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Chemical mechanical polishing in-situ end point system

  • US 6,334,807 B1
  • Filed: 04/30/1999
  • Issued: 01/01/2002
  • Est. Priority Date: 04/30/1999
  • Status: Active Grant
First Claim
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1. A method of monitoring the polishing of thin films comprising:

  • periodically monitoring a reflected optical spectrum from random locations of a polished face of a workpiece to produce monitored data, recording said monitored data;

    analyzing said monitored data to determine differences between separate monitored data points of said monitored data; and

    stopping said polishing when a depth of one of said monitored data points is below a predetermined criterion.

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