Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument

• US 6,340,606 B1
• Filed: 06/08/2000
• Issued: 01/22/2002
• Est. Priority Date: 03/27/1998
• Status: Expired due to Term

• Current Assignee: Advanced Interconnect Systems Limited (Vector Capital Corporation)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Hashimoto, Nobuaki
• Primary Examiner(s): Bowers, Charles
• Assistant Examiner(s): LEE, HSIEN MING
• Application Number:
  US09/589,353
• Time in Patent Office: 593 Days
• Field of Search: 438/15, 438/110, 438/123, 438/125, 438/618, 438/666, 438/106, 438/108, 257/778, 257/780, 257/786, 257/730, 361/772, 361/774, 361/779, 361/760
• US Class Current: 438/106
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05099 Material
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/1329 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/133 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16237 the bump connector connecting to a bonding area disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 : the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73203 : Bump and layer connectors
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/81801 : Soldering or alloying
• CPC Class Codes: H01L 2224/83102 : using surface energy, e.g. capillary forces
• CPC Class Codes: H01L 2224/83192 : wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83194 : Lateral distribution of the layer connectors
• CPC Class Codes: H01L 2224/8385 : using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/85399 : Material
• CPC Class Codes: H01L 2224/92125 : the second connecting process involving a layer connector
• CPC Class Codes: H01L 23/13 : characterised by the shape
• CPC Class Codes: H01L 23/16 : Fillings or auxiliary members in containers or encapsulations, e.g. centering rings H01L23/42, H01L23/552 take precedence
• CPC Class Codes: H01L 23/24 : solid or gel at the normal operating temperature of the device H01L23/3135 takes precedence
• CPC Class Codes: H01L 23/3114 : the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/49816 : Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 23/49827 : Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/562 : Protection against mechanical damage H01L23/02, H01L23/28 take precedence
• CPC Class Codes: H01L 24/10 : Bump connectors bumps on insulating substrates, e.g. chip carriers, H01L23/49816; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/07811 : Extrinsic, i.e. with electrical conductive fillers
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/15151 : the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
• CPC Class Codes: H01L 2924/15183 : in a single layer of the multilayer substrate
• CPC Class Codes: H01L 2924/15184 : in different layers of the multilayer substrate
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H05K 1/112 : directly combined with via connections
• CPC Class Codes: H05K 2201/0305 : Solder used for other purposes than connections between PCB or components, e.g. for filling vias or for programmable patterns
• CPC Class Codes: H05K 2201/0394 : Conductor crossing over a hole in the substrate or a gap between two separate substrate parts
• CPC Class Codes: H05K 3/3457 : Solder materials or compositions; Methods of application thereof
• CPC Class Codes: H05K 3/386 : by the use of an organic polymeric bonding layer, e.g. adhesive
• CPC Class Codes: H05K 3/4038 : Through-connections; Vertical interconnect access [VIA] connections H05K3/403, H05K3/42 take precedence

Abstract

The semiconductor device comprises an insulating film in which penetrating holes are formed, a semiconductor chip having electrodes, a wiring pattern adhered by an adhesive over a region including penetrating holes on one side of the insulating film and electrically connected to the electrodes of the semiconductor chip, and external electrodes provided on the wiring pattern through the penetrating holes and projecting from the surface opposite to the surface of the substrate on which the wiring pattern is formed. Part of the adhesive is drawn in to be interposed between the penetrating holes and external electrodes.

Claims

1. A method of manufacturing a semiconductor device, comprising:

a step of providing a substrate with an adhesive material provided on one surface thereof;

a step of carrying out punching from the side of said substrate on which said adhesive material is provided, and in the direction of the opposite side thereof, whereby penetrating holes are formed and a part of said adhesive material is drawn into said penetrating holes;

a step of adhering a conductive member over a particular region on said one surface including said penetrating holes on said substrate through said adhesive material;

a step of providing a material for forming external electrodes on said conductive member, and forming external electrodes through said penetrating holes and the inner side of said part of adhesive material drawn into the penetrating holes to project from the surface opposite to the surface of said substrate on which said conductive member is formed; and

a step of electrically connecting electrodes of a semiconductor chip to said conductive member.

2. The method of manufacturing a semiconductor device as defined in claim 1,

wherein each of said external electrodes includes a base portion positioned within each of said penetrating holes and a projecting portion projecting from each of said penetrating holes, the diameter d of said base portion being related to the diameter φ of said projecting portion by φ

≦

d.

