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Voltage contrast method for semiconductor inspection using low voltage particle beam

  • US 6,344,750 B1
  • Filed: 01/08/1999
  • Issued: 02/05/2002
  • Est. Priority Date: 01/08/1999
  • Status: Expired due to Term
First Claim
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1. A method of detecting defects in a patterned substrate comprising the acts of:

  • directing a charged particle beam onto the substrate;

    scanning the beam across the substrate;

    optimizing parameters of the beam to improve uniformity and contrast of a resulting image and an image acquisition speed;

    acquiring an image of a first area of the substrate from charged particles from the substrate, including charging a second area of the substrate and imaging the first area, the second area encompassing the first area; and

    comparing the acquired image with a reference to identify defects in the patterned substrate.

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