Plasma treatment system and method

• US 6,333,269 B2
• Filed: 09/14/1998
• Issued: 12/25/2001
• Est. Priority Date: 09/16/1997
• Status: Expired due to Fees

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Amano, Hideaki, Naito, Yoko
• Primary Examiner(s): Hiteshew, Felisa
• Assistant Examiner(s): Tran, Binh X.
• Application Number:
  US09/153,141
• Publication Number:
  US 20010008798A1
• Time in Patent Office: 1,198 Days
• Field of Search: 438/706, 438/710, 438/726, 438/728, 438/732, 438/734, 438/743
• US Class Current: 438/706
• CPC Class Codes: C23C 16/511 using microwave discharges
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32678 Electron cyclotron resonance
• CPC Class Codes: H01L 21/02131 the material being halogen doped silicon oxides, e.g. FSG
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 21/31629 Deposition of halogen doped silicon oxide, e.g. fluorine doped silicon oxide

Abstract

It is an object to enhance the degree of freedom for the shape of an obtained magnetic field to enhance the inplane uniformity of thickness of first and second films when the first and second films are continuously formed on a substrate to be treated. A main electromagnetic coil 5 is provided outside of a plasma chamber 21 so as to be movable vertically by a lifting shaft 52. When plasma is produced in a vacuum vessel 2 by the electron cyclotron resonance between a microwave and a magnetic field to continuously deposit a film of a two-layer structure, which comprises an SiOF film and an SiO₂ film, on a wafer W with the produced plasma, a process for forming the SiOF film is carried out while the main electromagnetic coil 5 is arranged so that the lower surface of the coil 5 is positioned at a lower position than the lower surface of a transmission window 23 by 139 mm, and a process for forming the SiO₂ film is carried out while the main electromagnetic coil 5 is arranged so that the lower surface of the coil 5 is positioned at a lower position than the lower surface of the transmission 23 by 157 mm.

Claims

1. A plasma treatment method for supplying a microwave into a vacuum vessel by high-frequency producing means and for forming a magnetic field in said vacuum vessel by magnetic field forming means, to produce plasma in said vacuum vessel by the electron cyclotron resonance between said microwave and said magnetic field to treat a substrate with the produced plasma, said plasma treatment method comprising:

a first step of introducing said substrate into said vacuum vessel and producing plasma to preheat said substrate before forming a thin film on said substrate; and

a second step of activating a thin film deposition gas to produce plasma in said vacuum vessel and forming said thin film on said substrate with the produced plasma,

wherein the position of said magnetic field forming means is changed between positions in said first and second steps to change the shape of said magnetic field so that magnetic lines of force of said field converge on a central portion of said substrate during said first step to a greater extent than during said second step, and lines of force of said field are substantially more uniform over the plane of said substrate during said second step than during said first step.

2. A plasma treatment method for supplying a microwave into a vacuum vessel by high-frequency producing means and for forming a magnetic field in said vacuum vessel by magnetic field forming means, to produce plasma in said vacuum vessel by the electron cyclotron resonance between said microwave and said magnetic field to treat a substrate with the produced plasma, said plasma treatment method comprising:

a first step of introducing said substrate into said vacuum vessel and producing plasma to preheat said substrate before forming a thin film on said substrate; and

a second step of activating a thin film deposition gas to produce plasma in said vacuum vessel to form a thin film on said substrate with the produced plasma,

wherein the current flowing through an electromagnetic coil of said magnetic field forming means is changed between currents in said first and second steps to change the shape of said magnetic field so that magnetic lines of force of said field converge on a central portion of said substrate during said first step to a greater extent than during said second step, and lines of force of said field are substantially more uniform over the plane of said substrate during said second step than during said first step.