Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device

• US 6,335,546 B1
• Filed: 07/30/1999
• Issued: 01/01/2002
• Est. Priority Date: 07/31/1998
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Yuasa, Takayuki, Tsuda, Yuhzoh
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Wille, Douglas A.
• Application Number:
  US09/364,768
• Time in Patent Office: 886 Days
• Field of Search: 257/94, 257/103, 438/42, 438/44, 438/46, 438/47, 117/45, 117/902, 117/913
• US Class Current: 257/94
• CPC Class Codes: H01L 21/02378 Silicon carbide
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/0243 Surface structure
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/02647 Lateral overgrowth
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

A nitride semiconductor structure includes: a substrate having a growth surface, a convex portion and a concave portion being formed on the growth surface; and a nitride semiconductor film grown on the growth surface. A cavity is formed between the nitride semiconductor film and the substrate in the concave portion.

Claims

1. A light emitting device or a laser device comprising:

a nitride semiconductor structure including a substrate having a growth surface, a convex portion and a concave portion being formed on the growth surface, and a nitride semiconductor film grown on the growth surface, and

a light emitting structure formed on the nitride semiconductor structure, the light emitting structure including an active layer comprising a nitride semiconductor, wherein the convex portion and the concave portion of the nitride semiconductor structure comprise a plurality of parallel grooves.

2. A light emitting device or a laser device according to claim 1, wherein the plurality of grooves have a width b and a depth h such that b≦

about 10 μ

m and h≧

0.2×

b, and wherein adjoining ones of the plurality of grooves are spaced apart from each other so as to retain a distance of about 20 μ

m or less between center lines thereof.

3. A light emitting device or a laser device according to claim 1, wherein the plurality of grooves have a width b and a depth h such that b≦

about 10 μ

m and h≧

b, and wherein adjoining ones of the plurality of grooves are spaced apart from each other so as to retain a distance of about 20 μ

m or less between center lines thereof.

4. A light emitting device or a laser device according to claim 1, wherein the plurality of grooves are formed along a <

1-100>

direction of the nitride semiconductor.

5. A light emitting device or a laser device according to claim 1, wherein the plurality of grooves are formed so as to extend along a cleavage plane or an etching stable plane of the substrate.

6. A light emitting device or a laser device according to claim 1, wherein the growth surface of the substrate of the nitride semiconductor structure comprises a nitride semiconductor formed on the substrate, and

the plurality of grooves are formed along a < 11-20>

direction of the substrate semiconductor.

7. A light emitting device or a laser device according to claim 2, wherein the growth surface of the substrate of the nitride semiconductor structure comprises a nitride semiconductor formed on the substrate, and

the plurality of grooves are formed along a <

11-20>

direction of the nitride semiconductor.

8. A light emitting device or a laser device according to claim 3, wherein the growth surface of the substrate of the nitride semiconductor structure comprises a nitride semiconductor formed on the substrate, and

the plurality of grooves are formed along a <

11-20>

direction of the nitride semiconductor.

9. The light emitting device or laser device of claim 1, wherein the nitride semiconductor includes at least one element selected from the group consisting of B, As, P and Sb.

10. A light emitting device or a laser device comprising:

a nitride semiconductor structure including a substrate having a growth surface, a convex portion and a concave portion being formed on the growth surface, and a nitride semiconductor film grown on the growth surface; and

a light emitting structure formed on the nitride semiconductor structure, the light emitting structure including an active layer comprising a nitride semiconductor;

wherein a cavity is formed between the nitride semiconductor film and the substrate of the nitride semiconductor structure in the concave portion.

11. A light emitting device or a laser device according to claim 10, wherein the convex portion and the concave portion of the nitride semiconductor structure comprise a plurality of parallel grooves.

12. A light emitting device or a laser device according to claim 11, wherein the plurality of grooves are formed along a <

1-100>

direction of the nitride semiconductor.

13. A light emitting device or a laser device according to claim 11, wherein the plurality of grooves are formed so as to extend along a cleavage plane or an etching stable plane of the substrate.

14. A light emitting device or a laser device according to claim 11, wherein the growth surface of the substrate of the nitride semiconductor structure comprises a nitride semiconductor formed on the substrate, and

the plurality of grooves are formed along a < 11-20>

direction of the nitride semiconductor.

15. The light emitting device or laser device of claim 11, wherein the nitride semiconductor includes at least one element selected from the group consisting of B, As, P and Sb.