Bistable mechanical sensors capable of threshold detection and automatic elimination of excessively high amplitude data

• US 6,327,909 B1
• Filed: 11/30/1999
• Issued: 12/11/2001
• Est. Priority Date: 11/30/1999
• Status: Expired due to Term

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Hung, Elmer, Berlin, Andrew A., Zhao, Feng
• Primary Examiner(s): KWOK, HELEN C
• Application Number:
  US09/450,442
• Time in Patent Office: 742 Days
• Field of Search: 735/141.6, 735/142.5, 735/143.8, 738/626.25, 738/626.21, 738/626.26, 738/626.27, 736/51, 736/49, 200/181, 200/61.48, 200/61.51
• US Class Current: 73/514.16
• CPC Class Codes: G01P 15/131 with electrostatic counterbalancing means
• CPC Class Codes: G01P 15/135 by making use of contacts which are actuated by a movable inertial mass
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends
• CPC Class Codes: H01H 2001/0063 having electrostatic latches, i.e. the activated position is kept by electrostatic forces other than the activation force
• CPC Class Codes: H01H 35/14 Switches operated by change of acceleration, e.g. by shock or vibration, inertia switch wherein the liquid constitutes a contact of the switch H01H29/002

Abstract

A bistable sensor with a tunable threshold for use in microelectromechanical systems. The sensor uses electrostatic force to modify the threshold and to disable the sensor in a deflected position once a sustained extreme in vibration is detected. Potential applications include mechanical implementations of signature analysis to automatically eliminate large amplitude noise at a specific frequency, shock detection without requiring quiescent DC power consumption, and determination of the magnitude of a shock.

Claims

1. A bistable threshold sensor comprising:

a substrate;

a resonant structure over the substrate with a fixed portion and a free portion as a first electrode;

a ground conductor layer on the substrate as a second electrode;

an insulating layer over the ground conductor;

a contact conductor on a portion of the insulating layer as a third electrode, wherein the free portion of the resonant structure contacts the contact conductor when the resonant structure is in a deflected position; and

a voltage source for providing a changeable bias voltage between the first electrode and the second electrode that allows a detection threshold to be electrically modified.

2. The threshold sensor of claim 1, wherein the resonant structure has dimples protruding from a surface opposing the contact conductor.

3. The threshold sensor of claim 1, wherein the resonant structure is one selected from the group comprising a cantilevered beam, a doubly fixed beam, and a proof mass.

4. The threshold sensor of claim 1, further including a sensor to detect the motion of the resonant structure.

5. The threshold sensor of claim 1, further including a voltage between the first and third electrodes.

6. A bistable threshold sensor comprising:

a substrate;

a resonant structure with a fixed portion and a free portion with respect to the substrate as a first electrode;

an insulating layer over the substrate;

a ground conductor layer on a portion of the insulating layer as a second electrode;

a contact conductor on another portion of the insulating layer as a third electrode, wherein the free portion of the resonant structure contacts the contact conductor when the resonant structure is in a deflected position; and

a voltage source for providing a changeable bias voltage between the first electrode and the second electrode that allows a detection threshold to be electrically modified.

7. A bistable threshold sensor comprising:

a substrate;

a ground conductor layer formed over the substrate;

an insulator layer formed over the ground conductor;

a cantilevered beam formed on the insulating layer with a free end and a fixed end;

a contact conductor formed on a portion of the insulator as a third electrode, wherein the free end of the cantilevered beam contacts the contact conductor when the cantilevered beam is in a deflected position; and

a voltage source for providing a changeable bias voltage between the first electrode and the second electrode to modify a detection threshold and to hold the cantilevered beam in a deflected position once the detection threshold is reached.

8. The threshold sensor of claim 7, wherein the free end of the cantilevered beam has dimples protruding from a surface opposing the contact conductor.

9. The threshold sensor of claim 7, further including a sensor to detect the motion of the cantilevered beam.

10. The threshold sensor of claim 7, further including a voltage between the first and third electrodes.

11. A bistable threshold sensor comprising:

a substrate;

a resonant structure over the substrate as a first electrode;

a ground conductor over the substrate as a second electrode;

an insulator layer over the ground conductor;

a current limiting resistor connected between the first and second electrodes; and

an adjustable bias voltage between the first and second electrodes that allows a detection threshold to be electrically modified.

12. The threshold sensor of claim 11, wherein the resonant structure has dimples protruding from a surface opposing the contact conductor.

13. The threshold sensor of claim 11, wherein the resonant structure is one selected from the group comprising a cantilevered beam, a doubly fixed beam, and a proof mass.

14. The threshold sensor of claim 11, further including a sensor to detect the motion of the resonant structure.

15. A method of threshold detection comprising the steps:

providing a bistable threshold sensor having a detection threshold, the sensor comprising

a resonant structure as a first electrode, wherein the resonant structure has an elastic restoring force,

a ground conductor as a second electrode,

a contact conductor as a third electrode, wherein a gap exists between the first and second electrodes,

an adjustable bias voltage between the first and second electrodes creating a nonlinear electrostatic force, wherein the threshold is determined by the elastic restoring force, the gap, and the electrostatic force;

electrostatically locking the resonant structure in a deflected position once the detection threshold is reached.

16. The method of claim 15, further including a step of measuring movement of the resonant structure.

17. The method of claim 15, further including a step of applying a voltage between the first and third electrodes to determine whether the detection threshold was reached.

18. The method of claim 15, wherein the threshold is adjusted by changing the bias voltage.

19. The method of measuring the magnitude of a shock including the steps of:

providing a plurality of bistable sensors with electrically tunable thresholds;

setting the threshold of each sensor to a different value;

determining the magnitude of the shock by determining which ones of the plurality of bistable sensors reached its threshold and which of the plurality of bistable sensors have not reached their thresholds.

20. A method of threshold detection comprising the steps:

providing an array of bistable sensors having a threshold acting as a signal processing fuse to detect a desired frequency spectrum within a vibration stimuli, the sensors comprising,

a resonant structure having an elastic restoring force as a first electrode,

a ground conductor as a second electrode, wherein a gap exists between the first and second electrodes,

a contact conductor as a third electrode,

an adjustable bias voltage between the first and a second electrodes creating a nonlinear electrostatic force, wherein the threshold is determined by the elastic restoring force, the gap, and the electrostatic force;

electrostatically locking the resonant structure in a deflected position once the vibration stimuli reaches the threshold; and

releasing the resonant structure to detect the desired frequency spectrum once the vibration stimuli falls below the detection threshold by decreasing the bias voltage.