Article comprising vertically nano-interconnected circuit devices and method for making the same

• US 6,340,822 B1
• Filed: 10/05/1999
• Issued: 01/22/2002
• Est. Priority Date: 10/05/1999
• Status: Expired due to Term

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: Agere Systems Guardian Corp. (Broadcom, Inc.)
• Inventors: Brown, Walter L., Jin, Sungho, Zhu, Wei
• Primary Examiner(s): Meier, Stephen D.
• Application Number:
  US09/426,457
• Time in Patent Office: 840 Days
• Field of Search: 257/23, 257/24, 257/27, 257/777, 257/25
• US Class Current: 257/25
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H01L 21/76885 By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
• CPC Class Codes: H01L 2224/11003 for holding or transferring the bump preform
• CPC Class Codes: H01L 2224/111 Manufacture and pre-treatment of the bump connector preform
• CPC Class Codes: H01L 2224/11334 using preformed bumps
• CPC Class Codes: H01L 2224/13193 with a principal constituent of the material being a solid not provided for in groups H01L2224/131 - H01L2224/13191, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
• CPC Class Codes: H01L 23/49811 Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/53276 containing carbon, e.g. fullerenes superconducting fullerenes H10N60/853
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 of an individual bump connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01011 Sodium [Na]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01022 Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01027 Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H10K 10/701 : Organic molecular electronic devices
• CPC Class Codes: Y10S 438/962 : Quantum dots and lines
• CPC Class Codes: Y10S 977/762 : Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
• CPC Class Codes: Y10S 977/848 : Tube end modifications, e.g. capping, joining, splicing

Abstract

A circuit device is disclosed comprising at least two circuit layers or circuit devices vertically interconnected with a plurality of parallel and substantially equi-length nanowires disposed therebetween. The nanowires may comprise composites, e.g., having a heterojunction present along the length thereof, to provide for a variety of device applications. Also disclosed is a method for making the circuit device comprising growing a plurality of nanowires on a dissolvable or removable substrate, equalizing the length of the nanowires (e.g., so that each one of the plurality of nanowires is substantially equal in length), transferring and bonding exposed ends of the plurality of nanowires to a first circuit layer; and removing the dissolvable substrate. The nanowires attached to the first circuit layer then can be further bonded to a second circuit layer to provide the vertically interconnected circuit device.

Claims

1. An article having a circuit device comprising at least two circuit layers and a plurality of substantially parallel and equi-length nanowires perpendicularly disposed and electrically interconnecting the at least two circuit layers, wherein each one of the plurality of nanowires has a diameter of less than 500 nm and is bonded to at least one of the two circuit layers by metallic solder bonding.

2. The article of claim 1 in which the plurality of nanowires exhibit mechanical compliancy for avoiding reliability problems associated with external stresses.

3. The article of claim 1 in which the plurality of nanowires are selected from carbon nanotubes, semiconductor nanowires, and nanowires fabricated with at least one of metals, alloys, oxides, carbides, nitrides, borides, or mixed ceramics.

4. The article of claim 1 in which the length of any one of the nanowires deviates from the average length of all the plurality of nanowires by less than twenty percent.

5. The article of claim 1 in which at least one of the plurality of nanowires comprises a composite nanowire having a heterojunction present along the length thereof.

6. The article of claim 1 in which each one of the plurality of nanowires is substantially vertically aligned.