Method for producting a filter

• US 6,328,876 B1
• Filed: 01/28/2000
• Issued: 12/11/2001
• Est. Priority Date: 07/28/1997
• Status: Expired due to Fees

• Current Assignee: NFT Nanofiltertechnik Gesellschaft mit beschränkter Haftung
• Original Assignee: NFT Nanofiltertechnik Gesellschaft mit beschränkter Haftung
• Inventors: Scheybani, Tschangiz, Hofmann, Wilfried
• Primary Examiner(s): Valentine, Donald R.
• Application Number:
  US09/463,896
• Time in Patent Office: 683 Days
• Field of Search: 205/655, 205/666, 205/656, 205/674
• US Class Current: 205/655
• CPC Class Codes: B01J 2219/182 horizontal
• CPC Class Codes: B01J 8/002 with a moving instrument
• CPC Class Codes: B01J 8/1872 Details of the fluidised bed reactor B01J8/1836 takes precedence
• CPC Class Codes: C25F 3/12 of semiconducting materials

Abstract

A method for producing a filter includes the steps of providing a blank of etchable semiconductor material having a first side and a second side and affixing a holding element to the blank. The holding element is chemically resistant to an etching solution. A current source is connected to the blank and at least one of the first and second sides of the blank is illuminated with light. The holding element and the blank are immersed in the etching solution until the first side of the blank is wetted so that the first side is etched electrochemically. The holding element is affixed to the blank such that contact areas between the holding element and the blank remain free of the etching solution.

Claims

1. A method for producing a filter comprising the steps of:

providing a blank of etchable semiconductor material having a first side and a second side,

affixing a holding element to said blank, the holding element being chemically resistant to an etching solution,

connecting said blank to a current source,

illuminating at least one of the first and second sides of said blank with light,

immersing the holding element and said blank in the etching solution until only the first side of said blank is wetted, the second side being uncovered and unwetted, so that the first side is etched electrochemically,

the holding element being affixed to said blank such that contact areas between the holding element and said blank remain free of the etching solution.

2. A method according to claim 1 wherein the holding element includes a shield having a light source located therein, the shield located on the second side opposite the first side of said blank.

3. A method according to claim 2 wherein the shield is coated with a light-reflecting coating.

4. A method according to claim 2 wherein the shield is circular-cylindrical.

5. A method according to claim 2 wherein the shield is formed as a paraboloid and wherein the light source is located in the focal point of the paraboloid.

6. A method according to claim 1 wherein the holding element includes a plurality of shields, each shield having a light source located therein and located on the second side opposite the first side of said blank.

7. A method according to claim 1 wherein said blank is a silicon plate, the method further comprising the step of doping said blank with a doping substance concentration in the range of 10¹⁵ to 10¹⁹ cm⁻

3.

8. A method according to claim 7 wherein the blank is n-doped and is connected with an anode of the current source.

9. A method according to claim 1 wherein the etching solution is hydrofluoric acid with a fluoride content in the range of 2-25%.

10. A method according to claim 1 wherein said blank is covered with a perforation mask having holes therein before the electrochemical etching and is etched chemically in an area of the holes of the perforation mask.

11. A method according to claim 1 wherein the light source is located outside a container filled with the etching solution, the container having a transparent wall, the light source being located so that the light penetrates the transparent wall and the etching solution and illuminates the first side of said blank.

12. A method for producing a filter comprising the steps of:

providing a plurality of blanks of etchable semiconductor material, each blank having a first side and a second side,

affixing a holding element to each blank, the holding element being chemically resistant to an etching solution,

connecting each blank to a current source,

illuminating at least one of the first and second sides of each blank with light,

simultaneously immersing each blank in the etching solution until only the first side of each blank is wetted, the second side of each blank being uncovered and unwetted, so that the first side is etched electrochemically,

the holding element being affixed to each blank such that contact areas between the holding element and each blank remain free of the etching solution.