Chemical mechanical polishing in-situ end point system

• US 6,334,807 B1
• Filed: 04/30/1999
• Issued: 01/01/2002
• Est. Priority Date: 04/30/1999
• Status: Active Grant

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Smith, Paul H. Jr., Nadeau, Rock, OʼBoyle, Martin P., Wickramasinghe, Hemantha K., van Kessel, Theodore G., Lebel, Richard J.
• Primary Examiner(s): Eley, Timothy V.
• Assistant Examiner(s): BERRY JR, WILLIE WENDELL
• Application Number:
  US09/302,737
• Time in Patent Office: 977 Days
• Field of Search: 451/5, 451/6, 451/9, 451/159
• US Class Current: 451/6
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: B24B 49/04 involving measurement of the workpiece at the place of grinding during grinding operation
• CPC Class Codes: B24B 49/12 involving optical means

Abstract

A structure and method for polishing a device include oscillating a carrier over an abrasive surface (the carrier bringing a polished surface of the device into contact with the abrasive surface, the oscillating allowing a portion of the polished surface to periodically oscillate off the abrasive surface), optically determining a reflective measure of a plurality of locations of the polished surface as the portion of the device oscillates off the abrasive surface and calculating depths of the locations of the polished surface based of the reflective measure.

Claims

1. A method of monitoring the polishing of thin films comprising:

periodically monitoring a reflected optical spectrum from random locations of a polished face of a workpiece to produce monitored data,

recording said monitored data;

analyzing said monitored data to determine differences between separate monitored data points of said monitored data; and

stopping said polishing when a depth of one of said monitored data points is below a predetermined criterion.

2. The method in claim 1, wherein said predetermined criterion comprises a depth of one of said thin films.

3. The method in claim 1, wherein said monitoring is performed while said workpiece is being polished.

4. The method in claim 1, further comprising calculating a rate of material removal based on said monitored data.

5. The method in claim 1, further comprising calculating a change of material layers based on a change in said monitored data.

6. The method in claim 1, further comprising calculating a thickness of one of said thin films based on said monitored data.

7. The method in claim 1, wherein said periodically monitoring comprises optically measuring reflected light from said polished face as said workpiece oscillates off a polishing surface.

8. The method in claim 1, further comprising rinsing said polished face as said workpiece oscillates off said polishing surface.

9. The method in claim 1, wherein said analyzing said monitored data includes determining which of said monitored data points has a smallest depth representing a smallest thickness point of one of said thin films on said polished surface.

10. A method of polishing a device comprising:

oscillating a carrier over an abrasive surface, said carrier bringing a polished surface of said device into contact with said abrasive surface, said oscillating allowing a portion of said polished surface to periodically oscillate off said abrasive surface;

optically determining a reflective measure of a plurality of random locations of said polished surface as said portion of said device oscillates off said abrasive surface;

calculating depths of said locations of said polished surface based on said reflective measure, wherein said optically determining includes supplying a light source and said calculating includes removing a pattern of said light source from said reflective measure; and

stopping said polishing when a depth of one of said locations is below a predetermined criterion.

11. The method as in claim 10, further comprising calculating a rate of material removal based on said depths of said locations of said polished surface.

12. The method in claim 10, further comprising calculating a change of material composition of said polished surface based on a change in said reflective measure.

13. The method in claim 10, further comprising calculating a thickness of a layer of said polished surface based on said depths of said locations of said polished surface.

14. The method in claim 10, further comprising rinsing said polished surface as said carrier oscillates off said abrasive surface.

15. The method in claim 10, wherein said calculating of said depths includes determining a smallest depth of said depths.

16. An apparatus for polishing a device having a polished surface, said apparatus comprising:

an abrasive surface;

a carrier bringing said polished surface into contact with said abrasive surface, said carrier oscillating such that portions of said polished surface periodically oscillate off said abrasive surface;

an optical probe for determining a reflective measure of a plurality of random locations of said polished surface as said portions of said polished surface oscillate off said abrasive surface; and

a computer for calculating a depth of said polished surface based on said reflective measure,

wherein said computer stops said polishing when a depth of one of said locations is below a predetermined criterion.

17. The apparatus as in claim 16, wherein said computer calculates a rate of material removal based on said depth of said polished surface.

18. The apparatus in claim 16, wherein said computer calculates a change of material composition of said polished surface based on a change in said reflective measure.

19. The apparatus in claim 16, wherein said computer calculates a thickness of a layer of said polished surface based on said depth of said polished surface.

20. The apparatus in claim 16, further comprising a water jacket incorporated adjacent said optical probe for rinsing said polished surface as said carrier oscillates off said abrasive surface.

21. The apparatus in claim 16, wherein said computer determines a smallest depth of said polished surface.

22. An apparatus for polishing a device comprising:

means for polishing a polished surface of said device against an abrasive surface, said polishing means allowing a portion of said polished surface to periodically oscillate off said abrasive surface;

means for optically determining a reflective measure of a plurality of random locations of said polished surface as said portion of said polished surface oscillates off said abrasive surface;

means for calculating a depth of said locations of said polished surface based of said reflective measure; and

means for stopping said polishing when a depth of one of said locations is below a predetermined criterion.

23. The apparatus as in claim 22, wherein said calculating means calculates a rate of material removal based on said depth of said polished surface.

24. The apparatus in claim 22, wherein said calculating means calculates a change of material composition of said polished surface based on a change in said reflective measure.

25. The apparatus in claim 22, wherein said calculating means calculates a thickness of a layer of said polished surface based on s aid depth of said polished surface.

26. The apparatus in claim 22, further comprising means for rinsing said polished surface as said polished surface oscillates off said abrasive surface.

27. The apparatus in claim 22, wherein said calculating means determines a smallest depth of said polished surface.