Semiconductor component

• US 6,337,499 B1
• Filed: 08/04/2000
• Issued: 01/08/2002
• Est. Priority Date: 11/03/1997
• Status: Expired due to Term

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Werner, Wolfgang
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): NGUYEN, DILINH P
• Application Number:
  US09/530,668
• Time in Patent Office: 522 Days
• Field of Search: 257/213, 257/288, 257/328, 257/499, 257/329, 257/330, 257/331, 257/339, 257/341, 257/342, 438/212
• US Class Current: 257/329
• CPC Class Codes: H01L 21/2255 the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors

Abstract

The invention is directed to a semiconductor component having a semiconductor body with two principal faces, at least two electrodes at least one electrode being provided on a principal face, and zones of a conductivity type opposite one another that are arranged in alternation in the semiconductor body and extend perpendicularly to the two principal faces. For an application of a voltage to the two electrodes, the zones arranged in alternation mutually clear of charge carriers so that an essentially constant field strength is built up in the semiconductor body between the two electrodes These zones arranged in alternation inventively contain at least one cavity that is preferably closed by a glass layer.

Claims

1. A semiconductor component comprising:

a semiconductor body with two principal faces;

at least two electrodes wherein at least one of said electrodes is provided on one of said principal faces; and

zones of a conductivity type opposite one another that are arranged in alternation in said semiconductor body and extend perpendicularly to said two principal faces, an application of a voltage to said two electrodes mutually clearing said zones of charge carriers so that an essentially constant field strength is built up in said semiconductor body between said two electrodes said zones containing a cavity that is closed by a glass layer or by a sputtered layer.

2. The semiconductor component according to claim 1, wherein said cavity has a trench structure with a width of approximately 1 μ

m and a depth of approximately 40 μ

m.

3. The semiconductor component according to claim 2, wherein said cavity is closed at an end lying opposite an end at one of said principal faces.

4. The semiconductor component according to claim 2, wherein said cavity is closed by said glass layer, and said glass layer comprises doped borophosphorous silicate.

5. The semiconductor component according to claim 1 wherein inside walls of said cavity comprise a passivation layer.

6. The semiconductor component according to claim 5, wherein said passivation layer is a silicon dioxide layer having a layer thickness of approximately 50 nm.