Plasma processing method and plasma processing apparatus

• US 6,344,420 B1
• Filed: 03/14/2000
• Issued: 02/05/2002
• Est. Priority Date: 03/15/1999
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Miyajima, Hideshi, Fujita, Keiji
• Primary Examiner(s): Le, Vu A.
• Assistant Examiner(s): LUU, PHO M
• Application Number:
  US09/525,038
• Time in Patent Office: 693 Days
• Field of Search: 438/758, 438/700, 438/710, 118/723, 118/720, 156/345, 156/627.1
• US Class Current: 438/758
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: H01J 37/32431 Constructional details of the reactor

Abstract

In a parallel-plate type plasma processing apparatus including an upper electrode having a plurality of gas introducing inlets and a support table serving as a lower electrode opposed to the upper electrode and having a silicon wafer thereon, the open ends of the inlets are expanded in their diameter directions.

Claims

1. A plasma processing apparatus of a parallel-plate type comprising a lower electrode on which a subject to be processed is placed and an upper electrode opposed to the lower electrode and having a plurality of gas inlets facing the lower electrode, wherein at least some of the plurality of gas inlets are expanded in a diameter direction at open ends thereof.

2. The plasma processing apparatus according to claim 1, wherein the plurality of inlets includes first gas inlets for introducing a first material gas whose dissociation efficiency is low in the plasma and second gas inlets for introducing a second material gas whose dissociation efficiency is high in the plasma, and the first gas inlets are expanded in a diameter direction at open ends thereof more greatly than the second gas inlets.

3. The plasma processing apparatus according to claim 1, wherein the open ends of the inlets are varied in diameter with an in-plane position of the upper electrode.

4. The plasma processing apparatus according to claim 1, wherein the plurality of inlets include first gas inlets for introducing a first material gas whose dissociation efficiency is low in the plasma and second gas inlets for introducing a second material gas whose dissociation efficiency is high in the plasma the upper electrode includes an inner region and an outer region surrounding the inner region, and the first gas inlets in the outer region of the upper electrode are expanded in a diameter direction at open ends thereof more greatly than the second gas inlets.

5. The plasma processing apparatus according to claim 1, wherein the plurality of inlets include first gas inlets for Introducing a first material gas whose dissociation efficiency is low in the plasma and second gas inlets for introducing a second material gas whose dissociation efficiency is high in the plasma, the upper electrode includes an inner region and an outer region surrounding the inner region, and the first gas inlets in the outer region of the upper electrode are expanded in a diameter direction at open ends thereof more greatly than the first gas inlets in the inner region of the upper electrode.

6. A plasma processing apparatus of a parallel-plate type comprising a lower electrode on which a subject to be processed is placed and an upper electrode opposed to the lower electrode and having a plurality of gas inlets facing the lower electrode, wherein an interval between the lower electrode and open ends of the plurality of inlets is varied with an in-plane position of the upper electrode.

7. The plasma processing apparatus according to claim 6, wherein the upper electrode includes an inner region and an outer region surrounding the inner region, and an interval between the lower electrode and the open ends of the inlets in the inner region of the upper electrode is set larger than that between the lower electrode and the open ends of the inlets in the outer region of the upper electrode.

8. A plasma processing apparatus of a parallel-plate type comprising a lower electrode on which a subject to be processed is placed and an upper electrode opposed to the lower electrode and having a plurality of gas inlets facing the lower electrode, wherein a shield plate having a plurality of holes is disposed between the upper electrode and the lower electrode.

9. The plasma processing apparatus according to claim 8, wherein the holes of the shield plate are aligned with an orbit in which gas having high dissociation efficiency in the plasma goes straight through the gas inlets, and the shield plate is disposed so as to block an orbit in which gas having low dissociation efficiency in the plasma goes straight.

10. The plasma processing apparatus according to claim 8, wherein the holes of the shield plate are varied in number with an in-plane position of the upper electrode.

11. The plasma processing apparatus according to claim 8, wherein the upper electrode includes an inner region and an outer region surrounding the inner region, and the density of holes of the shield plate in the outer region of the upper electrode is set higher than that in the inner region thereof.