Systems and methods for two-sided etch of a semiconductor substrate

• US 6,335,293 B1
• Filed: 07/12/1999
• Issued: 01/01/2002
• Est. Priority Date: 07/13/1998
• Status: Expired due to Fees

• Current Assignee: Mattson Technology, Inc. (Beijing Economic & Technology Development Area)
• Original Assignee: Mattson Technology, Inc. (Beijing Economic & Technology Development Area)
• Inventors: Mantripragada, Sai, George, Rene, Guerra, Robert, Ranft, Craig, Wiesnoski, Allan, Luo, Laizhong, Holden, Ying, Kuhl, Nicole
• Primary Examiner(s): DANG, THI D
• Application Number:
  US09/351,259
• Time in Patent Office: 904 Days
• Field of Search: 156/345, 438/710, 438/730, 216/67, 216/68, 118/723.IR, 118/723.ER
• US Class Current: 345/173
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32633 Baffles
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

A system and method for two-sided etch of a semiconductor substrate. Reactive species are generated and flowed toward a substrate for processing. A diverter is positioned between the generation chamber and the substrate. A portion of the reactive species flows through the diverter for processing the front of the substrate. Another portion is diverted around the substrate to the backside for processing. A flow restricter is placed between the substrate and the exhaust system to increase the residence time of reactive species adjacent to the backside.

Claims

1. A method for processing a semiconductor substrate comprising:

generating a reactive species for processing the substrate;

inducing a flow of the reactive species toward the substrate;

allowing a first portion of the flow to reach a first side of the substrate for processing; and

diverting a second portion of the flow to bypass the first side and flow to a second side of the substrate for processing.

3. The reactor system of claim 1 wherein a first portion of the flow of reactive species flows through said diverter, and a second portion of the flow of reactive species flows around the diverter.

4. The reactor system of claim 1 wherein the diverter forms a pattern of holes.

5. The reactor system of claim 4 wherein the hole pattern is substantially symmetric about an axis perpendicular to and through the substrate center.

6. The reactor system of claim 4 wherein the holes have a diameter of less than about 0.2 inches.

7. The reactor system of claim 1 wherein said diverter is made of a material selected from the group consisting of aluminum, anodized aluminum, Teflon, and quartz.

8. The reactor system of claim 1 wherein said diverter is at least as large in diameter as said substrate.

9. The reactor system of claim 1 wherein said diverter is about five to about 20 percent larger in diameter than said substrate.

10. The reactor system of claim 1 wherein said diverter includes a skirt which extends towards said substrate.

11. The reactor system of claim 1 wherein the distance separating said diverter from said first side of said substrate ranges from about 5 to 50 percent of the substrate diameter.

12. The reactor system of claim 1 further comprising a flow restricter between said substrate and said gas outlet, wherein said flow restricter is configured to increase residence time of the reactive species adjacent to the second side of the substrate to enhance processing of the second side of the substrate.

13. The reactor system of claim 1, further comprising a supplementary gas inlet adjacent to the second side of the substrate.

2. A reactor system for etching two sides of a semiconductor substrate, said reactor system comprising:

a generation chamber for producing reactive species,

a gas inlet for providing gas to said generation chamber,

a process chamber within which a semiconductor substrate is processed,

a gas outlet for exhausting the gas from the process chamber,

wherein a flow of reactive species is induced from said generation chamber through said process chamber to the gas outlet, and

a diverter between said generation chamber and said semiconductor substrate, wherein said substrate has a first side facing substantially towards said diverter and a second side facing substantially away from said diverter,

wherein the diverter is configured to divert a portion of the reactive species to bypass the first side of the semiconductor substrate and enhance processing of the second side of the substrate.

14. A system for processing a first side and a second side of a semiconductor substrate, the system comprising:

a generation chamber for producing plasma products;

a support for the semiconductor substrate configured to expose the first side and the second side of the semiconductor substrate for processing; and

a diverter disposed between the generation chamber and the support, the diverter configured to divert a portion of the plasma products to bypass the first side of the substrate and flow to the second side of the substrate for processing.

15. The system of claim 14, wherein the diverter is configured such that a second portion of the plasma products flows through the diverter to reach the first side of the substrate for processing.

16. The system of claim 14, wherein the support is configured such that the first side of the substrate faces substantially towards the diverter, and the second side of the substrate faces substantially away from the diverter.

17. The system of claim 16, wherein the diverter is configured such that the processing rate on the second side of the substrate is greater than the processing rate on the first side of the substrate.

18. The system of claim 14, wherein the diverter forms a pattern of holes.

19. The system of claim 18, further comprising a flow restricter between the substrate and a gas outlet, wherein the flow restricter is configured to increase residence time of the plasma products adjacent to the second side of the substrate to enhance processing of the second side of the substrate.

20. The system of claim 18, further comprising a supplementary gas inlet adjacent to the second side of the substrate.