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Sequential chemical vapor deposition

  • US 6,342,277 B1
  • Filed: 04/14/1999
  • Issued: 01/29/2002
  • Est. Priority Date: 08/16/1996
  • Status: Expired due to Term
First Claim
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1. A process of growing a thin film by a sequential chemical vapor deposition process including a plurality of cycles, wherein at least one cycle comprises:

  • placing a part in a chamber, wherein the part comprises a semiconductor substrate having at least one opening therein and the film coats walls defining the opening;

    exposing the part to a gaseous first reactant, including an element of the thin film to be formed, wherein at least a portion of the first reactant adsorbs on the part;

    purging the chamber of the gaseous first reactant;

    converting the portion of the first reactant adsorbed on the part to either an element or compound by exposing the part to a gaseous second reactant that includes radicals created by a plasma discharge, whereby a thin film is formed; and

    purging the chamber of the gaseous second reactant;

    wherein the first reactant comprises a molecule containing a metal atom and converting comprises reducing the portion of the first reactant adsorbed on the part to metal; and

    wherein reducing the portion of the first reactant adsorbed on the part to metal comprises;

    first reducing the portion of the first reactant adsorbed on the part to an initial metal oxide; and

    second reducing the initial metal oxide to metal by exposure to hydrogen radicals.

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