Method for forming micro cavity
First Claim
1. A method for forming a micro cavity, comprising the steps of:
- forming a first layer on a silicon layer;
forming a trench in said silicon layer by selectively etching said silicon layer by using said first layer as an etching mask;
forming a second layer on said trench and on said silicon layer;
forming a third layer on said second layer;
forming a plurality of etching holes through said third layer by partially etching said third layer;
removing said second layer through said etching holes; and
forming a cavity between said silicon layer and said third layer, wherein said trench has a plurality of lines and a plurality of spaces alternatively repeated and is formed perpendicular to a surface of the silicon layer.
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Accused Products
Abstract
A method for forming a micro cavity is disclosed. In the method for forming the cavity, a first layer is formed on a silicon layer and a trench is formed in the silicon layer by selectively etching the silicon layer. A second and a third layers are formed on the trench and on the silicon layer. Etching holes are formed through the third layer by partially etching the third layer. A cavity is formed between the silicon layer and the third layer after the second layer is removed through the etching holes. Therefore, the cavity having a large size can be easily formed and sealed in the silicon layer by utilizing the volume expansion of the silicon or the poly silicon layer. Also, a vacuum micro cavity can be formed according as a low vacuum CVD oxide layer or a nitride layer formed on the etching holes which are partially opened after the thermal oxidation process by controlling the size of the etching holes concerning the other portion of the poly silicon layer.
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Citations
19 Claims
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1. A method for forming a micro cavity, comprising the steps of:
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forming a first layer on a silicon layer;
forming a trench in said silicon layer by selectively etching said silicon layer by using said first layer as an etching mask;
forming a second layer on said trench and on said silicon layer;
forming a third layer on said second layer;
forming a plurality of etching holes through said third layer by partially etching said third layer;
removing said second layer through said etching holes; and
forming a cavity between said silicon layer and said third layer, wherein said trench has a plurality of lines and a plurality of spaces alternatively repeated and is formed perpendicular to a surface of the silicon layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for forming a micro cavity, comprising the steps of:
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forming a first layer on a silicon layer;
forming a trench in said silicon layer by selectively etching said silicon layer by using said first layer as an etching mask;
forming a second layer on said trench and on said silicon layer;
forming a third layer on said second layer;
forming a plurality of etching holes through said third layer by partially etching said third layer;
removing said second layer through said etching holes; and
forming a cavity between said silicon layer and said third layer by thermally treating said third layer to close said etching holes, wherein said trench has a plurality of lines and a plurality of spaces alternatively repeated and is formed perpendicular to a surface of the silicon layer. - View Dependent Claims (17)
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18. A method for forming a micro cavity, comprising the steps of:
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forming a first layer on a silicon layer;
forming a trench in said silicon layer by selectively etching said silicon layer by using said first layer as an etching mask;
forming a second layer on said trench and on said silicon layer;
forming a third layer on said second layer;
forming a plurality of etching holes through said third layer by partially etching said third layer;
removing said second layer through said etching holes; and
partially closing said etching holes by thermally treating said third layer; and
forming a vacuum cavity between said silicon layer and said third layer, wherein said trench has a plurality of lines and a plurality of spaces alternatively repeated and is formed perpendicular to a surface of the silicon layer. - View Dependent Claims (19)
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Specification