Method of fabrication of a crystalline silicon thin film semiconductor with a thin channel region
First Claim
Patent Images
1. A method for forming a semiconductor device comprising the steps of:
- forming a semiconductor film comprising silicon on an insulating surface;
crystallizing said semiconductor film; and
thinning at least a portion of the crystallized semiconductor film to become a channel-forming region to a thickness of 300 Å
or less;
patterning the crystallized semiconductor film into a marker part for aligning a mask and an insular semiconductor part at the same time.
0 Assignments
0 Petitions
Accused Products
Abstract
A method for forming a semiconductor device is disclosed. A semiconductor film comprising silicon is formed on a substrate. The semiconductor film is crystallized. The crystallized semiconductor film is patterned into a marker part for aligning a mask and an insular semiconductor part at the same time. A part of the semiconductor film to become a channel formation region is thinned to a thickness 300 Å or less.
95 Citations
21 Claims
-
1. A method for forming a semiconductor device comprising the steps of:
-
forming a semiconductor film comprising silicon on an insulating surface;
crystallizing said semiconductor film; and
thinning at least a portion of the crystallized semiconductor film to become a channel-forming region to a thickness of 300 Å
or less;
patterning the crystallized semiconductor film into a marker part for aligning a mask and an insular semiconductor part at the same time. - View Dependent Claims (7, 10, 16)
-
-
2. A method for forming a semiconductor device comprising the steps of:
-
forming a semiconductor film comprising silicon on an insulating surface;
crystallizing said semiconductor film;
thinning at least a portion of the crystallized semiconductor film to become a channel-forming region to a thickness of 300 Å
or less;
patterning the crystallized semiconductor film into a marker part for aligning a mask and an insular semiconductor part at the same time; and
forming a transistor comprising a source region, a drain region and a channel-forming region formed in said insular semiconductor part, said channel-forming region being formed between said source region and said drain region. - View Dependent Claims (8, 11, 17)
-
-
3. A method for forming a semiconductor device comprising the steps of:
-
forming a semiconductor film comprising silicon on an insulating surface;
crystallizing said semiconductor film;
thinning at least a portion of the crystallized semiconductor film to become a channel-forming region to a thickness of 300 Å
or less;
patterning the crystallized semiconductor film into a marker part for aligning a mask and an insular semiconductor part at the same time;
forming a gate insulating film over said marker part and said insular semiconductor part;
forming a gate electrode on said gate insulating film; and
forming a source region and a drain region by introducing a dopant into said insular semiconductor part using a mask comprising said gate electrode to thereby form a channel-forming region adjacent to said gate electrode and between said source region and said drain region. - View Dependent Claims (12, 18)
-
-
4. A method for forming a semiconductor device comprising the steps of:
-
forming a semiconductor film comprising silicon on an insulating surface;
crystallizing said semiconductor film by heat treatment;
irradiating the crystallized semiconductor film with a laser light;
thinning at least a portion of the crystallized semiconductor film to become a channel-forming region to a thickness of 300 Å
or less after said irradiating step;
patterning the crystallized semiconductor film into a marker part for aligning a mask and an insular semiconductor part at the same time after said irradiating step;
forming a gate insulating film over said marker part and said insular semiconductor part;
forming a gate electrode on said gate insulating film; and
forming a source region and a drain region by introducing a dopant into said insular semiconductor part using a mask comprising said gate electrode to thereby form a channel-forming region adjacent to said gate electrode and between said source region and said drain region. - View Dependent Claims (9, 13, 19)
-
-
5. A method for forming a semiconductor device comprising the steps of:
-
forming a semiconductor film comprising silicon on an insulating surface;
crystallizing said semiconductor film;
thinning at least a portion of the crystallized semiconductor film to become a channel-forming region to a thickness of 300 Å
or less;
patterning the semiconductor film into a marker part for aligning a mask and an insular semiconductor part which includes said portion to become said channel-forming region, at the same time;
forming a gate insulating film over said marker part and said insular semiconductor part;
forming a gate electrode on said gate insulating film; and
forming a source region and a drain region by introducing a dopant into said insular semiconductor part using a mask comprising said gate electrode to thereby form said channel-forming region adjacent to said gate electrode and between said source region and said drain region. - View Dependent Claims (14, 20)
-
-
6. A method for forming a semiconductor device comprising the steps of:
-
forming a semiconductor film comprising silicon on an insulating surface;
crystallizing said semiconductor film;
thinning at least a portion of the crystallized semiconductor film to become a channel-forming region to a thickness of 300 Å
or less;
patterning the semiconductor film into a marker part for aligning a mask and an insular semiconductor part which includes said portion to become said channel-forming region, at the same time;
forming a gate insulating film having a thickness of 500 Å
or less over said marker part and said insular semiconductor part;
forming a gate electrode on said gate insulating film; and
forming a source region and a drain region by introducing a dopant into said insular semiconductor part using a mask comprising said gate electrode to thereby form said channel-forming region adjacent to said gate electrode and between said source region and said drain region. - View Dependent Claims (15, 21)
-
Specification