Plasma emission detection during lateral processing of photoresist mask
First Claim
Patent Images
1. A method of laterally processing a photoresist mask on a substrate, which method comprises:
- depositing a photoresist layer on the substrate;
patterning the photoresist layer to form a photoresist mask having at least one element with a first prescribed width;
laterally processing the photoresist mask having the element to a second prescribed width in a plasma chamber by a plasma having at least one specie with an emission spectrum;
detecting a change in the emission spectrum of the at least one specie in the plasma while simultaneously laterally processing the photoresist mask; and
stopping the lateral processing when the detected change in the emission spectrum of the at least one specie corresponds to the second width.
1 Assignment
0 Petitions
Accused Products
Abstract
Photoresist mask width dimensions are determined by emission spectroscopy while simultaneously etching or depositing material on the sidewalls of the photoresist mask in a plasma environment. Embodiments include stopping the etching or deposition process when the detected change in the emission spectrum corresponds to a desired photoresist mask dimension.
28 Citations
20 Claims
-
1. A method of laterally processing a photoresist mask on a substrate, which method comprises:
-
depositing a photoresist layer on the substrate;
patterning the photoresist layer to form a photoresist mask having at least one element with a first prescribed width;
laterally processing the photoresist mask having the element to a second prescribed width in a plasma chamber by a plasma having at least one specie with an emission spectrum;
detecting a change in the emission spectrum of the at least one specie in the plasma while simultaneously laterally processing the photoresist mask; and
stopping the lateral processing when the detected change in the emission spectrum of the at least one specie corresponds to the second width. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A method of etching a feature on a semiconductor substrate, which method comprises:
-
forming a dielectric layer on the semiconductor substrate;
forming a conductive layer on the dielectric layer;
forming a photoresist mask having at least one element having a first prescribed width on the conductive layer;
laterally processing the photoresist mask having the element to a second prescribed width in a plasma chamber by a plasma having at least one specie with an emission spectrum;
detecting a change in the emission spectrum of the at least one specie in the plasma while simultaneously laterally processing the photoresist mask;
stopping the lateral processing when the detected change in the emission spectrum of the at least one specie corresponds to the second width; and
etching through the photoresist mask having the element with the second width to the underlying layers to form the feature. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
-
Specification