Group III nitride compound semiconductor device and method for producing

• US 6,342,404 B1
• Filed: 03/10/2000
• Issued: 01/29/2002
• Est. Priority Date: 03/31/1999
• Status: Active Grant

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Chiyo, Toshiaki, Shibata, Naoki, Ito, Jun, Watanabe, Hiroshi, Asami, Shizuyo, Asami, Shinya
• Primary Examiner(s): Pham, Long
• Application Number:
  US09/522,833
• Time in Patent Office: 690 Days
• Field of Search: 438/46, 438/22, 438/44
• US Class Current: 438/46
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 33/007 comprising nitride compounds

Abstract

A group III nitride compound semiconductor device is produced according to the following manner. A separation layer made of a material which prevents group III nitride compound semiconductors from being grown thereon is formed on a substrate. Group III nitride compound semiconductors is grown on a surface of the substrate uncovered with the separation layer while keeping the uncovered substrate surface separated by the separation layer.

Claims

1. A method for producing a group III nitride compound semiconductor device, comprising, in order:

forming a second environment division on a surface of a substrate;

forming a mask on a surface of a first portion of the second environment division;

removing a second portion of the second environment division on which the mask is not formed to thereby form a first environment division in an area in which the mask is not formed;

removing the mask; and

laminating a plurality of group III nitride compound semiconductor layers for constituting a device on said first environment division.

2. A producing method according to claim 1, wherein said first environment division is in a state in which said substrate surface is exposed.

3. A producing method according to claim 2, wherein said second environment division is made of a material which prevents said group III nitride compound semiconductors from being grown on said material.

4. A producing method according to claim 2, wherein a second group III nitride compound semiconductor layer, which is amorphous or different in crystallinity from said group III nitride compound semiconductor layers grown on said first environment division, is grown on said second environment division.

5. A method according to claim 1, further comprising forming a groove on the surface of said substrate to thereby form said second environment division in said groove.