Pulsed-mode RF bias for sidewall coverage improvement
First Claim
Patent Images
1. A method of depositing a material on a substrate in a process chamber, comprising:
- (a) providing a first signal to a support member having the substrate disposed thereon;
(b) providing a second signal to a target;
(c) energizing a magnetic field generator disposed in the processing chamber;
(d) varying the first signal between a first negative voltage portion and a first zero voltage portion relative to ground during a first phase; and
(e) maintaining the first signal at a constant voltage during a second phase.
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Abstract
The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. A target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil, thereby producing electrons and ions. In one embodiment, one or both of the signals to the substrate and the target are modulated. Preferably, the modulated signal to the substrate includes a negative voltage portion and a zero voltage portion.
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Citations
23 Claims
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1. A method of depositing a material on a substrate in a process chamber, comprising:
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(a) providing a first signal to a support member having the substrate disposed thereon;
(b) providing a second signal to a target;
(c) energizing a magnetic field generator disposed in the processing chamber;
(d) varying the first signal between a first negative voltage portion and a first zero voltage portion relative to ground during a first phase; and
(e) maintaining the first signal at a constant voltage during a second phase. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
(e) supplying a gas to the chamber;
(f) sputtering a material from the target; and
(g) ionizing the sputtered material.
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10. The method of claim 1, further comprising:
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(e) providing a plasma to the chamber;
(f) sputtering a material from the target; and
(g) ionizing the sputtered material;
wherein (a) comprises supplying a first RF signal to the substrate, (b) comprises supplying a DC signal to the target and (c) comprises supplying a second RF signal to the magnetic field generator.
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11. The method of claim 1, further comprising:
(e) varying the second signal between a second negative voltage portion and a second zero voltage portion relative to ground.
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12. The method of claim 11, wherein the second signal comprises a pulsed DC signal.
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13. A method of depositing a material on a substrate in a process chamber, comprising:
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(a) supplying a plasma to the processing chamber;
(b) providing a first signal of a first waveform to a support member having the substrate disposed thereon;
(c) providing a second signal of a second waveform to a target;
(d) energizing a coil with a RF signal;
(e) varying the first signal between a first negative voltage portion and a first zero voltage portion relative to ground during a first phase; and
(f) maintaining the first signal at a constant voltage during a second phase. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A program product, which when read and executed by one or more controllers, comprises the steps of:
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(a) flowing a gas into a processing chamber;
(b) providing a second signal to a target;
(c) providing a first signal to a support member having the substrate disposed thereon;
(d) energizing a coil with an RF signal;
(e) varying the first signal between a first negative voltage portion and a first zero voltage portion relative to ground during a first phase; and
(f) maintaining the first signal at a constant voltage during a second phase. - View Dependent Claims (21, 22, 23)
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Specification