Method for improving performance of organic semiconductors in bottom electrode structure

• US 6,335,539 B1
• Filed: 11/05/1999
• Issued: 01/01/2002
• Est. Priority Date: 11/05/1999
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Purushothaman, Sampath, Kymissis, Ioannis, Dimitrakopoulos, Christos Dimitrios
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Hoang, Quoc
• Application Number:
  US09/434,365
• Time in Patent Office: 788 Days
• Field of Search: 257/40, 257/57, 438/99, 438/149, 438/151, 438/158, 438/161, 438/197
• US Class Current: 257/40
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: H10K 10/464 Lateral top-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/482 the IGFET comprising multiple separately-addressable gate electrodes
• CPC Class Codes: H10K 10/84 Ohmic electrodes, e.g. source or drain electrodes
• CPC Class Codes: H10K 71/60 Forming conductive regions or layers, e.g. electrodes

Abstract

A method for improving the performance of an organic thin film field effect transistor comprising the steps of: (a) forming a transistor structure having patterned source and drain electrodes; and (b) treating the patterned source and drain electrodes with a thiol compound having the formula, RSH, wherein R is a linear or branched, substituted or unsubstituted, alkyl, alkenyl, cycloalkyl or aromatic containing from about 6 to about 25 carbon atoms under conditions that are effective in forming a self-assembled monolayer of said thiol compound on said electrodes. Organic thin film transistor structures containing the self-assembled monolayer of the present invention are also disclosed.

Claims

1. An organic thin film transistor comprising at least bottom source/drain electrodes having an organic semiconductor formed over said bottom source/drain electrodes, wherein said bottom source/drain electrodes have a self-assembled monolayer formed thereon, said self-assembled monolayer comprising a thiol compound having the formula:

2. The organic thin film transistor of claim 1 wherein a gate region is formed above or below said organic semiconductor.

3. The organic thin film transistor of claim 1 wherein a gate region is formed above the organic semiconductor and below the organic semiconductor.

4. The organic thin film transistor of claim 2 wherein said gate region comprises a gate surrounded by a gate insulator.

5. The organic thin film transistor of claim 3 wherein said gate region comprises a gate surrounded by a gate insulator.

6. The organic thin film transistor of claim 1 wherein said patterned source and drain electrodes are composed of the same or different conductive metal, metal alloy, metal oxide, metal alloy oxide or a stack thereof.

7. The organic thin film transistor of claim 6 wherein said conductive metal is a metal selected from the group consisting of gold, platinum, tungsten, palladium, aluminum, chromium, titanium and a stack thereof.

8. The organic thin film transistor of claim 7 wherein said conductive metal is gold, chromium, platinum, titanium or a stack thereof.

9. The organic thin film transistor of claim 1 wherein said organic semiconductor material is a material selected from the group consisting of pentacene, hexithiophene, polythiophene and phthalocyanine.

10. The organic thin film transistor of claim 9 wherein said organic semiconductor is pentacene.

11. The organic thin film transistor of claim 1 wherein said patterned source and drain electrodes are formed on an exposed surface of a substrate.

12. The organic thin film transistor of claim 11 wherein said substrate is a Si-containing substrate selected from the group consisting of SiO₂, Si, SiGe, silicon-on-insulator and glass.

13. The organic thin film transistor of claim 11 wherein said substrate is an Al-containing substrate.

14. The organic thin film transistor of claim 1 wherein said patterned source and drain electrodes are formed on a gate insulator.

15. The organic thin film transistor of claim 14 wherein said gate insulator is an inorganic or organic dielectric material.

16. The organic thin film transistor of claim 15 wherein said inorganic dielectric is SiO₂ or Si₃N₄ .

17. The organic thin film transistor of claim 15 wherein said organic dielectric is polyimide, parylene or polymethylmethacrylate.

18. The organic thin film transistor of claim 1 wherein said thiol compound is 1-hexadecanethiol or 1-octadecane thiol.

19. The organic thin film transistor of claim 18 wherein thiol is 1-hexadecanethiol.