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Semiconductor device and a process for forming the semiconductor device

  • US 6,346,469 B1
  • Filed: 01/03/2000
  • Issued: 02/12/2002
  • Est. Priority Date: 01/03/2000
  • Status: Expired due to Term
First Claim
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1. A process for forming a semiconductor die comprising:

  • forming a die interconnect pad over a semiconductor device substrate; and

    forming a conductive bump over and electrically connected to the die interconnect pad, wherein;

    the conductive bump includes a first metallic layer and a second metallic layer, wherein;

    the first metallic portion lies closer to the semiconductor die compared to the second metallic portion, is a main portion of the conductive bump, and does not substantially include lead; and

    the second metallic portion is a farthest metallic portion of the conductive bump with respect to the semiconductor die, and wherein the second metallic portion includes lead.

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