion thereof, said aperture positioned above a region bounded by said peripheral glass frit bond, said aperture employed to prevent air gap formation in said peripheral glass frit bond;

a sealing member for hermetically sealing said aperture;

whereby a vacuum is maintained between said semiconductor element and said cover member, said semiconductor element thereby being hermetically sealed from the external environment, while at least a portion of said electrical contact remains exposed to enable external wire attachment thereto.

2. The transducer according to claim 1, wherein said cover member comprises a silicon wafer.

3. The transducer according to claim 1, wherein said peripheral glass frit bond comprises pyroceram.

4. The transducer according to claim 1, wherein said electrical contact comprises a contact terminal of a given thickness on said outer portion of said dielectric layer, said contact terminal adapted to connect to an external wire, and at least one electrical interconnection of a thickness generally equal to said given thickness, said electrical interconnection disposed along said top surface of said dielectric layer and electrically connecting said at least one transducer element with said electrical contact terminal and wherein said peripheral glass bond is between at least a portion of said interconnection and said cover member.

5. The transducer according to claim 4 wherein said transducer element, said electrical contact and said interconnection are comprised of highly doped silicon.

6. The transducer according to claim 4, wherein said diaphragm having a central region which deflects in response to an external force applied to said diaphragm, said central region defining an active area of said transducer, said semiconductor elements being located within said active area and changing resistance in response to said external force.

7. The transducer according to claim 6 wherein said peripheral glass frit bond is formed only in a non-active area of said transducer, said non-active area being an area of said transducer other than said active area.

8. The transducer according to claim 1 wherein:

said transducer wafer comprises a silicon diaphragm; and

said at least one semiconductor element and said at least one electrical contact are disposed on said silicon diaphragm.

9. The transducer according to claim 8, wherein said cover member comprises glass and wherein said sealing member comprises silicon.

10. A hermetically sealed semiconductor transducer, comprising:

a diaphragm having a dielectric layer disposed thereon, with at least one semiconductor element disposed on a top surface of said dielectric layer;

at least one electrical contact, coupled to said semiconductor element, disposed on said top surface of said dielectric layer and extending from said semiconductor element to an outer portion of said top surface;

a cover member dimensioned to surround said semiconductor element;

a peripheral glass frit bond between said dielectric layer and said cover member, and between at least a portion of said electrical contact and said cover member;

said cover member having an aperture in a top portion thereof, said aperture positioned above a region bounded by said peripheral glass frit bond, said aperture employed to prevent air gap formation in said peripheral glass frit bond;

a sealing member for hermetically sealing said aperture;

whereby a vacuum is maintained between said semiconductor element and said cover member, said semiconductor element thereby being hermetically sealed from the external environment, while at least a portion of said electrical contact remains exposed to enable external wire attachment thereto.

11. The transducer according to claim 10 wherein said at least one electrical contact comprises at least a pair of electrical contacts disposed on opposite sides of said top dielectric surface, and wherein said cover member being generally congruent to said dielectric layer and having cut-outs corresponding to at least said pair of electrical contacts whereby said pair of electrical contacts remains exposed when said cover member is bonded to said transducer.

12. The transducer according to claim 10 wherein said sealing member comprises a glass sheet electrostatically bonded to said cover member.

13. The transducer according to claim 12 wherein said dielectric layer is of a generally square geometry, with said cover member and said glass sheet being generally congruent to said dielectric layer, with cutouts in each of said cover member and said glass sheet generally corresponding to said at least one pair of electrical contacts to enable external connection thereto.