RF power amplifier output power sensor

• US 6,329,809 B1
• Filed: 01/27/2000
• Issued: 12/11/2001
• Est. Priority Date: 08/27/1999
• Status: Expired due to Term

• Current Assignee: Qorvo US, Inc. (Qorvo, Inc.)
• Original Assignee: RF Micro Devices Incorporated (Qorvo, Inc.)
• Inventors: Dening, David C., Augustine, Paul J.
• Primary Examiner(s): Nguyen, Vinh P.
• Application Number:
  US09/492,488
• Time in Patent Office: 684 Days
• Field of Search: 324/95, 324/158.1, 324/119, 343/703, 330/279, 330/130, 330/138, 330/280, 455/126, 455/115
• US Class Current: 324/95
• CPC Class Codes: G01R 21/00 Arrangements for measuring electric power or power factor G01R7/12 takes precedence
• CPC Class Codes: H03F 2200/504 the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier

Abstract

A system for sensing RF amplifier output power includes an amplifier transistor and two sampling transistors. The two sampling transistors are physically smaller than the amplifier transistor, and are preferably the same size. The first sampling transistor is configured to sample the same RF input signal that is amplified by the amplifier transistor. The second sampling transistor is configured to receive and amplify only a bias network signal. The bias network associated with the transistors includes a selection of components based upon operating parameters as well as actual physical sizes of the transistors. The selection of component values in association with transistor sizes is used to enable generation of a current sensing signal that is proportional to the power level of the RF output signal generated by the amplifier transistor. The RF sensing signal is corrected for bias current effects and bias shifts by subtracting the sampled bias current amplified by the second sampling transistor from the RF current sensing signal.

Claims

1. Amplifier circuitry comprising:

a) a radio frequency power amplifier for amplifying a radio frequency input signal and having;

i) a radio frequency amplifier input for receiving the radio frequency input signal,

ii) a bias input for receiving a bias signal for biasing the radio frequency power amplifier, and

iii) a power amplifier output providing an amplified radio frequency signal;

b) a first transistor circuit having;

i) a first input for receiving the radio frequency input signal,

ii) a first bias input for receiving the bias signal, and

iii) a first output providing a first output signal having a bias component and a radio frequency component proportionally smaller than the amplified radio frequency signal; and

c) a second transistor circuit having;

i) a second bias input for receiving the bias signal, and

ii) a second output for providing second output signal corresponding to the bias component.

2. The amplifier circuitry of claim 1 further comprising bias circuitry adapted to provide the bias signal as a function of the first and second outputs.

3. The amplifier circuitry of claim 2 wherein the bias circuitry provides the bias signal to compensate for output power of the amplified radio frequency signal.

4. The amplifier circuitry of claim 1 further comprising power sensing circuitry including a subtraction circuitry adapted to subtract the second output signal from the first output signal to provide a signal proportional to output power of the amplified radio frequency signal.

5. The amplifier circuitry of claim 1 wherein the first and second transistor circuits consist essentially of transistors providing substantially similar current gains.

6. The amplifier circuitry of claim 5 wherein the transistors of the first and second circuits are substantially the same size.

7. The amplifier circuitry of claim 5 wherein the current gain of the first and second transistor circuits are substantially smaller then a current gain for the power amplifier circuitry.

8. The amplifier circuitry of claim 5 wherein the power amplifier circuitry is implemented using transistor circuitry.

9. The amplifier circuitry of claim 8 wherein the first and second transistor circuits are substantially the same size and proportionally smaller than the power amplifier circuitry.

10. Amplifier circuitry comprising:

a) a radio frequency power amplifier for amplifying a radio frequency input signal and having;

i) a radio frequency amplifier input for receiving the radio frequency input signal,

ii) a bias input for receiving a bias signal for biasing the radio frequency power amplifier, and

iii) a power amplifier output providing an amplified radio frequency signal;

b) a first transistor circuit having;

i) a first input for receiving the radio frequency input signal,

ii) a first bias input for receiving the bias signal, and

iii) a first output providing a first output signal having a bias component and a radio frequency component proportionally smaller than the amplified radio frequency signal; and

c) bias circuitry adapted to provide the bias signal as a function of the first output, wherein the bias circuitry provides the bias signal to compensate for output power of the amplified radio frequency signal.

11. The amplifier circuitry of claim 10 further comprising a second transistor circuit having:

a) a second bias input for receiving the bias signal, and

b) a second output for providing second output signal corresponding to the bias signal, wherein the bias circuitry is adapted to provide the bias signal as a function of the second output such that the bias signal compensates for output power of the amplified radio frequency signal.

12. The amplifier circuitry of claim 10 further comprising power sensing circuitry including a subtraction circuitry adapted to subtract the second output signal from the first output signal to provide a signal proportional to output power of the amplified radio frequency signal.

13. The amplifier circuitry of claim 10 wherein the first and second transistor circuits consist essentially of transistor s providing substantially similar current gains.

14. The amplifier circuitry of claim 13 wherein the transistors of the first and second circuits are substantially the same size.

15. The amplifier circuitry of claim 13 wherein the current gain of the first and second transistor circuits are substantially smaller then a current gain for the power amplifier circuitry.

16. The amplifier circuitry of claim 13 wherein the power amplifier circuitry is implemented using transistor circuitry.

17. The amplifier circuitry of claim 16 wherein the first and second transistor circuits are substantially the same size and proportionally smaller than the power amplifier circuitry.