Multilayer photovoltaic or photoconductive devices

• US 6,340,789 B1
• Filed: 09/15/2000
• Issued: 01/22/2002
• Est. Priority Date: 03/20/1998
• Status: Expired due to Term

• Current Assignee: IPIFS Guarantee Corp.
• Original Assignee: Cambridge Display Technology Limited (Sumitomo Chemical Company Limited)
• Inventors: Petritsch, Klaus, Granstrom, Magnus
• Primary Examiner(s): DIAMOND, ALAN D
• Application Number:
  US09/646,325
• Time in Patent Office: 494 Days
• Field of Search: 136/255, 136/263, 136/261, 136/256, 257/40, 257/431, 257/458, 438/82, 438/89, 438/57, 438/99
• US Class Current: 136/263
• CPC Class Codes: H10K 30/20 comprising organic-organic junctions, e.g. donor-acceptor junctions
• CPC Class Codes: H10K 30/30 comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
• CPC Class Codes: H10K 30/50 Photovoltaic [PV] devices
• CPC Class Codes: H10K 71/50 Forming devices by joining two substrates together, e.g. lamination techniques
• CPC Class Codes: H10K 85/113 Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
• CPC Class Codes: H10K 85/114 Poly-phenylenevinylene; Derivatives thereof
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention concerns optically absorptive photonic devices and in particular photovoltaic and photoconductive devices. It is particularly concerned with devices formed from multiple semiconducting layers, e.g., organic semiconducting polymers. Such a device has two central semiconductive layers which have been laminated together so as to form a mixed layer between the first and second semiconductive layers, while retaining at least some of the first and second semiconductive layers on either side of the mixed layer.

Claims

1. A method of forming a photovoltaic or photoconducting device comprising the laminating together of a first component having a first electrode and a first semiconductive layer predominantly comprising a first semiconductive material, and a second component having a second electrode and a second semiconductive layer predominantly comprising a second semiconductive material, wherein the laminating step involves the controlled joining of said first semiconductive layer and said second semiconductive layer to form a mixed layer comprising proportionally less of said first semiconductive material than said first semiconductive layer and proportionally less of said second semiconductive material than said second semiconductive layer while retaining said first and second semiconductive layers with a reduced thickness.

2. A method as claimed in claim 1, wherein the laminating step comprises the application of pressure and/or heat.

3. A method according to claim 2, wherein said application of heat comprises heating at least one of said first and second semiconductive layers above their glass transition temperature.

4. A method as claimed in claim 1, wherein the laminating step further comprises annealing.

5. A method as claimed in claim 1, further comprising the treatment of at least one of said first or second semiconductive layers before lamination by organic or inorganic doping.

6. A method according to claim 1, further comprising, before said lamination step, the treatment of at least one of said first or second semiconductive layers to vary their light-absorption characteristics and/or transport and injection properties.

7. A method as claimed in claim 1, wherein the first and second semiconductive layers are deposited by spin-coating and the thickness of said first semiconductive layer and the thickness of said second semiconductive layer are controlled by varying a rotation speed at which the spin-coating occurs.

8. A method as claimed in claim 1, wherein said first component is self-supporting and comprises first semiconductive material over a self-supporting substrate carrying or comprising the first electrode.

9. A method as claimed in claim 1, wherein said second component is self-supporting and comprises second semiconductive material over a self-supporting substrate carrying or comprising the second electrode.

10. A method as claimed in claim 1 wherein at least one of the components is flexible and stored as a roll and supplied therefrom for the laminating step.

11. A photovoltaic or photoconducting device comprising:

a first electrode;

a first semiconductive layer, predominantly comprising a first organic semiconductive material, over at least part of said first eletrode;

a mixed layer over said first semiconductive layer;

a second semiconductive layer, predominantly comprising a second organic semiconductive material, over said mixed layer; and

a second electrode over at least part of said second semiconductive layer, wherein said mixed layer is connected with the first and second semiconductive layers and comprises a mixture of said first and second semiconductive material having proportionally less of said first semiconductive material than said first semiconductive layer and proportionally less of said second semiconductive material than said second semiconductive layer.

12. A photovoltaic or photoconducting device as claimed in claim 11, wherein a first substrate carries or comprises said first electrode and a second substrate carries or comprises said second electrode.

