Method and apparatus for sputtering thin films

• US 6,338,777 B1
• Filed: 10/23/1998
• Issued: 01/15/2002
• Est. Priority Date: 10/23/1998
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Longstreth White, Richard
• Primary Examiner(s): Nguyen, Nam
• Assistant Examiner(s): VerSteeg, Steven H.
• Application Number:
  US09/178,362
• Time in Patent Office: 1,180 Days
• Field of Search: 204/192.12, 204/192.15, 204/192.16, 204/298.08, 204/298.13, 204/298.14, 204/298.26
• US Class Current: 204/192.15
• CPC Class Codes: C23C 14/0605 Carbon
• CPC Class Codes: C23C 14/345 using substrate bias
• CPC Class Codes: C23C 14/3464 using more than one target C23C14/56 takes precedence
• CPC Class Codes: G11B 5/851 Coating a support with a magnetic layer by sputtering

Abstract

Improved apparatus and methods for depositing thin films are described. A sputtering system according to the invention enhances the effects normally achieved with negative voltage bias by having two electrodes driven alternately as anode and cathode by a midfrequency power supply in combination with pulsing a negative bias voltage source for the substrate where the film is being deposited. The invention may be embodied in a multiple disk in-line sputtering system or a single disk sputtering system. Although the invention is potentially useful with any thin film which benefits from being deposited using bias, the described embodiment using the sputtering system according to the invention is for depositing an overcoat on a magnetic disk which is carbon based and includes hydrogen and/or nitrogen.

Claims

1. A method for depositing a thin film comprising the steps of:

applying a pulsed negative bias voltage to a substrate in a sputtering chamber;

powering at least first and second sputtering electrodes positioned on a first side of the sputtering chamber with an alternating current power source having a frequency of 10 kHz to 400 kHz connected between the first and second sputtering electrodes to sequentially drive each sputtering electrode as an anode then as a cathode, each of the first and second sputtering electrodes having a sputtering target material attached thereto;

powering at least third and fourth sputtering electrodes positioned on a second opposite side of the sputtering chamber with an alternating current power source having a frequency of 10 kHz to 400 kHz connected between the third and fourth sputtering electrodes to sequentially drive each of the third and fourth sputtering electrodes as an anode then as a cathode, each of the third and fourth sputtering electrodes having the sputtering target material attached thereto;

contemporaneously executing the step of applying a pulsed negative bias voltage to the substrate and the steps of powering the first, second, third and fourth sputtering electrodes, and;

supplying a gas of a first substance to serve as a sputtering gas in the sputtering chamber while powering the sputtering electrodes;

wherein each of the third and fourth sputtering electrodes having a sputtering target material attached thereto and being arranged so that the third sputtering electrode confronts the first sputtering electrode, the powering of the third sputtering electrode occurring to drive the third sputtering electrode as an anode when the first sputtering electrode is being driven as a cathode.

2. The method of claim 1 wherein the pulsed negative bias voltage has a pulsing frequency of 1 kHz to 200 kHz.

3. The method of claim 2 wherein the pulsed negative bias voltage is from 10 to 300 volts.

4. The method of claim 1 wherein the pulsed negative bias voltage is from 10 to 300 volts.

5. The method of claim 1 further comprising the step of supplying a gas of a second substance which generates a component in the sputtering chamber which reacts with the target material and become incorporated into the thin film.

6. The method of claim 5 wherein the target material is carbon and the second substance includes nitrogen.

7. The method of claim 5 wherein the target material is carbon and the second substance includes hydrogen.

8. The method of claim 5 wherein the pulsed negative bias voltage has a pulsing frequency of 1 kHz to 200 kHz, the pulsed negative bias voltage is from 10 to 300 volts, the target material is carbon and the second substance includes nitrogen.

9. A method for sputter depositing a thin film containing carbon and nitrogen onto a substrate having a previously deposited thin film, comprising:

applying a pulsed negative bias voltage to the substrate in a sputtering chamber;

concurrent with the step of applying a pulsed negative bias voltage to the substrate, driving at least first and second sputtering electrodes on a first side of the sputtering chamber with an alternating power supply having a frequency between 10 kHz and 400 kHz, each sputtering electrode having a sputtering target containing carbon attached thereto and driving third and fourth sputtering electrodes in the sputtering chamber with an alternating current power source connected between the third and fourth sputtering electrodes to seguentially drive each of the third and fourth sputtering electrodes as an anode then as an cathode, the driving of the third sputtering electrode occurring to drive the third sputtering electrode as an anode when the first sputtering electrode is being driven as a cathode, the third sputtering electrode being arranged to confront the first sputtering electrode on an opposite side of the sputtering chamber;

supplying a noble gas to serve as a sputtering gas in the sputtering chamber; and

supplying a gas containing nitrogen to the sputtering chamber.

10. The method of claim 9 wherein the pulsed negative bias voltage has a pulsing frequency of 1 kHz to 200 kHz and a voltage from 10 volts to 300 volts.

11. The method of claim 9 wherein the pulsed negative bias voltage is a square wave with a pulsing frequency of 1 kHz to 200 kHz and a voltage from 10 volts to 300 volts.

12. The method of claim 9 wherein the pulsed negative bias voltage has a pulse width of approximately 45 microseconds.

13. A sputtering system comprising:

first and second electrodes in a sputtering chamber, wherein the first and second electrodes are disposed on a first side of the sputtering chamber;

third and fourth electrodes disposed on a second side of the sputtering chamber which is parallel to the first side;

a first midfrequency power supply having a frequency of 10 kHz to 400 kHz directly connected between first and second electrodes and a second midfrequency power supply having a frequency of 10 kHz to 400 kHz directly connected between third and fourth electrodes, the first midfrequency power supply alternately drives the first electrode as an anode while driving the second electrode as a cathode then drives the second electrode as the anode while driving the first electrode as the cathode and the second midfrequency power supply alternately drives third electrode as an anode while driving the fourth electrode as a cathode then drives fourth electrode as the anode while driving the third electrode as the cathode; and

a pulsed negative voltage source electrically connected to a work piece holder to apply a pulsed negative voltage to the work piece holder contemporaneously with the first and second midfrequency power supplies driving the first, second, third and fourth electrodes;

wherein the third electrode and the first electrode are placed in a confronting position and the first and the second midfrequency power supplies are synchronized to drive the third electrode as an anode when the first electrode is being driven as a cathode.

14. The sputtering system of claim 13 further comprising first and second carbon targets mounted in electrical contact respectively with first and second electrodes.

15. The sputtering system of claim 14 further comprising means for supplying nitrogen containing gas into the sputtering chamber.

16. The sputtering system of claim 14 further comprising means for supplying hydrogen containing gas into the sputtering chamber.

17. The sputtering system of claim 13 wherein the pulsed negative voltage source has a pulsing frequency of 1 kHz to 200 kHz and a voltage from 10 volts to 300 volts.

18. The sputtering system of claim 13 wherein a substantially straight path for ions traveling between first and second electrodes is free from shields.

19. The sputtering system of claim 13 wherein the pulsed negative voltage source produces a square wave voltage function.

20. The sputtering system of claim 13 wherein the first electrode is positioned on a first side of the sputtering chamber and the second electrode is positioned on a second side of the sputtering chamber.