Single wafer annealing oven

• US 6,345,150 B1
• Filed: 11/30/1999
• Issued: 02/05/2002
• Est. Priority Date: 11/30/1999
• Status: Expired due to Fees

• Current Assignee: WaferMasters, Inc.
• Original Assignee: WaferMasters, Inc.
• Inventors: Yoo, Woo Sik
• Primary Examiner(s): Walberg, Teresa
• Assistant Examiner(s): FUQUA, SHAWNTINA T
• Application Number:
  US09/452,049
• Time in Patent Office: 798 Days
• Field of Search: 219/390, 219/405, 219/411, 118/724, 118/725, 118/50.1, 392/416, 392/418
• US Class Current: 392/418
• CPC Class Codes: C30B 31/12 Heating of the reaction chamber
• CPC Class Codes: H01L 21/67115 mainly by radiation

Abstract

A heating apparatus for isothermally distributing a temperature across a semiconductor device or wafer during processing. The invention includes a chamber configured to receive a single semiconductor wafer. Housed within the chamber is a heating member or heating plate. Disposed on a periphery of the heating member is a heat source. Heat energy radiating from the heat source conducts through the heating member to create an isothermal temperature distribution across the heating member. Wafer supports are included on the heating plate which support the wafer in close proximity to the heating plate, such that the temperature of the heating plate establishes the temperature of the wafer. Advantageously, this configuration permits the temperature to be uniformly and isothermally distributed over the wafer.

Claims

1. An apparatus for heating a wafer during processing, the apparatus comprising:

a process chamber defining a cavity;

a first heatable plate disposed in said cavity configured to receive a wafer thereon said heatable plate remaining stationary in said cavity relative to said process chamber;

a second heatable plate disposed in said cavity proximate and adjacent to said first heatable plate, said wafer disposed therebetween, free of contact with said first heatable plate and said second heatable plate; and

a resistive heating element contacting each of said first and second heatable plates, said first and second heatable plates conducting heat from said resistive heating element to create a uniform temperature distribution across said heatable plate, said wafer sensing thermal energy output from said first heatable plate and said second heatable plate.

2. The apparatus of claim 1, further comprising a plurality of heating elements positioned proximate to said process chamber, a thermal energy output from each of said heating elements capable of heating said process chamber to create a substantially isothermal enviromnment in said cavity.

3. The apparatus of claim 2, wherein each of said resistive heating elements comprises a ceramic core wrapped with a wire comprising Al—

Ni—

Fe.

4. The apparatus of claim 1, wherein said process chamber comprises a material selected from the group consisting of quartz and silicon carbide.

5. The apparatus of claim 1, wherein said first and said second heatable plates comprise circular disks.

6. The apparatus of claim 5, wherein each of said circular disks has a radius greater than a radius of said wafers.

7. The apparatus of claim 1, wherein each of said first and second heatable plates is made of a material selected from the group consisting of silicon carbide, quartz, inconel, aluminum, and steel.

8. The apparatus of claim 1, further comprising a wafer support disposed on a surface of said first heatable plate upon which said wafer can be positioned to maintain said wafer free of contact with said first heatable plate.

9. The apparatus of claim 1, wherein said heat source comprises a resistive heating device.

10. A reactor for rapidly and uniformly annealing a semiconductor wafer, the reactor comprising:

a chamber defining a cavity;

a first conductive heating member in said cavity configured to receive a wafer thereon and to remain stationary relative to said chamber;

a second conductive heating member in said cavity positioned adjacent to said first conductive heating member;

wafer supports disposed on a surface of said first conductive heating member upon which said wafer can be positioned to maintain said wafer free of contact with said first conductive heating member; and

a plurality of resistive heating devices each in contact with corresponding first and second conductive heating members to create a uniform temperature distribution across each of said first and second conductive heating members, said wafer sensing thermal energy output from said first conductive heating member and said second conductive heating member.

11. The reactor of claim 10, further comprising a plurality of resistive heating elements positioned proximate to said chamber, a thermal energy output from each of said resistive heating elements providing a substantially isothermal temperature in said cavity.

12. The reactor of claim 10, wherein said process chamber comprises a material selected from the group consisting of quartz and silicon carbide.

13. The reactor of claim 10, wherein said first and second conductive heating members comprise circular disks, wherein said circular disks have a radius greater than a radius of said wafer.

14. The reactor of claim 10, wherein said wafer remains stationary during processing.

15. The reactor of claim 10, wherein said first and second conductive heating members comprise a material selected from the group consisting of silicon carbide, quartz, inconel, aluminum, and steel.

16. The reactor of claim 10, wherein said wafer supports comprise at least three wafer supports on a surface of said first conductive heating member.

17. The reactor of claim 10, wherein a total contact area between said wafer supports and said wafer is less than about 300 mm^2.

18. An apparatus for heating a wafer during processing, the apparatus comprising:

a process chamber defining a cavity;

a plurality of heatable members disposed in said cavity in a vertically stacked configuration;

a wafer support mechanism disposed on a surface of each of said heatable members upon which a wafer can be positioned to maintain said wafer free of contact with said surface of said heatable members; and

a heat source disposed on a periphery of each of said heatable members to conduct heat through said heatable members to create a uniform temperature distribution across each of said heatable members, said wafer sensing thermal energy output from proximately stacked heatable members.

19. The apparatus of claim 18, further comprising a plurality of heating elements positioned proximate to said process chamber, a thermal energy output from each of said heating elements capable of heating said process chamber to create a substantially isothermal environment in said cavity.

20. The apparatus of claim 18, wherein each of said plurality of heatable members comprise a circular disk.

21. The apparatus of claim 20, wherein each of said circular disks has a radius greater than a radius of said wafers.

22. The apparatus of claim 18, wherein each of said heatable members comprises a meterial selected from the group consisting of silicon carbide, quartz, inconel, aluminum, and steel.

23. The apparatus of claim 18, wherein said wafer support mechanism comprises at least three wafer standoffs.

24. The apparatus of claim 18, wherein a total contact area between said wafer support mechanism and said wafer is less than about 300 mm².