Durable sputtered metal oxide coating

• US 6,346,174 B1
• Filed: 07/28/1995
• Issued: 02/12/2002
• Est. Priority Date: 11/12/1993
• Status: Expired due to Term

• Current Assignee: Vitro Flat Glass LLC (Compagnie De Saint-Gobain)
• Original Assignee: PPG Industries Ohio Incorporated (Nouryon BV)
• Inventors: Finley, James J., Arbab, Mehran
• Primary Examiner(s): Nguyen, Nam
• Assistant Examiner(s): Cantelmo, Gregg
• Application Number:
  US08/508,408
• Publication Number:
  US 20020009621A1
• Time in Patent Office: 2,391 Days
• Field of Search: 204/192.15, 204/192.16, 204/192.22, 204/192.26
• US Class Current: 204/192.15
• CPC Class Codes: C03C 17/245 by deposition from the vapour phase
• CPC Class Codes: C03C 17/2456 Coating containing TiO2
• CPC Class Codes: C03C 17/27 by oxidation of a coating previously applied
• CPC Class Codes: C03C 17/3417 all coatings being oxide coatings
• CPC Class Codes: C03C 2217/212 TiO2
• CPC Class Codes: C03C 2218/154 by sputtering
• CPC Class Codes: C03C 2218/155 by reactive sputtering
• CPC Class Codes: C03C 2218/322 Oxidation
• CPC Class Codes: C23C 14/0036 Reactive sputtering
• CPC Class Codes: C23C 14/0089 in metallic mode
• CPC Class Codes: C23C 14/083 of refractory metals or yttrium
• CPC Class Codes: C23C 14/185 by cathodic sputtering
• CPC Class Codes: C23C 14/58 After-treatment
• CPC Class Codes: C23C 14/5806 Thermal treatment
• CPC Class Codes: C23C 14/5853 Oxidation
• CPC Class Codes: Y10T 428/12576 Boride, carbide or nitride component
• CPC Class Codes: Y10T 428/12611 Oxide-containing component
• CPC Class Codes: Y10T 428/12667 Oxide of transition metal or Al

Abstract

A method and resultant product are disclosed wherein a metal film is deposited by sputtering a metal cathode target in an essentially nonreactive atmosphere comprising inert gas and a reactive gas, wherein the concentration of reactive gas is sufficiently low that the sputtering is accomplished in the metallic mode, i.e. the film is deposited as metal. The metal film of the present invention is harder than a metal film sputtered in an atmosphere consisting of only inert gas. The method and resultant product may further comprise thermal oxidation of the metal film, which proceeds more efficiently than oxidation of a metal film sputtered in an atmosphere consisting of only inert gas.

Claims

1. The method of producing a substantially amorphous metal film by cathode sputtering comprising the steps of:

placing a substrate in an evacuated chamber having an atmosphere comprising argon and up to 30% oxygen; and

sputtering a titanium cathode target below its switch point in the chamber wherein the atmosphere is sufficiently inert that the titanium is sputtered to deposit a titanium film and sufficiently reactive that the titanium film deposited is substantially amorphous; and

after the practice of the sputtering step, oxidizing the titanium film.

2. The method according to claim 1, further comprising the step of depositing a metal oxide layer over the amorphous metal film prior to the practice of the oxidizing step wherein the amorphous metal film is thermally oxidized.

3. The method according to claim 1 wherein after the practice of the oxidizing step the titanium amorphous film is a titanium oxide crystalline film.

4. The method according to claim 3 wherein the titanium amorphous film is thermally oxidized.

5. The method according to claim 3 wherein the titanium oxide crystalline film has a crystalline structure having a density greater than 3.4 g/cm³.

6. The method according to claim 1 wherein the titanium film deposited is a titanium metal film.

7. A method of producing a substantially amorphous metal film by cathode sputtering comprising the steps of:

placing a substrate in an evacuated chamber having an atmosphere comprising argon and up to 30% oxygen;

sputtering a titanium metal cathode target in the chamber wherein the sputtering step is practiced by energizing the titanium metal cathode target and regulating the atmosphere to operate below the switch point of the target to have a predominantly inert gas and sufficient reactive gas to deposit a substantially amorphous titanium metal film, and

after the practice of the sputtering step, oxidizing the titanium film.

8. The method according to claim 7 wherein after the practice of the oxidizing step the titanium amorphous film is a titanium oxide crystalline film.

9. The method according to claim 8 wherein the titanium amorphous film is thermally oxidized.

10. The method according to claim 7, further comprising the step of depositing a metal oxide layer over the amorphous titanium metal film prior to the practice of the oxidizing step wherein the amorphous titanium metal film is thermally oxidized.

11. The method according to claim 7 wherein after the practice of the oxidizing step the amorphous titanium metal film is a crystalline titanium oxide film.

12. The method according to claim 11 wherein the amorphous titanium metal film is thermally oxidized.

13. The method according to claim 11 wherein the crystallized titanium oxide film has a crystalline structure having a density greater than 3.4 g/cm³.

14. A method of sputter coating a substantially amorphous metal film on a substrate, comprising the steps of:

positioning a metal cathode target and a substrate to be coated in a chamber, the metal of the metal cathode target having a reactive gas switch point and the metal cathode target when operated in an inert gas below the switch point deposits a metal film having a crystalline structure defined as a crystalline metal film, and when operated above the switch point deposits a reacted metal film having an amorphous structure defined as an amorphous reacted metal film;

moving into the chamber a ratio of inert gas and reactive gas to provide in the chamber an atmosphere, and

energizing the metal cathode target and regulating the atmosphere to operate below the switch point of the metal cathode target to have a predominately inert gas and sufficient reactive gas to deposit a metal film on the substrate having a substantially amorphous structure defined as an amorphous metal film.

