Semiconductor device and manufacturing method thereof

• US 6,333,212 B1
• Filed: 11/08/2000
• Issued: 12/25/2001
• Est. Priority Date: 08/25/1995
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation), Toshiba Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Takahashi, Takuya, Ohmori, Jun, Jin, Takanori, Fukuda, Masatoshi, Iwasaki, Hiroshi
• Primary Examiner(s): Picardat, Kevin M.
• Application Number:
  US09/707,850
• Time in Patent Office: 412 Days
• Field of Search: 438/111, 438/112, 438/121, 438/122, 438/123, 438/124, 438/125, 438/126, 438/127
• US Class Current: 438/127
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/49531 the additional leads being a wiring board
• CPC Class Codes: H01L 23/49838 Geometry or layout
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/15153 the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15165 Monolayer substrate
• CPC Class Codes: H01L 2924/15787 Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/1579 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

A semiconductor device with a thickness of 1 mm or less is disclosed, that comprises a frame plate main body with a thickness in the range from 0.1 mm to 0.25 mm, a semiconductor pellet disposed on a first surface of the frame plate main body and with a thickness in the range from 0.2 mm to 0.3 mm, an external connection lead, one end thereof being connected to a peripheral portion of the first surface of the frame plate main body, the other end thereof extending to the outside of the frame plate main body, a bonding wire for electrically connecting an electrode of the semiconductor pellet and a connection portion of the end of the external connection lead, and a sealing resin layer for covering and sealing at least a region including the semiconductor pellet, the bonding wire, and a connection portion.

Claims

1. A manufacturing method of a semiconductor device with a thickness of 1 mm or less, comprising the steps of:

(a) connecting a peripheral portion of a first surface of a frame plate main body with a thickness in the range from 0.1 mm to 0.25 mm and an external connection lead in such a manner that the external connection lead extends to the outside of the frame plate main body;

(b) mounting a semiconductor pellet with a thickness in the range from 0.2 mm to 0.3 mm to the first surface of the frame plate main body;

(c) electrically connecting an electrode of the semiconductor pellet and a connection portion at the end of a corresponding external connection lead with a bonding wire; and

(d) mounting the resultant module of the step (c) to a transfer mold type die and pressure-fitting a sealing resin so as to transfer-mold and resin-seal at least a region including the semiconductor pellet, the bonding wire, and a connection portion.

2. The manufacturing method as set forth in claim 1, further comprising the step of mounting the semiconductor pellet in such a manner that the difference between the upper surface of the external connection lead and the upper surface of the semiconductor pellet and/or the difference between the lower surface of the external connection lead and the lower surface of the frame plate is 0.2 mm or less.

3. A manufacturing method of a semiconductor device with a thickness of 1 mm or less, comprising the steps of:

(a) forming a recess portion on a first main surface of a frame plate main body and a wiring pattern including a connection pad to a peripheral portion of the first main surface, the thickness of the frame plate main body being in the range from 0.3 mm to 0.5 mm, the depth of the recess portion being in the range from 0.2 mm to 0.3 mm, the recess portion being adapted for mounting the semiconductor pellet;

(b) electrically connecting an electrode of the semiconductor pellet and a corresponding connection pad with a bonding wire;

(c) forming a flat type external connection terminal on a second main surface of the frame plate main body, the wiring pattern on the first main surface being connected to the second main surface via a through-hole; and

(d) mounting the resultant module of the step (c) to a transfer mold type die and pressure-fitting a sealing resin so as to transfer-mold and resin-seal at least a region including the semiconductor pellet, the bonding wire, and a connection portion.

4. The manufacturing method as set forth in claim 3, wherein the difference between the upper surface of the frame plate and the upper surface of the semiconductor pellet is 0.2 mm or less.

5. The manufacturing method as set forth in claim 3, wherein the plane area of the semiconductor pellet is at least 40 mm².