13. A photovoltaic or photoconducting device as claimed in claim 12, wherein said first and second substrates are self-supporting.

14. A device as claimed in claim 12, wherein at least one of said first and second substrates is flexible.

15. A device as claimed in claim 12, wherein the first or/and second electrode itself forms the first or/and second substrates respectively.

16. A device as claimed in claim 15, wherein one of the substrates is a metal foil.

17. A device as claimed in claim 14, wherein the first and/or second substrate is arranged for the transmission of light.

18. A device as claimed in claim 13, wherein at least one of said first semiconductive material and said second semiconductive material comprise a mixture of component materials.

19. A device as claimed in claim 13, wherein at least one of said first semiconductive material and said second semiconductive material comprise a single component material.

20. A device as claimed in claim 13, wherein said first and second semiconductive materials are respectively hole acceptors and electron acceptors.

21. A device as claimed in claim 13, wherein at least one of said first and said second semiconductive materials comprises a semiconductive polymer.

22. A device as claimed in claim 21, wherein at least one of said first and second semiconductive materials comprises a conjugated polymer.

23. A device as claimed in claim 22 wherein at least one of the conjugated polymers is selected from the group consisting of:

poly(phenylene) and derivatives thereof, poly(phenylene vinylene) and derivatives thereof, poly(thiophene) and derivatives thereof, poly(thienylenevinylene) and derivatives thereof and poly(isothianaphthene) and derivatives thereof.

24. A device as claimed in claim 21, wherein at least one of the polymers is a poly(squaraine) or a derivative thereof.

25. A device as claimed in claim 21, wherein at least one of the polymers is a polymer containing perylene units.

26. A device as claimed in claim 13, wherein at least one of the semiconductive materials comprises an organic pigment or dye.

27. A device as claimed in claim 21, wherein at least one of the semiconductive materials comprises an organometallic polymer.

28. A device as claimed in claim 11 wherein at least one of the semiconductive materials comprises material selected from the group consisting of phthalocyanines, perylenes, naphthalocyanines, squaraines, merocyanines and their respective derivatives.

29. A device as claimed in claim 13, wherein at least one of the semiconductive materials comprises an azo-dye consisting of azo chromofore (—

N═

N—

) linking aromatic groups.

30. A device as claimed in claim 11, wherein at least one of the semiconductive materials further comprises a poly(silane), or poly(germanate).

31. A device as claimed in claim 13, wherein the first or/and the second semiconductive material is doped with organic or inorganic dopants.

32. A device as claimed in any one of claim 13, wherein the first semiconductive material comprises POPT and said second semiconductive material comprises MCP.

33. A device as claimed in claim 13, wherein said first semiconductive material comprises P3HT and said second semiconductive material comprises MCP.

34. A device as claimed in claim 13, wherein said mixed layer is an interpenetrating network of said first and second semiconductive materials.

35. A device as claimed in claim 11 wherein said first semiconductive layer is more than 80% by weight said first semiconductive material.

36. A device as claimed in claim 35, wherein said first semiconductive layer is a homolayer of said first semiconductive material.

37. A device as claimed in claim 35, wherein said first semiconductive layer also contains said second semiconductive material.

38. A device as claimed in claim 11 wherein said second semiconductive layer is more than 80% by weight said second semiconductive material.

39. A device as claimed in claim 38, wherein said second semiconductive layer is a homolayer of said second semiconductive material.

40. A device as claimed in claim 38, wherein said second semiconductive layer also contains said first semiconductive material.

41. A device as claimed in claim 13, wherein one or a plurality of layers is between said first electrode and said first semiconductive layer.

42. A device as claimed in claim 13, wherein said first electrode is in physical contact with said first semiconductive layer.

43. A device as claimed in claim 13, wherein one or a plurality of layers is between said second electrode and said second semiconductive layer.

44. A device as claimed in claim 13, wherein said second electrode is in physical contact with said second semiconductive layer.

45. A device as claimed in claim 13, wherein said first electrode has a higher work function than said second electrode.

46. A device as claimed in claim 11 wherein said first electrode comprises indium tin oxide and said second electrode comprises aluminum.

47. A decice as claimed in claim 13, wherein first and second electrodes have substantially the same work function.