Simplified method of patterning field dielectric regions in a semiconductor device

• US 6,335,235 B1
• Filed: 08/17/1999
• Issued: 01/01/2002
• Est. Priority Date: 08/17/1999
• Status: Expired due to Term

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Bhakta, Jayendra D., Babcock, Carl P.
• Primary Examiner(s): Smith, Matthew
• Assistant Examiner(s): KESHAVAN, BELUR V
• Application Number:
  US09/376,055
• Time in Patent Office: 868 Days
• Field of Search: 257/367, 257/374, 438/218, 438/219, 438/221, 438/224, 438/225, 438/228
• US Class Current: 438/221
• CPC Class Codes: H01L 21/76229 Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches

Abstract

Isolation regions are formed with greater accuracy and consistency by forming an oxide-silicon nitride stack and then depositing an amorphous silicon antireflective layer, on the silicon nitride layer before patterning. Embodiments also include depositing the silicon nitride layer and the amorphous silicon layer in the same tool.

Claims

1. A method of manufacturing a semiconductor device, which method comprises:

forming an oxide layer on a semiconductor substrate;

forming a silicon nitride layer on the oxide layer in a chamber;

forming an amorphous (α

)-silicon anti-reflective coating on the silicon nitride layer in the chamber; and

forming a photoresist mask on the α

-silicon anti-reflective coating.

2. The method according to claim 1, comprising:

depositing the silicon nitride layer and α

-silicon anti-reflective coating in the same deposition chamber.

3. The method according to claim 2, comprising:

forming the α

-silicon anti-reflective coating to a thickness of about 100 Å

to about 600 Å

.

4. The method according to claim 2, comprising:

introducing a nitrogen-containing gas and SiCl₂H₂ into a plasma chamber at a ratio nitrogen-containing gas to SiCl₂H₂ of about 1;

2 to about 1;

10 to form the silicon nitride layer; and

stopping the flow of nitrogen-containing gas and introducing SiH₄ to form the α

-silicon anti-reflective coating.

5. The method according to claim 1, wherein the silicon nitride is substantially stoichiometric Si₃N₄.

6. The method according to claim 1, wherein the oxide layer is silicon dioxide.

7. The method according to claim 6, comprising:

forming the silicon oxide layer to a thickness of about 100 Å

to about 200 Å

.

8. The method according to claim 1, comprising:

forming the silicon nitride layer to a thickness of about 1200 Å

to about 2000 Å

.

9. The method according to claim 1, wherein the α

-silicon anti-reflective coating has an extinction coefficient (k) greater than about 0.4.

10. The method according to claim 9, wherein the α

-silicon anti-reflective coating has a k of about 0.4 to about 0.6.

11. The method according to claim 1, further comprising:

patterning the photoresist mask to form a plurality of openings; and

etching a plurality of corresponding openings in the semiconductor substrate through the oxide layer, silicon nitride layer and α

-silicon anti-reflective coating.

12. The method according to claim 11, comprising:

etching the semiconductor substrate to form a plurality of openings having a width at the surface of the substrate of about 0.15 microns to about 0.3 microns.

13. The method according to claim 1, further comprising:

forming a plurality of openings in the photoresist mask, the α

-silicon anti-reflective coating, the silicon nitride layer, the oxide layer and the semiconductor substrate; and

removing the photoresist mask, and lining the plurality of openings in the substrate with an oxide.