Manufacturing method for semiconductor metalization barrier

• US 6,344,410 B1
• Filed: 08/08/2000
• Issued: 02/05/2002
• Est. Priority Date: 03/30/1999
• Status: Expired due to Term

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Lopatin, Sergey D., Pramanick, Shekhar, Brown, Dirk
• Primary Examiner(s): Bowers, Charles
• Assistant Examiner(s): NGUYEN, THANH T
• Application Number:
  US09/634,025
• Time in Patent Office: 546 Days
• Field of Search: 438/652, 438/653-656, 438/627-629, 438/637-640, 438/643-644, 438/648, 438/650, 438/685-687, 438/672, 438/675
• US Class Current: 438/652
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 21/76849 the layer being positioned on top of the main fill metal
• CPC Class Codes: H01L 23/485 consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts H01L23/4821, H01L23/4822, H01L23/4824, H01L23/4825 take precedence; materials H01L23/532, bond pads H01L24/02, bump connectors H01L24/10
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor metalization barrier, and manufacturing method therefor, is provided which is a stack of a cobalt layer and cobalt tungsten layer deposited on a copper bonding pad.

Claims

1. A method of manufacturing a semiconductor device, comprising the steps of:

providing a semiconductor with a first dielectric layer formed thereon;

forming an opening in said first dielectric layer;

forming a first conductive layer in said opening in said first dielectric layer;

forming a second dielectric layer on said first dielectric layer and said first conductive layer;

forming an opening in said second dielectric layer and exposing a portion of said first conductive layer;

forming an adhesion layer on said exposed portion of said first conductive layer of a material selected from a group consisting of cobalt, nickel, an alloy thereof, and a combination thereof;

forming a barrier layer on said adhesion layer of a material selected from a group consisting of tungsten, titanium, tantalum, an alloy thereof, and a combination thereof; and

connecting an external electrical connection to said barrier layer, said external electrical connection uses a material selected from a group consisting of copper, aluminum, gold, silver, an alloy thereof, and a combination thereof.

2. The method as claimed in claim 1 including the step of forming said barrier layer to fill said opening in said second dielectric layer.

3. The method as claimed in claim 1 wherein said step of forming said first conductive layer uses a material selected from a group consisting of copper, aluminum, gold, silver, an alloy thereof, and a combination thereof.

4. A method of manufacturing a semiconductor device, comprising the steps of:

providing a semiconductor substrate with a device dielectric layer formed thereon;

forming a first channel dielectric layer over the device dielectric layer;

forming a first channel opening in said first channel dielectric layer;

forming a first channel barrier layer to line the first channel opening;

forming a first channel seed layer to line the first channel barrier layer;

forming a first conductive layer to fill said first channel;

forming a via dielectric layer over said first channel dielectric layer and said first conductive layer;

forming a second channel dielectric layer over the via dielectric layer;

forming a second channel opening and a via opening respectively in said second channel dielectric layer and said via dielectric layer, said second channel opening and via opening exposing a portion of said first conductive layer;

forming a second channel and via barrier layer to line the second channel opening and the via opening;

forming a second channel and via seed layer to line the second channel and via barrier layer;

forming a second conductive layer to fill said second channel opening and said via opening;

forming a pad dielectric layer over said second channel dielectric layer and said second conductive layer;

forming a pad opening in the pad dielectric layer exposing a portion of said second conductive layer;

forming a pad adhesion layer on said exposed portion of said second conductive layer of a material selected from a group consisting of cobalt, nickel, an alloy thereof, and a combination thereof;

forming a pad barrier layer on said pad adhesion layer of a material selected from a group consisting of tungsten, titanium, tantalum, an alloy thereof, and a combination thereof; and

connecting an external electrical connection to said pad barrier layer, said external electrical connection of a material selected from a group consisting of copper, aluminum, gold, silver, an alloy thereof, and a combination thereof.

5. The method as claimed in claim 4 wherein said step of forming said pad barrier layer fills said pad opening over said pad adhesion layer.

6. The method as claimed in claim 4 wherein said steps of forming said first channel barrier layer and said second channel and via barrier layer use a material selected from a group consisting of tungsten, titanium, tantalum, an alloy thereof, and a combination thereof.

7. The method as claimed in claim 4 wherein said steps of forming said first channel seed layer and said second channel and via seed layer use a material selected from a group consisting of copper, aluminum, gold, silver, an alloy thereof, and a combination thereof.

8. The method as claimed in claim 4 wherein said steps of forming said first and second conductive layers use a material selected from a group consisting of copper, aluminum, gold, silver, an alloy thereof, and a combination thereof.