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Etching methods

  • US 6,344,364 B1
  • Filed: 08/23/2000
  • Issued: 02/05/2002
  • Est. Priority Date: 03/27/1998
  • Status: Expired due to Term
First Claim
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1. A method of etching, comprising:

  • providing a semiconductor wafer substrate having a center and an edge;

    forming a material comprising detectable atoms over the substrate;

    etching into the material and forming etching debris;

    detecting the detectable atoms in the debris;

    estimating a degree of center-to-edge uniformity of the etching from the detecting; and

    wherein the detectable atoms comprise atoms selected from the group consisting of yttrium, lanthanides, actinides, calcium, magnesium, and mixtures thereof.

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