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Method for fabricating a thin-film transistor

  • US 6,329,226 B1
  • Filed: 06/01/2000
  • Issued: 12/11/2001
  • Est. Priority Date: 06/01/2000
  • Status: Expired due to Term
First Claim
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1. A method for fabricating a thin-film transistor comprising:

  • preparing a gate electrode on a substrate;

    anodizing at least a portion of the gate electrode to form a gate dielectric compatible with an organic semiconductor;

    fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric; and

    depositing the organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode.

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