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Hydrogen-doped polycrystalline group IV-based TFT having a larger number of monohydride-IV bonds than higher order-IV bonds

  • US 6,335,266 B1
  • Filed: 05/15/2000
  • Issued: 01/01/2002
  • Est. Priority Date: 09/04/1997
  • Status: Expired due to Term
First Claim
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1. A method of forming a polycrystalline semiconductor layer, comprising the steps of:

  • forming a polycrystalline semiconductor layer essentially comprising Si, Ge or SiGe, on a support substrate;

    adding hydrogen to the polycrystalline semiconductor layer; and

    dissociating hydrogen in the polycrystalline semiconductor layer added with hydrogen by heating the polycrystalline semiconductor layer so that the number of monohydride structures of couplings between Si or Ge, and H is larger than the number of higher-order hydride structures.

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