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Reduced electromigration and stressed induced migration of Cu wires by surface coating

  • US 6,342,733 B1
  • Filed: 07/27/1999
  • Issued: 01/29/2002
  • Est. Priority Date: 07/27/1999
  • Status: Expired due to Term
First Claim
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1. A structure comprising:

  • a layer of dielectric on a substrate, at least one trench formed in said dielectric on said substrate, a metal liner formed in said trench, a conductor selected from the group consisting of copper and copper alloys on said liner filling said trench, a planarized upper surface of said conductor with the upper surface of said layer of dielectric, and a conductive film over said upper surface of said conductor only, said conductive film having a thickness in the range from 1 to 20 nm and forming a metal to metal chemical and metallurgical bond to provide high electromigration resistance and high resistance to thermal stress voiding and whereby said upper surface of said conductor and said upper surface of said layer of dielectric remain within 20 nm of being co-planar, said conductive film selected from the group consisting of CoWP, CoSnP, CoP, CoB, CoSnB, CoWB and In whereby said upper surface of said conductor is protected from oxidation and corrosion.

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