Semiconductor device with silicide contact structure and fabrication method thereof

• US 6,346,465 B1
• Filed: 06/22/2000
• Issued: 02/12/2002
• Est. Priority Date: 06/23/1997
• Status: Expired due to Term

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Corporation
• Inventors: Miura, Yoshinao, Ishida, Koichi
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): LATTIN, CHRISTOPHER W
• Application Number:
  US09/598,502
• Time in Patent Office: 600 Days
• Field of Search: 438/558, 438/559, 438/561, 438/682, 438/542
• US Class Current: 438/542
• CPC Class Codes: H01L 21/28518 the conductive layers comprising silicides H01L21/28537 takes precedence
• CPC Class Codes: H01L 21/28537 Deposition of Schottky electrodes
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material

Abstract

A fabrication method of a semiconductor device that realizes a simplified contact formation process is provided. After a single-crystal silicon substrate having a main surface is provided, a dielectric film having a contact hole uncovering the main surface of the substrate is formed on the main surface of the substrate. Next, a silicon nitride film is formed on the main surface of the substrate in the contact hole of the dielectric film. Then, a metal film is formed on the dielectric film to be contacted with the silicon nitride film in the contact hole of the dielectric film. The metal film has a property that an atom of the metal film serves as diffusion species in a solid-phase silicidation reaction. The metal film, the silicon nitride film, the dielectric film, and the substrate are heat-treated to thereby form a metal silicide film due to a solid-phase silicidation reaction between the metal film and the substrate. The metal silicide film thus formed is contacted with the main surface of the substrate in the contact hole of the dielectric film. The metal silicide film has a single-crystal structure. Finally, an electrically conductive film is formed on the dielectric film to be electrically contacted with the main surface of the substrate through the metal silicide film in the contact hole of the dielectric film.

Claims

1. A fabrication method of a semiconductor device, comprising the steps of:

(a) providing a single-crystal silicon substrate having a main surface;

(b) forming a dielectric film having a contact hole uncovering said main surface of said substrate on said main surface of said substrate;

(c) forming a silicon nitride film on said main surface of said substrate in said contact hole of said dielectric film;

(d) forming a metal film on said dielectric film to be contacted with said silicon nitride film in said contact hole of said dielectric film;

said metal film having a property that an atom of said metal film serves as diffusion species in a solid-phase silicidation reaction;

(e) heat-treating said metal film, said silicon nitride film, said dielectric film, and said substrate to thereby form a metal silicide film due to a solid-phase silicidation reaction between said metal film and said substrate;

said metal silicide film being contacted with said main surface of said substrate in said contact hole of said dielectric film;

said silicon nitride film being left on said metal silicide film;

(f) forming an electrically conductive film on said dielectric film to be contacted with said silicon nitride film;

said electrically conductive film being electrically connected to said substrate through said silicon nitride film and said metal silicide film in said contact hole of said dielectric film.

2. The method as claimed in claim 1, wherein the silicon nitride film has a thickness of 0.5 to 1.5 nm.

3. The method as claimed in claim 1, wherein the silicon nitride film has a thickness of 0.5 to 1.0 nm.

4. The method as claimed in claim 1, wherein said metal silicide film is a silicide of a metal selected from the group consisting of cobalt (Co), nickel (Ni), vanadium (V), platinum (Pt), and palladium (Pd).

5. The method as claimed in claim 1, wherein said metal silicide film is a silicide of Co.