Method for fabricating a thin-film transistor
First Claim
Patent Images
1. A method for fabricating a thin-film transistor comprising:
- preparing a gate electrode on a substrate;
anodizing at least a portion of the gate electrode to form a gate dielectric compatible with an organic semiconductor;
fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric; and
depositing the organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode.
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Abstract
A method for fabricating a thin-film field effect transistor such as a thin-film field effect transistor. The method includes preparing a gate electrode on a substrate, anodizing at least a portion of the gate electrode to form a gate dielectric, and fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric. The method also includes depositing an organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode.
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Citations
10 Claims
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1. A method for fabricating a thin-film transistor comprising:
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preparing a gate electrode on a substrate;
anodizing at least a portion of the gate electrode to form a gate dielectric compatible with an organic semiconductor;
fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric; and
depositing the organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode. - View Dependent Claims (2, 3, 6)
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4. A method for fabricating a thin-film transistor comprising:
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preparing a gate electrode on a substrate;
anodizing at least a portion of the gate electrode to form a gate dielectric;
fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric; and
depositing an organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode, wherein fabricating the electrically conducting source electrode and the drain electrode on the gate dielectric includes forming a film of metal on at least one of the gate dielectric and organic semiconductor and patterning the film, and the forming of the film of metal on at least one of the gate dielectric and organic semiconductor is by a solution based deposition technique.
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5. A method for fabricating a thin-film transistor comprising:
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preparing a gate electrode on a substrate;
anodizing at least a portion of the gate electrode to form a gate dielectric;
fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric; and
depositing an organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode, wherein fabricating the electrically conducting source electrode and the drain electrode on the gate dielectric includes forming a film of metal on at least one of the gate dielectric and organic semiconductor and patterning the film, and the patterning of the film of metal is with microcontact printing.
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7. A method for fabricating a thin-film transistor comprising:
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preparing a gate electrode on a substrate;
anodizing at least a portion of the gate electrode to form a gate dielectric;
fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric; and
depositing an organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode, wherein fabricating the electrically conducting source electrode and the drain electrode on the gate dielectric includes forming a film of metal on at least one of the gate dielectric and organic semiconductor and patterning the film, the forming of the film of metal on at least one of the gate dielectric and organic semiconductor is by a solution based deposition technique, and the solution based deposition is electroless deposition.
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8. A method for fabricating a thin-film transistor comprising:
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preparing a gate electrode on a substrate;
anodizing at least a portion of the gate electrode to form a gate dielectric;
fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric; and
depositing an organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode, wherein fabricating the electrically conducting source electrode and the drain electrode on the gate dielectric includes forming a film of metal on at least one of the gate dielectric and organic semiconductor and patterning the film, and the metal is silver.
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9. A method for fabricating a thin-film transistor comprising:
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preparing a gate electrode on a substrate;
anodizing at least a portion of the gate electrode to form a gate dielectric;
fabricating an electrically conducting source electrode and a drain electrode on the gate dielectric; and
depositing an organic semiconductor on at least a portion of the gate dielectric, the source electrode and the drain electrode, wherein fabricating the electrically conducting source electrode and the drain electrode on the gate dielectric includes forming a film of metal on at least one of the gate dielectric and organic semiconductor and patterning the film, the forming of the film of metal on at least one of the gate dielectric and organic semiconductor is by a solution based deposition technique, and wherein the metal is silver.
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10. A method for fabricating a thin-film field effect transistor comprising:
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preparing a gate electrode on a substrate;
anodizing at least a portion of the gate electrode to form a gate dielectric compatible with an organic semiconductor;
depositing the organic semiconductor on at least a portion of the gate dielectric; and
fabricating an electrically conducting source electrode and a drain electrode on the organic semiconductor.
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Specification