15. The method according to claim 14, wherein the metal of the metal cathode target is selected from the group consisting of titanium, zirconium, tantalum, hafnium, niobium, vanadium and mixtures thereof.

16. The method according to claim 15, wherein the reactive gas is selected from the group consisting of oxygen, nitrogen and mixtures thereof and the inert gas is argon.

17. A method according to claim 16, wherein the atmosphere comprises argon and up to 30 percent oxygen.

18. The method according to claim 14, wherein the metal cathode target is a titanium cathode target, the reactive gas is oxygen and the switch point of the titanium cathode target is less than about 20 percent oxygen and the power is equal to or less than about 4 kilowatts.

19. The method according to claim 14, wherein the metal cathode target is a zirconium cathode target, the reactive gas is oxygen and the switch point of the zirconium cathode target is less than about 30 percent oxygen and the power is equal to or less than about 4 kilowatts.

20. The method according to claim 14 wherein the amorphous metal film is an amorphous titanium metal film.

21. The method according to claim 20 further including the step of oxidizing the amorphous titanium metal film.

22. The method according to claim 21 wherein the titanium metal film is thermally oxidized.

23. The method according to claim 22 wherein the titanium amorphous metal film after oxidizing is a titanium crystalline metal oxide film.

24. The method according to claim 14, wherein the atmosphere comprises 5 to 15 percent oxygen in argon, the amorphous metal film is an amorphous titanium film, and further comprising the steps of depositing a titanium oxide film onto the amorphous titanium film and heating the amorphous titanium film in air at a temperature of at least 400°

C. to oxidize the amorphous titanium film to provide a crystalline titanium oxide film.

25. The method according to claim 14, further comprising the step of oxidizing the amorphous metal film.

26. The method according to claim 25, wherein the amorphous metal film is an amorphous titanium film and further comprising the step of depositing a metal oxide film on the amorphous titanium film prior to the step of oxidizing the amorphous titanium film.

27. The method according to claim 26, wherein said step of depositing a metal oxide film on the amorphous titanium film comprises depositing a titanium oxide film, and said step of oxidizing the amorphous titanium film comprises thermally oxidizing the amorphous titanium film.

28. The method according to claim 14, wherein:

the crystalline metal film has a predetermined property value, the amorphous reacted metal film has a predetermined property value different than the predetermined property value of the crystalline metal film;

the predetermined property value of the crystalline metal film defines a first limit and the predetermined property value of the amorphous reacted metal film defines a second limit wherein the first limit and second limit define a predetermined value range, and

the crystalline metal film has a predetermined property value different than the predetermined property value of at least one of the crystalline metal films and the amorphous metal reacted film.

29. The method according to claim 28, wherein the metal of the metal cathode target is selected from the group consisting of titanium and zirconium.

30. A method according to claim 29, wherein the metal is titanium.

31. The method according to claim 28, wherein the amorphous metal film is an amorphous titanium film and further comprising the step of oxidizing the amorphous titanium film.

32. The method according to claim 28, wherein the reactive gas is selected from the group consisting of oxygen, nitrogen and mixtures thereof.

33. The method according to claim 32, wherein the predetermined property value of the amorphous metal film is different than the predetermined property value of the crystalline metal film and of the amorphous reacted metal film and within the predetermined value range.

34. The method according to claim 33, wherein the predetermined property is hardness and the amorphous metal film is harder than crystalline metal film and softer than the amorphous reacted metal films.

35. The method according to claim 34, wherein the inert gas is argon.

36. The method according to claim 33, wherein the reactive gas is oxygen and the inert gas is argon.

37. The method according to claim 36, wherein the metal of the metal cathode target is selected from the group consisting of titanium and zirconium.

38. The method according to claim 37, wherein the metal of the metal cathode target is titanium, and the atmosphere comprises from 2 to 30 percent oxygen in argon.

39. A method according to claim 33, wherein the reactive gas is oxygen.

40. The method according to claim 39, wherein the predetermined property is hardness and the amorphous metal film is harder than the crystalline metal film and softer than the amorphous reacted metal film.

41. The method according to claim 39, wherein the predetermined property is visible light transmittance and the crystalline metal film has a percent transmission lower than the percent transmission of the amorphous reacted metal film and the amorphous metal film has a percent transmission greater than the percent transmission of the crystalline metal film and less than the percent transmission of the amorphous reacted metal film wherein the thickness of the crystalline metal film, amorphous reacted metal film and amorphous metal film being substantially equal.

42. The method according to claim 41, wherein the difference between the percent transmission of the crystalline metal film and the amorphous metal film is less than the difference between the percent transmission of the amorphous metal film and the amorphous reacted metal film.

43. The method according to claim 39, wherein the predetermined property is electrical conductivity and the crystalline metal film has an electrical conductivity greater than the electrical conductivity of the amorphous reacted metal film and the amorphous metal film has an electrical conductivity greater than the electrical conductivity of the amorphous reacted metal film and less than the electrical conductivity of the crystalline metal film wherein the thickness of the crystalline metal film, amorphous reacted metal film and amorphous metal film being substantially equal.

44. The method according to claim 39, wherein the predetermined property is percent reflectance with the crystalline metal film having a percent reflectance greater than the percent reflectance of the amorphous reacted metal film and the amorphous metal film having a percent reflectance higher than the percent reflectance of the amorphous reacted metal film and lower than the crystalline metal film wherein the thickness of the crystalline metal film, amorphous reacted metal film and the amorphous metal film are substantially equal.

45. The method according to claim 39, wherein the predetermined property is density and the amorphous metal film has a density less than the density of crystalline metal film and greater than the density of amorphous reacted metal film.