3. The method of manufacturing a semiconductor device as defined in claim 1,

wherein said substrate is either of an insulating film and a printed substrate.

4. The method of manufacturing a semiconductor device as defined in claim 1, wherein said material for forming external electrodes is solder.

5. The method of manufacturing a semiconductor device as defined in claim 1, further comprising:

a step of punching said substrate around said semiconductor chip, after the step of electrically connecting electrodes of said semiconductor chip to said conductive member.

6. The method of manufacturing a semiconductor device as defined in claim 1,

wherein in the step of electrically connecting said electrodes of said semiconductor chip to said conductive member, said electrodes are connected to said conductive member through an anisotropic conductive material having conductive particles dispersed in an adhesive.

7. The method of manufacturing a semiconductor device as defined in claim 1,

wherein in the step of electrically connecting said electrodes of said semiconductor chip to said conductive member, said electrodes are connected to said conductive member through wires.

8. A method of manufacturing a semiconductor device, comprising:

a step of providing a substrate of a material of a higher elasticity than external electrodes, having penetrating holes in which the internal wall surfaces have protrusions, and having a conductive member directly formed over a region including said penetrating holes;

a step of providing a material for forming external electrodes on said conductive member, and forming external electrodes through said penetrating holes to project from the surface opposite to the surface of said substrate on which said conductive member is formed; and

a step of electrically connecting electrodes of a semiconductor chip to said conductive member.

9. The method of manufacturing a semiconductor device as defined in claim 8, further comprising:

a step of punching said substrate before said conductive member is formed, wherein a part of said substrate is drawn into said penetrating holes and said protrusions are formed.

10. The method of manufacturing a semiconductor device as defined in claim 8,

wherein said penetrating holes are formed by a laser.

11. The method of manufacturing a semiconductor device as defined in claim 8,

wherein said penetrating holes are formed by wet etching.

12. The method of manufacturing a semiconductor device as defined in claim 8,

wherein each of said external electrodes includes a base portion positioned within each of said penetrating holes and a projecting portion projecting from each of said penetrating holes, the diameter d of said base portion being related to the diameter φ

of said projecting portion by φ

≦

d.

13. The method of manufacturing a semiconductor device as defined in claim 8,

wherein said substrate is either of an insulating film and a printed substrate.

14. The method of manufacturing a semiconductor device as defined in claim 8, wherein said material for forming external electrodes is solder.

15. The method of manufacturing a semiconductor device as defined in claim 8, further comprising:

a step of punching said substrate around said semiconductor chip, after the step of electrically connecting electrodes of said semiconductor chip to said conductive member.

16. The method of manufacturing a semiconductor device as defined in claim 8,

wherein in the step of electrically connecting said electrodes of said semiconductor chip to said conductive member, said electrodes are connected to said conductive member through an anisotropic conductive material having conductive particles dispersed in an adhesive.

17. The method of manufacturing a semiconductor device as defined in claim 8,

wherein in the step of electrically connecting said electrodes of said semiconductor chip to said conductive member, said electrodes are connected to said conductive member through wires.

18. A method of manufacturing a semiconductor device, comprising:

a step of providing a substrate in which penetrating holes are formed and a conductive member is formed over a region including said penetrating holes;

a step of providing a material for forming external electrodes on said conductive member, and forming external electrodes through said penetrating holes to project from the surface opposite to the surface of said substrate on which said conductive member is formed; and

a step of electrically connecting electrodes of a semiconductor chip to said conductive member;

wherein each of said external electrodes includes a base portion positioned within each of said penetrating holes and a projecting portion projecting from each of said penetrating holes, the diameter d of said base portion being related to the diameter φ

of said projecting portion by φ

≦

d.

19. The method of manufacturing a semiconductor device as defined in claim 18, wherein said material for forming external electrodes is solder.

20. The method of manufacturing a semiconductor device as defined in claim 18, further comprising:

a step of punching said substrate around said semiconductor chip, after the step of electrically connecting electrodes of said semiconductor chip to said conductive member.

21. The method of manufacturing a semiconductor device as defined in claim 18,

wherein in the step of electrically connecting said electrodes of said semiconductor chip to said conductive member, said electrodes are connected to said conductive member through an anisotropic conductive material having conductive particles dispersed in an adhesive.

22. The method of manufacturing a semiconductor device as defined in claim 18,

wherein in the step of electrically connecting said electrodes of said semiconductor chip to said conductive member, said electrodes are connected to said conductive member through wires.