Semiconductor device and method for forming the same

• US 6,337,236 B2
• Filed: 12/29/2000
• Issued: 01/08/2002
• Est. Priority Date: 03/27/1991
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takemura, Yasuhiko, Yamazaki, Shunpei
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): LATTIN, CHRISTOPHER W
• Application Number:
  US09/750,064
• Publication Number:
  US 20010001073A1
• Time in Patent Office: 375 Days
• Field of Search: 438/151, 438/166, 438/197, 438/199, 438/388, 438/479, 438/487
• US Class Current: 438/166
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/0922 Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
• CPC Class Codes: H01L 27/1281 by using structural features to control crystal growth, e.g. placement of grain filters
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: Y10S 438/967 Semiconductor on specified insulator

Abstract

A semiconductor device and a method for forming the same. The semiconductor device comprises an insulating or semiconductor substrate, a thermally-contractive insulating film which is formed on said substrate and provided with grooves, and a semiconductor film which is formed on the thermally-contractive insulating film and divided in an islandish form through the grooves. The thermally-contractive insulating film is contracted in a heat process after the semiconductor film is formed.

Claims

1. A method for manufacturing a semiconductor device comprising the steps of:

forming an insulating film over a substrate;

forming a semiconductor film on said insulating film;

first heating said semiconductor film at a first temperature of 500°

C. or more;

second heating said semiconductor film after said first heating at a second temperature of 700°

C. or more; and

third heating said semiconductor film in an atmosphere containing oxygen,

wherein said second temperature is higher than said first temperature.

2. A method according to claim 1, wherein said insulating film comprises a material selected from the group consisting of phosphosilicate glass, borosilicate glass, phosphoborosilicate glass and quartz glass.

3. A method according to claim 1, wherein said insulating film has a heat contraction in a range of 30-500 ppm.

4. A method according to claim 1, wherein said insulating film contains hydrogen at a concentration of 10-30 atomic %.

5. A method according to claim 1, wherein said semiconductor film is selected from the group consisting of an amorphous semiconductor film, a microcrytalline semiconductor film and a polycrystalline semiconductor film.

6. A method for manufacturing a semiconductor device comprising the steps of:

forming an insulating film over a substrate;

forming a semiconductor film on said insulating film;

first heating said semiconductor film at a first temperature to crystallize said semiconductor film;

second heating the crystallized semiconductor at a second temperature higher than said first temperature; and

third heating said crystallized semiconductor film in an atmosphere containing oxygen.

7. A method according to claim 6, wherein said insulating film comprises a material selected from the group consisting of phosphosilicate glass, borosilicate glass, phosphoborosilicate glass and quartz glass.

8. A method according to claim 6, wherein said insulating film has a heat contraction in a range of 30-500 ppm.

9. A method according to claim 6, wherein said insulating film contains hydrogen at a concentration of 10-30 atomic %.

10. A method for manufacturing a semiconductor device comprising the steps of:

forming an insulating film over a substrate;

forming a semiconductor film on said insulating film;

first heating said semiconductor film at a first temperature 500 to 700°

C.;

second heating said semiconductor film at a second temperature of 700 to 1000°

C.; and

third heating said semiconductor film in an atmosphere containing oxygen.

11. A method according to claim 10, wherein said insulating film comprises a material selected from the group consisting of phosphosilicate glass, borosilicate glass, phosphoborosilicate glass and quartz glass.

12. A method according to claim 10, wherein said insulating film has a heat contraction in a range of 30-500 ppm.

13. A method according to claim 10, wherein said insulating film contains hydrogen at a concentration of 10-30 atomic %.

14. A method according to claim 10, wherein said semiconductor film is selected from the group consisting of an amorphous semiconductor film, a microcrystalline semiconductor film and a polycrystalline semiconductor film.

15. A method for manufacturing a semiconductor device comprising the steps of:

forming an insulating film over a substrate;

forming a semiconductor film on said insulating film;

first heating said semiconductor film at a temperature to crystallize said semiconductor film;

second heating the crystallized semiconductor film at a second temperature higher than said first temperature; and

third heating said crystallized semiconductor film to form a gate insulating film on said crystallized semiconductor film.

16. A method according to claim 15, wherein said insulating film comprises a material selected from the group consisting of phosphosilicate glass, borosilicate glass, phosphoborosilicate glass and quartz glass.

17. A method according to claim 15, wherein said insulating film has a heat contraction in a range of 300-500 ppm.

18. A method according to claim 15, wherein said insulating film contains hydrogen at a concentration of 10-30 atomic %.

19. A method for manufacturing a semiconductor device comprising the steps of:

forming an insulating film over a substrate;

forming a semiconductor film on said insulating film;

first heating said semiconductor film at a first temperature of 500 to 700°

C.;

second heating said semiconductor film at a second temperature of 700 to 1000°

C.;

third heating said semiconductor film to from a gate insulating film on said semiconductor film; and

forming a gate electrode over said semiconductor film with said gate insulating film interposed therebetween.

20. A method according to claim 19, wherein said insulating film comprises a material selected from the group consisting of phosphosilicate glass, borosilicate glass, phosphoborosilicate glass and quartz glass.

21. A method according to claim 19, wherein said insulating film has a heat contraction in a range of 30-500 ppm.

22. A method according to claim 19, wherein said insulating film contains hydrogen at a concentration of 10-30 atomic %.

23. A method according to claim 19, wherein said semiconductor film is selected from the group consisting of an amorphous semiconductor film, a microcrystalline semiconductor film and a polycrystalline semiconductor film.

24. A method for manufacturing a semiconductor device comprising the steps of:

forming an insulating film over a substrate;

forming a semiconductor film on said insulating film;

first heating said semiconductor film to form crystallize said semiconductor film at a first temperature of 500 to 700°

C.;

second heating the crystallized semiconductor film at a second temperature of 700 to 1000°

C., and

third heating said crystallized semiconductor film in an atmosphere containing oxygen.

25. A method according to claim 24, wherein said insulating film comprising a material selected from the group consisting of phosphosilicate glass, borosilicate glass, phosphoborosilicate glass and quartz glass.

26. A method according to claim 24, wherein said insulating film has a heat contraction in a range of 30-500 ppm.

27. A method according to claim 24, wherein said insulating film contains hydrogen at a concentration of 10-30 atomic %.