Electronic sensor apparatus

• US 6,329,817 B1
• Filed: 08/30/1999
• Issued: 12/11/2001
• Est. Priority Date: 08/31/1998
• Status: Expired due to Term

• Current Assignee: Group 3 Technology Limited (Berry Global Group Inc.)
• Original Assignee: Group 3 Technology Limited (Berry Global Group Inc.)
• Inventors: Laws, Matthew Edwin, Moginine Gummer, Robert Hugh, McGill, Brett Gordon
• Primary Examiner(s): Snow, Walter E.
• Application Number:
  US09/385,741
• Time in Patent Office: 834 Days
• Field of Search: 324/225, 324/202, 324/207.12, 324/207.2, 324/251, 702/104, 702/85, 702/86, 330/32.H, 327/510, 327/511
• US Class Current: 324/251
• CPC Class Codes: G01D 3/022 having an ideal characteristic, map or correction data stored in a digital memory
• CPC Class Codes: G01R 15/202 using Hall-effect devices Hall elements in arrangements for measuring electrical power G01R21/08
• CPC Class Codes: G01R 33/07 Hall effect devices

Abstract

A sensor for measuring a parameter includes at least one transducer adapted to provide an analog transducer signal, and at least one converter adapted to convert the analog transducer signal into a digitized transducer signal, and a memory device associated with the converter capable of receiving the digitized transducer signal directly from the converter. The memory device is configured to provide a digitized output value from a memory location, the memory location being associated with or corresponding to the digitized transducer signal received by the memory device.

Claims

1. A sensor comprising:

one or more transducers adapted to provide a first analog transducer signal and a second analog transducer signal,

at least two converters, with a first converter being adapted to convert said first analog transducer signal to a first digital transducer signal, and a second converter adapted to convert said second analog transducer signal to a second digital transducer signal,

a memory device associated with said converters capable of receiving said first and second digital transducer signals directly from said converters, and

said memory device being configured to provide a digital output value from a memory location, said memory location being associated with or corresponding to both the first digital transducer signal and the second digital transducer signal received by the memory device.

2. The sensor as claimed in claim 1 wherein a single transducer provides both the first analog transducer signal and the second analog transducer signal.

3. The sensor as claimed in claim 1 wherein each analog transducer signal varies dependent on both the measured parameter and at least one environmental condition.

4. The sensor as claimed in claim 1 wherein the sensor includes a Hall effect transistor.

5. The sensor as claimed in claim 4 wherein the first analog transducer signal comprises a Hall voltage and the second analog transducer signal comprises a resistive voltage.

6. The sensor as claimed in claim 1 wherein the converter is an analog to digital converter.

7. The sensor as claimed in claim 1, wherein the first analog transducer signal is digitized and supplied as an input to the memory device, and the second analog transducer signal is digitized and supplied as a second input to the memory device.

8. The sensor as claimed in claim 1 wherein the memory device comprises a two dimensional look-up table with a number of rows and columns.

9. The sensor as claimed in claim 1 wherein the memory device is an erasable programmable read only memory.

10. The sensor as claimed in claim 1 wherein the memory device location value is calculated to correct the effect of non-linearities in the analog transducer signal.

11. The sensor as claimed in claim 1 wherein the memory device location values are calculated to correct the effect of at least one environmental condition on an analog transducer signal.

12. The sensor as claimed in claim 1 wherein the memory device locations are calculated to correct both non-linearities in an analog transducer signal and the effect of at least one environmental condition on said analog transducer signal.

13. The sensor as claimed in claim 1 wherein the value stored in each memory device location is calculated prior to use of the sensor.

14. The sensor as claimed in claim 1 wherein the sensor further comprises a digital to analog converter associated with the output of the memory device, said digital to analog converter being adapted to convert said digital output value into an analog output value.

15. The sensor as claimed in claim 14 wherein the sensor further comprises a summation device adapted to receive said analog output value from the digital to analog converter and to add the analog output value to an analog transducer signal.

16. The sensor as claimed in claim 15 wherein the analog output of the summation device corrects for non-linearities and/or environmental conditions in an analog transducer signal.

17. A method of operating a sensor comprising the steps of,

a) providing a first analog transducer signal to a first converter from a transducer,

b) providing a second analog transducer signal to a second converter,

c) converting said first analog transducer signal to a first digital transducer signal,

d) converting said second analog transducer signal to a second digital transducer signal,

e) supplying said first and second digital transducer signals directly to two separate inputs of a memory device,

f) matching a memory location in the memory device to both said first digital transducer signal and said second digital transducer signal, and

g) transmitting a digital output value stored within said matched memory location.

18. The method of operating a sensor as claimed in claim 17 further comprising the additional subsequent step of supplying said analog output value to a summation device to add the analog value to an analog transducer signal.