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Chemical-mechanical polishing apparatus and method

  • US 6,336,846 B1
  • Filed: 04/10/2000
  • Issued: 01/08/2002
  • Est. Priority Date: 07/02/1999
  • Status: Expired due to Term
First Claim
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1. A CMP method comprising steps of:

  • fixing a semiconductor wafer on a wafer carrier having a retainer ring for guiding circumferential edges of the semiconductor wafer;

    polishing the semiconductor wafer on a CMP apparatus having a polishing head and a polishing pad covered with slurry; and

    after the polishing process is completed, moving the polishing head upward so that the semiconductor wafer is separated from the polishing pad, while reducing the adsorptive force between the semiconductor wafer and the polishing pad by injecting air between the semiconductor wafer and the polishing pad through an opening in the retainer ring.

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