Multi-layer sputter deposition apparatus

• US 6,328,858 B1
• Filed: 09/23/1999
• Issued: 12/11/2001
• Est. Priority Date: 10/01/1998
• Status: Expired due to Term

• Current Assignee: Tel Nexx, Inc. (Tokyo Electron Limited)
• Original Assignee: Nexx Systems Packaging, LLC
• Inventors: Felsenthal, David, Lee, Chunghsin, Sferlazzo, Piero
• Primary Examiner(s): Nguyen, Nam
• Assistant Examiner(s): VerSteeg, Steven H
• Application Number:
  US09/401,754
• Time in Patent Office: 810 Days
• Field of Search: 204/192.12, 204/192.15, 204/298.09, 204/298.11, 204/298.16, 204/298.2, 204/298.22, 204/298.26, 204/298.25, 204/298.29, 204/298.35, 156/345, 118/719
• US Class Current: 204/192.15
• CPC Class Codes: C23C 14/027 Graded interfaces
• CPC Class Codes: C23C 14/3407 Cathode assembly for sputtering apparatus, e.g. Target
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: C23C 14/352 using more than one target C23C14/56 takes precedence
• CPC Class Codes: C23C 14/566 using a load-lock chamber
• CPC Class Codes: C23C 14/568 Transferring the substrates through a series of coating stations C23C14/562 takes precedence
• CPC Class Codes: H01J 37/3405 Magnetron sputtering
• CPC Class Codes: H01J 37/3429 Plural materials

Abstract

A multi-layer sputter deposition chamber or cluster tool module is described. The sputter deposition chamber includes a plurality of magnetrons mounted on a rotatable member that defines an aperture. A predetermined one of the plurality of magnetrons is positionable proximate to a substrate in the sputter deposition chamber. A transport mechanism transports the substrate in a path of the sputtered ions in a first and a second direction that is substantially opposite to the first direction.

Claims

1. A multi-layer sputter deposition chamber comprising:

a) a plurality of magnetrons mounted on a rotatable member, wherein a predetermined one of the plurality of magnetrons is positionable proximate to at least one substrate in the sputter deposition chamber;

b) a transport mechanism that transports the at least one substrate proximate to the predetermined one of the plurality of magnetrons in a path of the sputtered ions in a first and a second direction that is substantially opposite to the first direction; and

c) a substrate holder attached to the transport mechanism for supporting the at least one substrate.

2. The deposition chamber of claim 1 further comprising a processor in electrical communication with the rotatable member, wherein the processor instructs the rotatable member to position a predetermined one of the plurality of magnetrons proximate to a substrate.

3. The deposition chamber of claim 1 further comprising a processor in electrical communication with the transport mechanism, wherein the processor instructs the transport mechanism to transport the substrate proximate to a predetermined one of the plurality of magnetrons.

4. The deposition chamber of claim 1 further comprising a shield that prevents sputtered material from reaching the plurality of magnetrons.

5. The deposition chamber of claim 1 further comprising a sputtering target positioned proximate to each of the plurality of magnetrons.

6. The deposition chamber of claim 5 wherein at least one of the sputtering targets comprises at least two materials.

7. The deposition chamber of claim 1 wherein the substrate holder supports a plurality of substrates for simultaneous sputtering of ions on the plurality of substrates.

8. The deposition chamber of claim 1 wherein the transport mechanism extends the substrate holder prior to sputtering, and retracts the substrate holder after sputtering.

9. A multi-layer sputter deposition chamber comprising:

a) a plurality of magnetrons mounted on a rotatable member, wherein a predetermined one of the plurality of magnetrons is positionable proximate to a substrate in the sputter deposition chamber, and the rotatable member defines an aperture; and

b) a transport mechanism that transports the substrate proximate to the predetermined one of the plurality of magnetrons in a path of the sputtered ions in a first and a second direction that is substantially opposite to the first direction.

10. The deposition chamber of claim 9 wherein the aperture is maintained at substantially atmospheric pressure.

11. The deposition chamber of claim 9 wherein the rotatable member that defines the aperture comprises a ferrofluidic conduit that receives at least one of electrical wires and cooling fluid.

12. The deposition chamber of claim 9 further comprising a bearing that rotatably supports the rotatable member.

13. A method of sputter depositing multiple layers of material onto a substrate, the method comprising:

a) positioning a first sputtering apparatus comprising a first sputtering target proximate to a substrate in a sputter deposition chamber;

b) activating the first sputtering apparatus thereby sputtering first target material onto the substrate;

c) transporting the substrate in a path of sputtered first target material in a first direction;

d) transporting the substrate in a path of sputtered first target material in a second direction that is substantially opposite to the first direction;

e) positioning a second sputtering apparatus comprising a second sputtering target proximate to the substrate in the sputter deposition chamber;

f) activating the second sputtering apparatus thereby sputtering second target material onto the substrate;

g) transporting the substrate in a path of sputtered second target material in the first direction; and

h) transporting the substrate in a path of sputtered second target material in the second direction that is substantially opposite to the first direction.

14. The method of claim 13 wherein at least one of positioning the first sputtering apparatus and positioning the second sputtering apparatus comprises positioning one of a plurality of magnetrons mounted on a rotatable member in the sputter deposition chamber.

15. The method of claim 13 wherein at least one of sputtering the first target material and sputtering the second target material comprises sputtering material from a compound sputtering target.

16. A method of phase-in deposition, the method comprising the steps of:

a) positioning a first sputtering apparatus with a first sputtering target proximate to a substrate in a sputter deposition chamber;

b) activating the first sputtering apparatus thereby sputtering a first target material onto the substrate;

c) transporting the substrate in a path of sputtered first target material;

d) positioning a second sputtering apparatus with a compound sputtering target comprising the first target material and a second target material proximate to the substrate in the sputter deposition chamber;

e) activating the second sputtering apparatus thereby sputtering first and second target material onto the substrate;

f) transporting the substrate in a path of first and second target material ions;

g) positioning a third sputtering apparatus with a third sputtering target comprising the second target material proximate to the substrate in the sputter deposition chamber;

h) activating the third sputtering apparatus thereby sputtering second target material onto the substrate; and

i) transporting the substrate in a path of second target material ions.

17. The method of claim 16 wherein the first material comprises chromium and the second material comprises copper.

18. The method of claim 16 wherein the step of activating the second sputtering apparatus further comprises sputtering first and second target material in a predetermined proportion onto the substrate.

19. An apparatus for simultaneously processing substrates, the apparatus comprising:

a) a substrate storage chamber positioned around a central aperture, the storage chamber storing at least one substrate prior to processing and at least one substrate after processing;

b) at least one process chamber positioned around the central aperture;

c) a multi-layer sputter deposition chamber positioned around the central aperture, the chamber comprising;

i) a plurality of magnetrons mounted on a rotatable member, wherein a predetermined one of the plurality of magnetrons is positionable proximate to a substrate in the multi-layer sputter deposition chamber; and

ii) a transport mechanism that transports the substrate proximate to the predetermined one of the plurality of magnetrons in a first and a second direction; and

d) a second transport mechanism positioned in the aperture that moves at least one substrate into and out of the substrate storage chamber and the multi-layer sputter deposition chamber.

20. The apparatus of claim 19 wherein the rotatable member defines an aperture.

21. The apparatus of claim 19 wherein the at least one process chamber comprises an etching chamber.

22. The apparatus of claim 19 wherein the at least one process chamber comprises a plasma cleaning chamber.

23. The apparatus of claim 19 wherein the at least one process chamber comprises a deposition chamber.