Noncontact communication semiconductor device

• US 6,344,824 B1
• Filed: 02/05/2001
• Issued: 02/05/2002
• Est. Priority Date: 09/18/1998
• Status: Expired due to Fees

• Current Assignee: Hitachi Maxell Limited (Hitachi, Ltd.)
• Original Assignee: Hitachi Maxell Limited (Hitachi, Ltd.)
• Inventors: Inose, Fumiyuki, Takasugi, Wasao
• Primary Examiner(s): PHAN, THO GIA
• Application Number:
  US09/762,216
• Time in Patent Office: 365 Days
• Field of Search: 343/700.MS, 343/702, 343/741, 343/742, 343/866, 343/867, 343/895, 235/487, 235/491, 257/679, 257/778, 340/572.7, 340/572.8
• US Class Current: 343/700.0MS
• CPC Class Codes: H01Q 1/2225 used in active tags, i.e. provided with its own power source or in passive tags, i.e. deriving power from RF signal
• CPC Class Codes: H01Q 1/38 formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: H01Q 21/06 Arrays of individually energised antenna units similarly polarised and spaced apart
• CPC Class Codes: H01Q 7/00 Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
• CPC Class Codes: H01Q 7/04 Screened antennas H01Q7/02, H01Q7/06 take precedence
• CPC Class Codes: H01Q 7/08 Ferrite rod or like elongated core

Abstract

A compact noncontact communication semiconductor device having a multidirectional or omnidirectional antenna and usable in a minuscule space to which the applications have conventionally been difficult is provided. The outer peripheral portion of a spherical IC 1 is covered with an insulating layer 4 having a thickness equal to or larger than the diameter of the IC 1, and antenna patterns 2 are formed on the surface of the insulating layer 4. The antenna patterns 2 can be configured either with a winding or by microprocessing using etching or laser beam, for example, for the conductive film formed on the surface of the insulating layer 4. The antenna patterns 2 and the circuit pattern formed on the surface of the IC 1 are interconnected via a through hole 5.

Claims

1. A noncontact communication semiconductor device characterized by comprising an IC having a three-dimensional circuit-forming surface and a radio communication antenna formed as a three-dimensional pattern on the surface of said IC.

2. A noncontact communication semiconductor device as described in claim 1, characterized in that said IC has a curved contour surface.

3. A noncontact communication semiconductor device as described in claim 2, characterized in that said IC is spherical.

4. A noncontact communication semiconductor device as described in claim 1, characterized in that an insulating layer is interposed between said IC and said antenna.

5. A noncontact communication semiconductor device characterized by comprising an IC having a three-dimensional circuit-forming surface and a radio communication antenna attached on the outer peripheral surface of said IC and electrically connected to the input/output terminals of the circuit formed three-dimensionally on said circuit-forming surface, wherein said antenna is configured with two conductive hollow hemispherical members, and the peripheral edge portions of these two conductive hollow hemispherical members are arranged in opposed relation to each other through a predetermined slit.

6. A noncontact communication semiconductor device characterized by comprising an IC having a three-dimensional circuit-forming surface and a radio communication antenna attached on the outer peripheral surface of said IC and electrically connected to the input/output terminals of the circuit formed three-dimensionally on said circuit-forming surface, wherein said antenna is configured with a conductive hollow spherical member having a slit in a portion thereof.