Electro-optical device and method of driving the same
First Claim
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1. A method of manufacturing an active matrix device including at least an inverted stagger type thin film transistor, said method comprising the steps of:
- forming at least a gate line comprising aluminum over a substrate;
forming a gate insulating film on a portion of the gate line;
forming an amorphous semiconductor film comprising silicon on the gate insulating film;
forming a source region, a drain region and a channel region between the source and drain regions in the amorphous semiconductor film;
forming at least a data line over the substrate;
forming a leveling film comprising an organic material to provide a leveled upper surface;
forming a conductive film on the leveling film;
forming a photoresist on the conductive film to pattern the conductive film;
irradiating the substrate from a back side thereof with a light using the gate line and the data line as a mask to pattern the conductive film in order to form at least a pixel electrode being electrically connected to one of the source and drain regions, wherein a periphery of the pixel electrode is defined in a self-alignment manner with respect to the gate and data lines.
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Abstract
An active matrix display device for suppressing voltage variation ΔV due to off-operation of a gate pulse, including TFTs and picture-element electrodes, at least one of the TFTs being assigned to each picture element, and each of the TFTs having a gate electrode connected to a gate line (first gate line), and a source and a drain one of which is connected to a data line, wherein a picture-element electrode concerned is formed so as to be overlapped with the first gate line through an insulator, and also so as to be overlapped through an insulator with a gate line other than the first gate line or a wiring disposed in parallel to the first gate line.
134 Citations
24 Claims
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1. A method of manufacturing an active matrix device including at least an inverted stagger type thin film transistor, said method comprising the steps of:
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forming at least a gate line comprising aluminum over a substrate;
forming a gate insulating film on a portion of the gate line;
forming an amorphous semiconductor film comprising silicon on the gate insulating film;
forming a source region, a drain region and a channel region between the source and drain regions in the amorphous semiconductor film;
forming at least a data line over the substrate;
forming a leveling film comprising an organic material to provide a leveled upper surface;
forming a conductive film on the leveling film;
forming a photoresist on the conductive film to pattern the conductive film;
irradiating the substrate from a back side thereof with a light using the gate line and the data line as a mask to pattern the conductive film in order to form at least a pixel electrode being electrically connected to one of the source and drain regions, wherein a periphery of the pixel electrode is defined in a self-alignment manner with respect to the gate and data lines. - View Dependent Claims (2, 3, 4)
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5. A method of manufacturing an active matrix device including at least an inverted stagger type thin film transistor, said method comprising the steps of:
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forming at least a gate line comprising aluminum over a substrate;
forming a gate insulating film on a portion of the gate line;
forming an amorphous semiconductor film comprising silicon on the gate insulating film;
forming a source region, a drain region and a channel region between the source and drain regions in the amorphous semiconductor film;
forming at least a data line over the substrate;
forming a leveling film comprising an organic material to provide a leveled upper surface;
forming a transparent conductive film on the leveling film;
forming a photoresist on the conductive film to pattern the conductive film;
irradiating the substrate from a back side thereof with a light using the gate line and the data line as a mask to pattern the conductive film in order to form at least a pixel electrode being electrically connected to one of the source and drain regions, wherein a periphery of the pixel electrode is defined in a self-alignment manner with respect to the gate and data lines, wherein the pixel electrode is not formed over a portion of the gate line while the pixel electrode is formed over the other portion of the gate line. - View Dependent Claims (6, 7, 8)
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9. A method of manufacturing an active matrix device including at least an inverted stagger type thin film transistor, said method comprising the steps of:
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forming at least a gate line comprising aluminum over a substrate;
forming a gate insulating film on a portion of the gate line;
forming an amorphous semiconductor film comprising silicon on the gate insulating film;
forming a source region, a drain region and a channel region between the source and drain regions in the amorphous semiconductor film;
forming at least a data line over the substrate, said data line being electrically connected to one of the source and drain regions;
forming a leveling film comprising an organic material to provide a leveled upper surface;
