Silicon carbide epitaxial layers grown on substrates offcut towards
First Claim
Patent Images
1. An epitaxial SiC film, grown on an offcut surface of a SiC substrate having a hexagonal structure, with the offcut surface having an offcut angle of from about 2 to about 10 degrees, and the crystallographic direction of the offcut surface being towards one of the six equivalent <
- 1{overscore (1)}00>
directions of the substrate ±
7.5 degrees, wherein said epitaxial SiC film comprises a device quality SiC film having a smooth surface morphology, within an edge exclusion area, and having a root mean square roughness not exceeding about 2 nanometers in a 20×
20 μ
m2 area.
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Abstract
A silicon carbide epitaxial film, grown on an offcut surface of a SiC crystalline substrate of hexagonal crystal form, having an offcut angle of from about 6 to about 10 degrees, toward the <1{overscore (1)}00> crystalline direction of the substrate. The resultant silicon carbide epitaxial film has superior morphological and material properties.
31 Citations
64 Claims
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1. An epitaxial SiC film, grown on an offcut surface of a SiC substrate having a hexagonal structure, with the offcut surface having an offcut angle of from about 2 to about 10 degrees, and the crystallographic direction of the offcut surface being towards one of the six equivalent <
- 1{overscore (1)}00>
directions of the substrate ±
7.5 degrees, wherein said epitaxial SiC film comprises a device quality SiC film having a smooth surface morphology, within an edge exclusion area, and having a root mean square roughness not exceeding about 2 nanometers in a 20×
20 μ
m2 area. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
- 1{overscore (1)}00>
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17. A silicon carbide article, comprising:
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a SiC substrate of hexagonal crystal form, with an offcut surface having an offcut angle of from about 2 to about 10 degrees, and the crystallographic direction of the offcut surface being towards one of the six equivalent <
1{overscore (1)}00>
directions of the substrate ±
7.5 degrees; and
an epitaxial SiC film, grown on the offcut surface, wherein said epitaxial SiC film comprises a device quality epitaxial SiC film having a smooth surface morphology, within an edge exclusion area, and having a root mean square roughness of not exceeding 2 nanometers in a 20×
20 μ
m2 area.- View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. A silicon carbide epitaxial material, grown on a (0001) 4H—
- SiC crystalline substrate offcut towards the <
1{overscore (1)}00>
crystalline direction of the substrate, wherein said silicon carbide epitaxial material has a smooth surface morphology, within an edge exclusion area, and having a root mean square roughness not exceeding about 2 naniometers in a 20×
20 μ
m2 area. - View Dependent Claims (33, 34, 35)
- SiC crystalline substrate offcut towards the <
-
36. A 4H—
- SiC epilayer film grown on a (0001) 4H—
SiC substrate offcut towards the <
1{overscore (1)}00>
crystalline direction of the substrate, wherein said epilayer film has a LEED (0{overscore (1)}) beam intensity profile as shown in FIG. 2.
- SiC epilayer film grown on a (0001) 4H—
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37. A 4H—
- SiC epilayers film grown on a (0001) 4H—
SiC substrate offcut towards the <
1{overscore (1)}00>
crystalline direction of the substrate, wherein said epilayers film has an average root mean square roughness less than 0.8 nanometers in a 20×
20 μ
m2 area.
- SiC epilayers film grown on a (0001) 4H—
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38. A silicon carbide article comprising a 4H—
- SiC epitaxial material on a (0001) 4H—
SiC single crystal substrate offcut towards the <
1{overscore (1)}00>
crystalline direction of the substrate, wherein said 4H—
SiC epitaxial material has a smooth surface morphology, within an edge exclusion area, and having a root mean square roughness not exceeding about 2 nanometers in a 20×
20 μ
m2 area. - View Dependent Claims (39, 40, 41)
- SiC epitaxial material on a (0001) 4H—
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42. A silicon carbide article comprising a 4H—
- SiC epilayer film growing on a (0001) 4H—
SiC substrate offcut towards the <
1{overscore (1)}00>
crystalline direction of the substrate, having a LEED (0{overscore (1)}) beam intensity profile as shown in FIG. 2.
- SiC epilayer film growing on a (0001) 4H—
-
43. A silicon carbide article comprising a 4H—
- SiC epilayers film grown on a (0001) 4H—
SiC substrate offcut towards the <
1{overscore (1)}00>
crystalline direction of the substrate, having an average root mean square roughness less than about 0.8 nanometers in a 20×
20 μ
m2 area.
- SiC epilayers film grown on a (0001) 4H—
-
44. A method of forming a device quality silicon carbide epitaxial film, comprising depositing said film at subatmospheric pressure conditions on a silicon carbide substrate of hexagonal crystal form, offcut towards the <
- 1{overscore (1)}00>
crystalline direction of the substrate, wherein said silicon carbide epitaxial film has a smooth surface morphology, within an edge exclusion area, and has a root mean square roughness not exceeding about 2 nanometers in a 20×
20 μ
m2 area. - View Dependent Claims (45, 46, 47, 48, 49, 50, 51, 52, 53)
- 1{overscore (1)}00>
-
54. A method of forming a device quality silicon carbide epitaxial film, comprising depositing said film at subatmospheric pressure conditions on a (0001) 4H—
- SiC crystalline substrate offcut towards the <
1{overscore (1)}00>
crystalline direction of the substrate, wherein said silicon carbide epitaxial film has a smooth surface morphology, within an edge exclusion area, and has a root mean square roughness not exceeding about 2 nanometers in a 20×
20 μ
m2 area. - View Dependent Claims (55, 56, 57, 58, 59, 60, 61, 62, 63)
- SiC crystalline substrate offcut towards the <
-
64. A method of forming a device quality silicon carbide epitaxial film, comprising growing said film on a (0001) 4H—
- SiC crystalline substrate offcut towards the <
1{overscore (1)}00>
crystalline direction of the substrate, wherein said growing step comprises;introducing, a carrier gas, a vaporized silicon-containing material and a vaporized carbon-containing material into a growth chamber at subatmosphieric pressure conditions; and
maintaining the carrier gas, silicon-containinig material and carbon-containing material flows and temperature condition for a time sufficient to grow a film of desired thickness, wherein said film has a smooth surface morphology, within an edge exclusion area, and has a root mean square roughness not exceeding about 2 nanometers in a 20×
20 μ
m2 area.
- SiC crystalline substrate offcut towards the <
Specification