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Method for forming micro cavity

  • US 6,342,427 B1
  • Filed: 12/29/1999
  • Issued: 01/29/2002
  • Est. Priority Date: 12/02/1999
  • Status: Expired due to Term
First Claim
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1. A method for forming a micro cavity, comprising the steps of:

  • forming a first layer on a silicon layer;

    forming a trench in said silicon layer by selectively etching said silicon layer by using said first layer as an etching mask;

    forming a second layer on said trench and on said silicon layer;

    forming a third layer on said second layer;

    forming a plurality of etching holes through said third layer by partially etching said third layer;

    removing said second layer through said etching holes; and

    forming a cavity between said silicon layer and said third layer, wherein said trench has a plurality of lines and a plurality of spaces alternatively repeated and is formed perpendicular to a surface of the silicon layer.

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