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Reduction of blistering and delamination of high-temperature devices with metal film

  • US 6,331,678 B1
  • Filed: 10/29/1999
  • Issued: 12/18/2001
  • Est. Priority Date: 10/29/1999
  • Status: Expired due to Fees
First Claim
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1. A device, comprising a multi-layered electronic micro-component that comprises:

  • (a) a dielectric layer on a substrate, the dielectric layer having a dielectric layer thermal expansion coefficient; and

    (b) a micro-mesh of a first electrical conductor secured to the dielectric layer, the first electrical conductor having a thermal expansion coefficient different from the dielectric layer thermal expansion coefficient, wherein the device is operable at a temperature of at least 250°

    C. without the first electrical conductor delaminating or blistering from the dielectric layer.

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