Capacitor with multiple-component dielectric and method of fabricating same

• US 6,341,056 B1
• Filed: 05/17/2000
• Issued: 01/22/2002
• Est. Priority Date: 05/17/2000
• Status: Expired due to Term

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global)), Samsung Fine Chemicals Company Limited (Lotte Chemical Corporation)
• Original Assignee: LSI Logic Corporation (Broadcom, Inc.)
• Inventors: Bystedt, Brian, Allman, Derryl D. J.
• Primary Examiner(s): Dinkins, Anthony
• Application Number:
  US09/573,123
• Time in Patent Office: 615 Days
• Field of Search: 361/311, 361/312, 361/313, 361/306.3, 361/321.2, 257/295, 257/296, 257/532, 257/303, 257/306, 257/310
• US Class Current: 361/312
• CPC Class Codes: H01G 4/20 using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06 H01G4/12 takes precedence

Abstract

A capacitor has a pair of plates separated by a capacitor dielectric material which is formed of multiple separate layers of different dielectric materials having different electrical characteristics. The different electrical characteristics are represented by linearity curves that curve relatively oppositely with respect to one another. Combining the different dielectric materials and separate layers achieves selected electrical characteristics from the overall capacitor dielectric material. The capacitor dielectric material may be formed with a top layer, a middle layer and a bottom layer. The middle layer may be formed of relatively high leakage dielectric and/or relatively high dielectric constant material, and the top and bottom layers may be formed of barrier material which is substantially resistant to leakage current and which exhibits a relatively lower dielectric constant.

Claims

1. A capacitor having a pair of plates separated by a capacitor dielectric material formed of multiple separate layers of at least two different dielectric materials which have electrical characteristic curves that curve in opposite directions with respect to one another, and a relative thickness of each of the layers being related to a relative extent of a curvature of the electrical characteristic curve of each material.

2. A capacitor as defined in claim 1 wherein the electrical characteristic curves of the two dielectric materials are each nonlinear.

3. A capacitor as defined in claim 1 wherein each of the the at least two dielectric materials is formed in a separate layer.

4. A capacitor as defined in claim 1 wherein the relative thickness of each of the layers is selected to create an overall substantially-linear electrical characteristic of the capacitor dielectric material.

5. A capacitor as defined in claim 1 wherein the dielectric material of one layer is substantially silicon nitride and the dielectric material of another layer is substantially silicon dioxide.

6. A capacitor as defined in claim 1 wherein the capacitor dielectric material comprises a top layer, a middle layer and a bottom layer, the middle layer comprising material having a relatively higher dielectric constant, and the top and bottom layers comprising material having a relatively lower dielectric constant.

7. A capacitor as defined in claim 6 wherein the top and bottom layers comprise substantially the same material.

8. A capacitor as defined in claim 6 wherein the top and bottom layers comprise different material.

9. A capacitor as defined in claim 6 wherein the middle layer comprises substantially one of tantalum pentoxide, piezoelectric material, oxynitrided material, Indium tin oxide or metal organic oxides.

10. A capacitor as defined in claim 9 wherein at least one of the top and bottom layers comprises substantially silicon nitride.

11. A capacitor comprising a pair of plates separated by a capacitor dielectric material formed of multiple separate layers of different dielectric materials which have different electrical linearity characteristics, the capacitor dielectric material comprising a top layer, a middle layer and a bottom layer, the middle layer comprising a substantially high leakage dielectric material, and the top and bottom layers comprising barrier material which is substantially resistant to leakage current.

12. A capacitor as defined in claim 11 wherein the top and bottom layers adjoin the middle layer on opposite sides of the middle layer.

13. A capacitor as defined in claim 11 wherein the middle layer comprises a material with a substantially higher dielectric constant than the dielectric constant of the material of the top and bottom layers.

14. A method of fabricating a capacitor having a pair of plates separated by a capacitor dielectric material, comprising the steps of:

forming the capacitor dielectric material between the plates in multiple separate layers of different dielectric materials, the multiple separate layers including a top layer, a middle layer and a bottom layer;

selecting the dielectric material of one of the layers to have different electrical characteristics than the dielectric material of another one of the layers;

forming the middle layer of dielectric material having a substantially high leakage current electrical characteristic; and

forming the top and bottom layers of dielectric material having an electrical characteristic of substantial resistance to leakage current.

15. A method as defined in claim 14 further comprising the step of:

selecting the material of the middle layer to have a substantially higher dielectric constant than a dielectric constant of the material of the top and bottom layers.

16. A method of fabricating a capacitor having a pair of plates separated by a capacitor dielectric material, comprising the steps of:

forming the capacitor dielectric material between the plates in multiple separate layers of different dielectric materials;

selecting the dielectric material of a first one of the layers to have a first electrical characteristic curve having a first curvature;

selecting the dielectric material of a second one of the layers to have a second electrical characteristic curve having a second curvature different from the first curvature; and

forming the first and second layers to first and second predetermined thicknesses, respectively, related to a relative extent of the first and second curvatures, respectively.

17. A method as defined in claim 16 further comprising the step of:

selecting the dielectric materials for the first and second layers to have the first and second electrical characteristic curves curve in opposition with respect to one another.

18. A method as defined in claim 16 wherein the first and second electrical characteristic curves are nonlinear.

19. A method as defined in claim 16 further comprising the steps of:

forming the capacitor dielectric material to include a top layer, a middle layer and a bottom layer;

forming the middle layer of a relatively higher dielectric constant material; and

forming the top and bottom layers of a relatively lower dielectric constant material.

20. A method as defined in claim 19 wherein the material of the middle layer comprises substantially one of tantalum pentoxide, piezoelectric material, oxynitrided material, Indium tin oxide or metal organicoxides.

21. A method as defined in claim 20 wherein at least one of the top and bottom layers comprises substantially silicon nitride.