Method to improve adhesion between an overlying oxide hard mask and an underlying low dielectric constant material
First Claim
1. A method of fabricating a metal interconnect structure, on a semiconductor substrate, using a silicon oxide, damascene mask pattern, formed on underlying thick low K—
- insulator, composite layer, and featuring a UV treatment performed on said thick low K layer, prior to deposition of the said silicon oxide layer, used for the damascene mask pattern, with said UV treatment used to improve the adhesion between said silicon oxide layer, and said thick low K layer, comprising the steps of;
forming said thick low K layer, and an underlying insulator layer, on an underlying, first metal interconnect structure;
forming a via hole in said thick low K layer, and in said underlying insulator layer, exposing a portion of the top surface, of said first metal interconnect structure;
forming a metal plug structure, in said via hole;
performing said treatment, comprised of UV exposure of the top surface of said thick low k layer, creating a roughened top surface for said thick low K layer;
depositing a second insulator layer, on said roughened top surface of said thick low K layer;
depositing a silicon oxide layer on said second insulator layer;
using a photoresist shape, with a first opening, as a mask, to form said silicon oxide, damascene mask pattern, via removal of regions of said silicon oxide layer, exposed in said first opening in said photoresist shape, and with a second opening, in said silicon oxide, damascene mask pattern, exposing a portion of the top surface of said second insulator layer;
removing said portion, of said second insulator layer, exposed in said second opening, in said silicon oxide, damascene mask pattern, exposing the top surface of said metal plug structure;
removing said photoresist shape, from the top surface of said silicon oxide, damascene mask pattern; and
forming a second metal interconnect structure, in said second opening, in said silicon oxide, damascene mask pattern.
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Accused Products
Abstract
A method for improving the adhesion, between an overlying insulator layer, and an underlying low K layer, used for forming a composite layer, damascene mask pattern, wherein the damascene mask pattern is used as an interlevel dielectric layer, between metal interconnect structures, has been developed. A treatment, comprised of aqueous NH4OH solutions, or of UV curing procedures, is performed on the top surface of the low K layer, prior to deposition of the overlying insulator layer. The treatment, resulting in a roughened top surface of the low K layer, allows removal of masking photoresist shapes, to be aggressively accomplished using wet strippers, without adhesion loss at the insulator—low K layer interface.
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Citations
6 Claims
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1. A method of fabricating a metal interconnect structure, on a semiconductor substrate, using a silicon oxide, damascene mask pattern, formed on underlying thick low K—
- insulator, composite layer, and featuring a UV treatment performed on said thick low K layer, prior to deposition of the said silicon oxide layer, used for the damascene mask pattern, with said UV treatment used to improve the adhesion between said silicon oxide layer, and said thick low K layer, comprising the steps of;
forming said thick low K layer, and an underlying insulator layer, on an underlying, first metal interconnect structure;
forming a via hole in said thick low K layer, and in said underlying insulator layer, exposing a portion of the top surface, of said first metal interconnect structure;
forming a metal plug structure, in said via hole;
performing said treatment, comprised of UV exposure of the top surface of said thick low k layer, creating a roughened top surface for said thick low K layer;
depositing a second insulator layer, on said roughened top surface of said thick low K layer;
depositing a silicon oxide layer on said second insulator layer;
using a photoresist shape, with a first opening, as a mask, to form said silicon oxide, damascene mask pattern, via removal of regions of said silicon oxide layer, exposed in said first opening in said photoresist shape, and with a second opening, in said silicon oxide, damascene mask pattern, exposing a portion of the top surface of said second insulator layer;
removing said portion, of said second insulator layer, exposed in said second opening, in said silicon oxide, damascene mask pattern, exposing the top surface of said metal plug structure;
removing said photoresist shape, from the top surface of said silicon oxide, damascene mask pattern; and
forming a second metal interconnect structure, in said second opening, in said silicon oxide, damascene mask pattern. - View Dependent Claims (2, 3, 4, 5, 6)
- insulator, composite layer, and featuring a UV treatment performed on said thick low K layer, prior to deposition of the said silicon oxide layer, used for the damascene mask pattern, with said UV treatment used to improve the adhesion between said silicon oxide layer, and said thick low K layer, comprising the steps of;
Specification