Method for growing nitride compound semiconductor

• US 6,339,014 B1
• Filed: 04/13/1999
• Issued: 01/15/2002
• Est. Priority Date: 04/14/1998
• Status: Expired due to Term

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Ishida, Masahiro, Yuri, Masaaki, Hashimoto, Tadao, Orita, Kenji, Imafuji, Osamu
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Dang, Phuc T.
• Application Number:
  US09/289,960
• Time in Patent Office: 1,008 Days
• Field of Search: 438/458, 438/481, 438/502, 438/503, 438/507, 438/509, 438/46, 438/479, 438/796, 437/21, 437/84, 437/86, 257/86, 257/94, 257/103, 257/607, 257/96, 257/97, 257/102
• US Class Current: 438/503
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: H01L 21/02389 Nitrides
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02543 Phosphides
• CPC Class Codes: H01L 21/02546 Arsenides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/025 Physical imperfections, e.g. particular concentration or distribution of impurities

Abstract

A method for growing a nitride compound semiconductor according to the present invention includes the step of growing a compound semiconductor expressed by a general formula Al_xGa_1-xN (where 0≦×≦1) on a nitride compound semiconductor substrate at a temperature of about 900° C. or more.

Claims

1. A method for growing a nitride compound semiconductor comprising the step of growing a compound semiconductor expressed by a general formula Al_xGa_1-xN (where 0≦

×

≦

1) on a substrate composed of a single crystalline nitride compound semiconductor at a temperature of about 900°

C. or more.

2. The method of claim 1, wherein a mobility of the nitride compound semiconductor is about 200 cm²/Vs or more.

3. The method of claim 1, wherein the thickness of the substrate is about 30 μ

m or more.

4. The method of claim 1, wherein either arsenic or a compound containing arsenic is supplied onto the substrate such that N vacancies are compensated, while the compound semiconductor is being grown on the substrate.

5. The method of claim 1, wherein either phosphorus or a compound containing phosphorus is supplied onto the substrate such that N vacancies are compensated, while the compound semiconductor is being grown on the substrate.

11. The method of claim 1, wherein the growing step is performed such that a surface roughness of the grown compound semiconductor is about 1 nm or less.

6. A method for growing a nitride compound semiconductor comprising the step of growing a compound semiconductor expressed by a general formula In_yAl_zGa_1-y-zN (where 0<

y≦

1, 0≦

z<

1 and 0≦

y+z≦

1) on a substrate composed of a single crystalline nitride compound semiconductor at a temperature of about 700°

C. or more.

7. The method of claim 6, wherein a mobility of the nitride compound semiconductor is about 200 cm²/Vs or more.

8. The method of claim 6, wherein the thickness of the substrate is about 30 μ

m or more.

9. The method of claim 6, wherein either arsenic or a compound containing arsenic is supplied onto the substrate such that N vacancies are compensated, while the compound semiconductor is being grown on the substrate.

10. The method of claim 6, wherein either phosphorus or a compound containing phosphorus is supplied onto the substrate such that N vacancies are compensated, while the compound semiconductor is being grown on the substrate.

12. The method of claim 6, wherein the growing step is performed such that a surface roughness of the grown compound semiconductor is about 1 nm or less.

13. A method for growing a nitride compound semiconductor comprising the step of growing a compound semiconductor expressed by a general formula Al_xG_1-xN (where 0≦

×

≦

1) on a nitride compound semiconductor such that a surface roughness of the grown compound semiconductor is about 1 nm or less.

14. A method for growing a nitride compound semiconductor comprising the step of growing a compound semiconductor expressed by a general formula In_yAl_zGa_1-y-zN (where 0<

y≦

1, 0≦

z<

1 and 0≦

y+z≦

1) on a nitride compound semiconductor such that a surface roughness of the grown compound semiconductor is about 1 nm or less.