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Method for fabricating a simplified CMOS polysilicon thin film transistor and resulting structure

  • US 6,335,230 B1
  • Filed: 01/04/2000
  • Issued: 01/01/2002
  • Est. Priority Date: 07/28/1997
  • Status: Expired due to Fees
First Claim
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1. A method for forming an activated area for a MOS structure, comprising:

  • providing a semiconductor substrate with an active surface;

    forming a first layer comprising doped polysilicon of a first conductivity type over said active surface;

    patterning said first layer to form a first polysilicon area;

    forming an isolation barrier laterally adjacent said first polysilicon area and abutting said first polysilicon area in a corner formed at a junction between said first polysilicon area and a surface of a layer or structure upon which said first polysilicon area is located; and

    forming a second layer comprising doped polysilicon of a second conductivity type laterally adjacent said isolation barrier.

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