Liquid crystal display device and method of fabrication TFT panel

• US 6,330,043 B1
• Filed: 04/19/2000
• Issued: 12/11/2001
• Est. Priority Date: 04/20/1999
• Status: Expired due to Term

• Current Assignee: Vista Peak Ventures LLC (Dominion Harbor Enterprises, LLC)
• Original Assignee: NEC Corporation
• Inventors: Watanabe, Takahiko, Kikkawa, Hironori, Sakamoto, Michiaki, Yamamoto, Yuji, Okamoto, Mamoru, Nakata, Shinichi, Ihara, Hirofumi
• Primary Examiner(s): Dudek, James A.
• Application Number:
  US09/552,035
• Time in Patent Office: 601 Days
• Field of Search: 349/106, 349/43, 349/138
• US Class Current: 349/43
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer

Abstract

An LCD including a pair of transparent dielectric substrates, liquid crystal sandwiched between the transparent dielectric substrates; a TFT formed overlying the first transparent dielectric substrate, a first dielectric film made of non-photosensitive resin and a second dielectric film made of photosensitive resin which cover the inner side surface of a through-hole formed in the first and the second dielectric films. The yield and the reliability of the LCD are elevated because of the smooth shape of the second dielectric film.

Claims

1. A liquid crystal display (LCD) device comprising:

first and second transparent panels; and

liquid crystal sandwiched between said first transparent panel and said second transparent panel,

said first transparent panel including a dielectric substrate, a plurality of pixel elements arranged in a matrix overlying said dielectric substrate, each of said pixel elements having a TFT, an associated pixel electrode, and first and second dielectric films covering said TFT and having a through-hole for said TFT, a plurality of scan lines each connected to gates of said TFTs in a corresponding row of said pixel elements, a plurality of signal lines each connected to source electrodes in a corresponding column of said pixel elements, and drain electrodes connected to the pixel electrode via said through-holes, said first dielectric film being made of non-photosensitive resin, said second dielectric film being made of photosensitive resin and covering an inner side wall of each said through-hole.

2. The LCD device as defined in claim 1, wherein said first dielectric film is a color filter and said second dielectric film is a transparent overcoat.

3. The LCD device as defined in claim 1, wherein both said first and second dielectric films are interlayer films made of transparent resin.

4. The LCD device as defined in claim 1, wherein said first and second dielectric films have a total thickness of 3 μ

m or more.

5. A method for fabricating a TFT panel for use in an LCD device, comprising the steps of:

forming a TFT overlying a first transparent dielectric substrate;

forming a non-photosensitive first dielectric film overlying the TFT;

forming a photosensitive second dielectric film on the first dielectric film;

exposing the second dielectric film to light by using a photomask to form a wafer;

dipping the wafer in an alkaline developer for development;

exposing the wafer for exposure;

heating the second dielectric film at a temperature higher than a glass transition point of the second dielectric film; and

forming a pixel electrode overlying the second dielectric film.

6. The method for fabricating the TFT panel as defined in claim 5, wherein the TFT forming step includes the steps of:

forming a metal film on the first transparent dielectric substrate by photolithographic patterning;

forming scan lines, gate electrodes and common electrodes;

forming a silicon nitride film acting as a gate dielectric film on an entire surface of the common electrode;

forming and patterning a semiconductor layer by consecutively forming a non-doped amorphous silicon film and a doped amorphous silicon film overlying the gate dielectric film; and

forming a passivation layer by forming and patterning a silicon nitride layer.

7. The method for fabricating the TFT panel as defined in claim 5, wherein the first dielectric film forming step includes the steps of:

applying non-photosensitive resin to form the first dielectric film having a specified thickness; and

forming a color filter in a semi-cured state by heating the non-photosensitive resin; and

the second dielectric film forming step includes the steps of;

applying photosensitive and transparent resin on the color filter; and

forming an overcoat by heating the photosensitive and transparent resin.

8. The method for fabricating the TFT panel as defined in claim 7, wherein a temperature of heating the photosensitive and transparent resin is lower than that of heating the non-photosensitive resin.

9. The method for fabricating the TFT panel as defined in claim 5, wherein after the second dielectric film is heated, the second dielectric film and underlying layers below the second dielectric film are etched in the second dielectric film heating step.

10. The method for fabricating the TFT panel as defined in claim 5, wherein the first dielectric film forming step includes the steps of:

forming a first interlayer dielectric film made of non-photosensitive transparent resin; and

forming a second interlayer dielectric film made of photosensitive transparent resin on the first interlayer dielectric film.

11. The method for fabricating the TFT panel as defined in claim 10, wherein after the second interlayer dielectric film is formed, the second interlayer dielectric film and underlying layers below the second interlayer dielectric film are etched.

12. The method for fabricating the TFT panel as defined in claim 9 further comprising a step of forming a passivation layer by forming and patterning a silicon nitride layer and etching the passivation layer.

13. The method for fabricating the TFT panel as defined in claim 11 further comprising a step of forming a passivation layer by forming and patterning a silicon nitride layer and etching the passivation layer.