forming a transparent conductive film on the leveling film;
forming a photoresist on the conductive film to pattern the conductive film;
irradiating the substrate from a back side thereof with a light using the gate line and the data line as a mask to pattern the conductive film in order to form at least a pixel electrode being electrically connected to one of the source and drain regions, wherein a periphery of the pixel electrode is defined in a self-alignment manner with respect to the gate and data lines. - View Dependent Claims (10, 11, 12)
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13. A method of manufacturing an active matrix device including at least an inverted stagger type thin film transistor, said method comprising the steps of:
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forming at least a gate line comprising aluminum over a substrate;
forming a gate insulating film on a portion of the gate line;
forming an amorphous semiconductor film comprising silicon on the gate insulating film;
forming a source region, a drain region and a channel region between the source and drain regions in the amorphous semiconductor film;
forming at least a data line over the substrate;
forming a leveling film comprising an organic material to provide a leveled upper surface;
forming a transparent conductive film on the leveling film;
forming a photoresist on the conductive film to pattern the conductive film;
irradiating the substrate from a back side thereof with a light using the gate line and the data line as a mask to pattern the conductive film in order to form at least a pixel electrode being electrically connected to one of the source and drain regions, wherein a periphery of the pixel electrode is defined in a self-alignment manner with respect to the gate and data lines, wherein the periphery of the pixel electrode overlaps the gate line and the data line to form a capacitor. - View Dependent Claims (14, 15, 16)
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17. A method of manufacturing an active matrix device including at least an inverted stagger type thin film transistor, said method comprising the steps of:
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forming at least a gate line over a substrate;
forming a gate insulating film on a portion of the gate line;
forming an amorphous semiconductor film comprising silicon on the gate insulating film;
forming a source region, a drain region and a channel region between the source and drain regions in the amorphous semiconductor film;
forming at least a data line over the substrate;
forming a leveling film comprising an organic material to provide a leveled upper surface;
forming a transparent conductive film on the leveling film;
forming a photoresist on the conductive film to pattern the conductive film;
irradiating the substrate from a back side thereof with a light using the gate line and the data line as a mask to pattern the conductive film in order to form at least a pixel electrode being electrically connected to one of the source and drain regions, wherein a periphery of the pixel electrode is defined in a self-alignment manner with respect to the gate and data lines, wherein the periphery of the pixel electrode overlaps at least the gate line with the leveling film therebetween. - View Dependent Claims (18, 19, 20)
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21. A method of manufacturing an active matrix device including at least an inverted stagger type thin film transistor, said method comprising the steps of:
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forming at least a gate line over a substrate;
forming a gate insulating film on a portion of the gate line;
forming an amorphous semiconductor film comprising silicon on the gate insulating film;
forming a source region, a drain region and a channel region between the source and drain regions in the amorphous semiconductor film;
forming at least a data line over the substrate;
forming a leveling film comprising an organic material to provide a leveled upper surface;
forming a transparent conductive film on the leveling film;
forming a photoresist on the conductive film to pattern the conductive film;
irradiating the substrate from a back side thereof with a light using the gate line and the data line as a mask to pattern the conductive film in order to form at least a pixel electrode being electrically connected to one of the source and drain regions, wherein a periphery of the pixel electrode is defined in a self-alignment manner with respect to the gate and data lines, wherein the periphery of the pixel electrode overlaps at least the data line with the leveling film therebetween. - View Dependent Claims (22, 23, 24)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsTakemura, Yasuhiko
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Primary Examiner(s)Sikes, William L.
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Assistant Examiner(s)Duong, Tai V.
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Application NumberUS09/419,619Time in Patent Office816 DaysField of Search349/38, 349/43, 349/122, 349/187, 430/321, 438/30, 257/59, 257/72US Class Current349/187CPC Class CodesG02F 1/134309 characterised by their geom...G02F 1/136213 Storage capacitors associat...G09G 2320/0209 Crosstalk reduction, i.e. t...G09G 2320/0219 Reducing feedthrough effect...G09G 3/3648 using an active matrix G09G...G09G 3/3659 the addressing of the pixel...
