Method for forming micro cavity

• US 6,342,427 B1
• Filed: 12/29/1999
• Issued: 01/29/2002
• Est. Priority Date: 12/02/1999
• Status: Expired due to Term

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Choi, Chang Auck, Kim, Yun Tae, Jun, Chi Hoon, Jang, Won Ick
• Primary Examiner(s): Mills, Gregory
• Assistant Examiner(s): HASSANZADEH, PARVIZ
• Application Number:
  US09/473,968
• Time in Patent Office: 762 Days
• Field of Search: 438/422, 438/212, 438/421, 438/400, 216/2, 216/41
• US Class Current: 438/422
• CPC Class Codes: B81B 2203/033 Trenches
• CPC Class Codes: B81C 1/00047 Cavities
• CPC Class Codes: B81C 2201/0133 Wet etching
• CPC Class Codes: B81C 2201/0178 Oxidation
• CPC Class Codes: B81C 2203/0136 Growing or depositing of a covering layer

Abstract

A method for forming a micro cavity is disclosed. In the method for forming the cavity, a first layer is formed on a silicon layer and a trench is formed in the silicon layer by selectively etching the silicon layer. A second and a third layers are formed on the trench and on the silicon layer. Etching holes are formed through the third layer by partially etching the third layer. A cavity is formed between the silicon layer and the third layer after the second layer is removed through the etching holes. Therefore, the cavity having a large size can be easily formed and sealed in the silicon layer by utilizing the volume expansion of the silicon or the poly silicon layer. Also, a vacuum micro cavity can be formed according as a low vacuum CVD oxide layer or a nitride layer formed on the etching holes which are partially opened after the thermal oxidation process by controlling the size of the etching holes concerning the other portion of the poly silicon layer.

Claims

1. A method for forming a micro cavity, comprising the steps of:

forming a first layer on a silicon layer;

forming a trench in said silicon layer by selectively etching said silicon layer by using said first layer as an etching mask;

forming a second layer on said trench and on said silicon layer;

forming a third layer on said second layer;

forming a plurality of etching holes through said third layer by partially etching said third layer;

removing said second layer through said etching holes; and

forming a cavity between said silicon layer and said third layer, wherein said trench has a plurality of lines and a plurality of spaces alternatively repeated and is formed perpendicular to a surface of the silicon layer.

2. The method for forming a micro cavity as claimed in claim 1, wherein said first layer has a different etch selectivity from said silicon layer.

3. The method for forming a micro cavity as claimed in claim 2, wherein said first layer is composed of a silicon oxide deposited by a low pressure chemical vapor deposition method.

4. The method for forming a micro cavity as claimed in claim 1, wherein a thickness of said second layer is more than a half of a width of the line.

5. The method for forming a micro cavity as claimed in claim 1, wherein a ratio of widths of the lines and the spaces is about 0.7˜

1.0;

1.0˜

1.3.

6. The method for forming a micro cavity as claimed in claim 1, wherein said second layer has a different etch selectivity from said silicon layer.

7. The method for forming a micro cavity as claimed in claim 6, wherein said second layer is composed of a silicon oxide formed by a thermal oxidation method at a temperature of between about 950°

C. and about 1100°

C.

8. The method for forming a micro cavity as claimed in claim 1, wherein the step for forming said third layer is performed after a portion of said second layer formed on said silicon layer is removed by using a 6:

1 buffered hydrogen fluoride solution as an etchant.

9. The method for forming a micro cavity as claimed in claim 1, wherein said third layer has a different etch selectivity from said second layer and the silicon layer.

10. The method for forming a micro cavity as claimed in claim 9, wherein said third layer is composed of a poly silicon deposited by a low pressure chemical vapor deposition method at a temperature of about between about 600°

C. and about 650°

C.

11. The method for forming a micro cavity as claimed in claim 1, wherein said etching holes have hexagonal shapes or circular shapes.

12. The method for forming a micro cavity as claimed in claim 1, wherein said second layer is removed by a wet etch method and by using a hydrogen fluoride solution as an etchant.

13. The method for forming a micro cavity as claimed in claim 1, further comprising the step of closing said etching holes by thermally oxidizing said third layer.

14. The method for forming a micro cavity as claimed in claim 1, further comprising the step of partially closing said etching holes by thermally oxidizing said third layer.

15. The method for forming a micro cavity as claimed in claim 14, further comprising the step of vacuumizing said cavity by depositing an oxide layer or a nitride layer on said third layer by a chemical vapor deposition method under a low vacuum atmosphere.

16. A method for forming a micro cavity, comprising the steps of:

forming a first layer on a silicon layer;

forming a trench in said silicon layer by selectively etching said silicon layer by using said first layer as an etching mask;

forming a second layer on said trench and on said silicon layer;

forming a third layer on said second layer;

forming a plurality of etching holes through said third layer by partially etching said third layer;

removing said second layer through said etching holes; and

forming a cavity between said silicon layer and said third layer by thermally treating said third layer to close said etching holes, wherein said trench has a plurality of lines and a plurality of spaces alternatively repeated and is formed perpendicular to a surface of the silicon layer.

17. The method for forming a micro cavity as claimed in claim 16, wherein a ratio of widths of the lines and the spaces is about 0.9:

1.1.

18. A method for forming a micro cavity, comprising the steps of:

forming a first layer on a silicon layer;

forming a trench in said silicon layer by selectively etching said silicon layer by using said first layer as an etching mask;

forming a second layer on said trench and on said silicon layer;

forming a third layer on said second layer;

forming a plurality of etching holes through said third layer by partially etching said third layer;

removing said second layer through said etching holes; and

partially closing said etching holes by thermally treating said third layer; and

forming a vacuum cavity between said silicon layer and said third layer, wherein said trench has a plurality of lines and a plurality of spaces alternatively repeated and is formed perpendicular to a surface of the silicon layer.

19. The method for forming a micro cavity as claimed in claim 18, wherein the step of forming said vacuum cavity comprises the step of depositing an oxide layer or a nitride layer on said third layer by a chemical vapor deposition method under a low vacuum atmosphere.