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Capacitor for a semiconductor device and method for forming the same

  • US 6,335,240 B1
  • Filed: 01/06/1999
  • Issued: 01/01/2002
  • Est. Priority Date: 01/06/1998
  • Status: Expired due to Term
First Claim
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1. A method for forming a capacitor of a semiconductor device, comprising:

  • (a) forming a storage node;

    (b) forming a dielectric layer of amorphous Al2O3, on the storage node; and

    (c) forming a plate node on the dielectric layer, wherein a primary densification is performed on the amorphous Al2O3 dielectric layer, after forming the plate node, wherein a secondary densification is additionally performed on the amorphous Al2O3 dielectric layer, before forming a plate node, and wherein the secondary densification is performed by annealing the amorphous Al2O3 dielectric layer at a temperature below the temperature of crystallizing the amorphous Al2O3 layer.

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