Method for fabricating a thin-film transistor

• US 6,329,226 B1
• Filed: 06/01/2000
• Issued: 12/11/2001
• Est. Priority Date: 06/01/2000
• Status: Expired due to Term

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: Agere Systems Guardian Corp. (Broadcom, Inc.)
• Inventors: Murphy, Donald W., Slusher, Richart E., Tate, Jennifer, Rogers, John A., Jones, Christopher D. W.
• Primary Examiner(s): Elms, Richard
• Assistant Examiner(s): Smith, Bradley
• Application Number:
  US09/585,159
• Time in Patent Office: 558 Days
• Field of Search: 438/142, 438/149, 438/151, 438/154
• US Class Current: 438/151
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02175 characterised by the metal H01L21/02197 takes precedence
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02181 the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/02183 the material containing tantalum, e.g. Ta2O5
• CPC Class Codes: H01L 21/02186 the material containing titanium, e.g. TiO2
• CPC Class Codes: H01L 21/02189 the material containing zirconium, e.g. ZrO2
• CPC Class Codes: H01L 21/02258 formation by anodic treatment, e.g. anodic oxidation
• CPC Class Codes: H01L 21/31687 by anodic oxidation
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 71/60 Forming conductive regions or layers, e.g. electrodes
• CPC Class Codes: H10K 71/621 Providing a shape to conductive layers, e.g. patterning or selective deposition
• CPC Class Codes: H10K 85/113 Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

Abstract

A method for fabricating a thin-film field effect transistor such as a thin-film field effect transistor. The method includes preparing a gate electrode on a substrate, anodizing at least a portion of the gate electrode to form a gate dielectric, and fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric. The method also includes depositing an organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode.

Claims

1. A method for fabricating a thin-film transistor comprising:

preparing a gate electrode on a substrate;

anodizing at least a portion of the gate electrode to form a gate dielectric compatible with an organic semiconductor;

fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric; and

depositing the organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode.

2. The method according to claim 1 wherein preparing the gate electrode on the substrate includes at least one of evaporating, sputter depositing, chemical vapor depositing and electrochemically growing a metal that can be anodized.

3. The method according to claim 1 wherein fabricating the electrically conducting source electrode and the drain electrode on the gate dielectric includes forming a film of metal on at least one of the gate dielectric and organic semiconductor and patterning the film.

6. The method according to claim 1 wherein the thin-film transistor is a thin-film field effect transistor.

4. A method for fabricating a thin-film transistor comprising:

preparing a gate electrode on a substrate;

anodizing at least a portion of the gate electrode to form a gate dielectric;

fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric; and

depositing an organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode, wherein

fabricating the electrically conducting source electrode and the drain electrode on the gate dielectric includes forming a film of metal on at least one of the gate dielectric and organic semiconductor and patterning the film, and

the forming of the film of metal on at least one of the gate dielectric and organic semiconductor is by a solution based deposition technique.

5. A method for fabricating a thin-film transistor comprising:

preparing a gate electrode on a substrate;

anodizing at least a portion of the gate electrode to form a gate dielectric;

fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric; and

depositing an organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode, wherein

fabricating the electrically conducting source electrode and the drain electrode on the gate dielectric includes forming a film of metal on at least one of the gate dielectric and organic semiconductor and patterning the film, and

the patterning of the film of metal is with microcontact printing.

7. A method for fabricating a thin-film transistor comprising:

preparing a gate electrode on a substrate;

anodizing at least a portion of the gate electrode to form a gate dielectric;

fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric; and

depositing an organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode, wherein

fabricating the electrically conducting source electrode and the drain electrode on the gate dielectric includes forming a film of metal on at least one of the gate dielectric and organic semiconductor and patterning the film,

the forming of the film of metal on at least one of the gate dielectric and organic semiconductor is by a solution based deposition technique, and

the solution based deposition is electroless deposition.

8. A method for fabricating a thin-film transistor comprising:

preparing a gate electrode on a substrate;

anodizing at least a portion of the gate electrode to form a gate dielectric;

fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric; and

depositing an organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode, wherein

fabricating the electrically conducting source electrode and the drain electrode on the gate dielectric includes forming a film of metal on at least one of the gate dielectric and organic semiconductor and patterning the film, and

the metal is silver.

9. A method for fabricating a thin-film transistor comprising:

preparing a gate electrode on a substrate;

anodizing at least a portion of the gate electrode to form a gate dielectric;

fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric; and

depositing an organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode, wherein

fabricating the electrically conducting source electrode and the drain electrode on the gate dielectric includes forming a film of metal on at least one of the gate dielectric and organic semiconductor and patterning the film,

the forming of the film of metal on at least one of the gate dielectric and organic semiconductor is by a solution based deposition technique, and

wherein the metal is silver.

10. A method for fabricating a thin-film field effect transistor comprising:

preparing a gate electrode on a substrate;

anodizing at least a portion of the gate electrode to form a gate dielectric compatible with an organic semiconductor;

depositing the organic semiconductor on at least a portion of the gate dielectric; and

fabricating an electrically conducting source electrode and a drain electrode on the organic semiconductor.