Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages
First Claim
1. A transistor device structure comprising:
- a substrate on which an electrically conducting gate electrode is disposed;
a layer of high dielectric constant gate insulator disposed on said gate electrode;
an electrically conductive source electrode and an electrically conductive drain electrode disposed on said layer of gate insulator;
a layer of an organic-inorganic hybrid semiconductor disposed on said gate insulator and said source electrode and said drain electrode.
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Accused Products
Abstract
A thin film transistor (TFT) device structure based on an organic-inorganic hybrid semiconductor material, that exhibits a high field effect mobility, high current modulation at lower operating voltages than the current state of the art organic-inorganic hybrid TFT devices. The structure comprises a suitable substrate disposed with the following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic-inorganic hybrid semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure. Use of high dielectric constant gate insulators exploits the gate voltage dependence of the organic-inorganic hybrid semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this high dielectric constant gate insulator material and the means to integrate it into the organic-inorganic hybrid based TFT structure are taught that would enable easy fabrication on glass or plastic substrates and the use of such devices in flat panel display applications.
194 Citations
42 Claims
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1. A transistor device structure comprising:
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a substrate on which an electrically conducting gate electrode is disposed;
a layer of high dielectric constant gate insulator disposed on said gate electrode;
an electrically conductive source electrode and an electrically conductive drain electrode disposed on said layer of gate insulator;
a layer of an organic-inorganic hybrid semiconductor disposed on said gate insulator and said source electrode and said drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 19, 20, 21, 23, 28, 29, 30, 31, 32)
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15. A method of fabricating a transistor device structure comprising:
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providing a substrate on which an electrically conducting gate electrode is disposed;
disposing a layer of high dielectric constant gate insulator disposed on said gate electrode;
disposing an electrically conductive source electrode and an electrically conductive drain electrode on said layer of gate insulator;
disposing a layer of an organic-inorganic hybrid semiconductor on said gate insulator and said source electrode and said drain electrode. - View Dependent Claims (16, 17, 18, 22, 37, 38, 39, 40, 41, 42)
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24. A thin film transistor device structure comprising a substrate on which a plurality of electrically conducting gate electrodes are disposed;
- a layer of high dielectric constant gate insulator disposed on said electrodes;
a layer of an organic-inorganic hybrid semiconductor disposed on said insulator and substantially overlapping with each of the said gate electrodes;
a plurality of sets of electrically conductive source and drain electrodes disposed on said organic-inorganic hybrid semiconductor and said high dielectric constant gate insulator in alignment with each of the said gate electrodes. - View Dependent Claims (33)
- a layer of high dielectric constant gate insulator disposed on said electrodes;
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25. A transistor device structure comprising:
- a drain, a source electrode, a drain electrode, a gate electrode, a gate insulator and a semiconductive material disposed between and in electrical contact with said source electrode and said gate electrode, said gate insulator is disposed between said gate electrode and said active region;
said semiconductive material is an organic-inorganic hybrid material. - View Dependent Claims (26, 27, 34, 35, 36)
- a drain, a source electrode, a drain electrode, a gate electrode, a gate insulator and a semiconductive material disposed between and in electrical contact with said source electrode and said gate electrode, said gate insulator is disposed between said gate electrode and said active region;
Specification