Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate
First Claim
1. A semiconductor device comprising:
- at least a pixel TFT being formed in a display region over a substrate; and
at least an n-channel TFT and at least a p-channel TFT in a drive circuit each being formed in a periphery of the display region over the substrate;
each of said pixel TFT, and said n-channel and p-channel TFTs in the drive circuit includes;
an active layer, at least an LDD region being formed in the active layer, a gate insulating film being provided between the active layer and the substrate, and a gate electrode being provided between the gate insulating film and the substrate, wherein at least a portion of the LDD region of the pixel TFT is formed so as to overlap with the gate electrode of the pixel TFT, wherein at least a portion of the LDD region of the n-channel TFT in the drive circuit is formed so as to overlap with the gate electrode of the n-channel TFT in the drive circuit, and wherein all of the LDD region of the p-channel TFT of the drive circuit is formed so as to overlap with a gate electrode in the p-channel TFT in the drive circuit.
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Accused Products
Abstract
The present invention provides a semiconductor device in which a bottom-gate TFT or an inverted stagger TFT arranged in each circuit is suitably constructed in conformity with the functionality of the respective circuits, thereby attaining an improvement in the operating efficiency and reliability of the semiconductor device. In the structure, LDD regions in a pixel TFT are arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in an N-channel TFT of a drive circuit is arranged so as not to overlap with a channel protection insulating film and to overlap with a gate electrode by at least a portion thereof. LDD regions in a P-channel TFT of the drive circuit is arranged so as to overlap with a channel protection insulating film and to overlap with the gate electrode.
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Citations
12 Claims
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1. A semiconductor device comprising:
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at least a pixel TFT being formed in a display region over a substrate; and
at least an n-channel TFT and at least a p-channel TFT in a drive circuit each being formed in a periphery of the display region over the substrate;
each of said pixel TFT, and said n-channel and p-channel TFTs in the drive circuit includes;
an active layer, at least an LDD region being formed in the active layer, a gate insulating film being provided between the active layer and the substrate, and a gate electrode being provided between the gate insulating film and the substrate, wherein at least a portion of the LDD region of the pixel TFT is formed so as to overlap with the gate electrode of the pixel TFT, wherein at least a portion of the LDD region of the n-channel TFT in the drive circuit is formed so as to overlap with the gate electrode of the n-channel TFT in the drive circuit, and wherein all of the LDD region of the p-channel TFT of the drive circuit is formed so as to overlap with a gate electrode in the p-channel TFT in the drive circuit. - View Dependent Claims (3, 4, 5, 6, 7)
wherein the p-channel TFT in the drive circuit includes: a first impurity region including both a p-type impurity and an n-type impurity and, a second impurity region including the p-type impurity, and wherein the second impurity region is formed between the first impurity region and the LDD region of the p-channel TFT in the drive circuit.
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4. A device according to claim 1, further comprising a storage capacitor being connected to the pixel TFT,
said storage capacitor including: -
a capacitor wiring formed over the substrate;
an insulating film formed on the capacitor wiring; and
a semiconductor layer being formed on the insulating film.
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5. A device according to claim 1, further comprising:
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at least an organic resin film being formed over the pixel TFT, a light shielding film being formed on the organic resin film;
a dielectric film being formed closely to the light shielding film; and
a pixel electrode connected to the pixel TFT, a portion of said pixel electrode being overlapped with the light shielding film wherein a storage capacitor is formed with the light shielding film, the dielectric film and the portion of the pixel electrode.
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6. A device according to claim 5,
wherein the light shielding film comprises at least a material selected from the group consisting of aluminum, tantalum and titanium, and wherein the dielectric film comprises an oxide of the material. -
7. A device according to claim 1,
wherein the semiconductor device is one selected from the group consisting of a cellular phone, a video camera, a mobile computer, a goggle-type display, a projector, a mobile book, a digital camera, a car navigation device, and a personal computer.
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2. A semiconductor device comprising:
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at least a pixel TFT being formed in a display region over a substrate;
at least an n-channel TFT and at least a p-channel TFT in a drive circuit each being formed in a periphery of the display region over the substrate, each of said pixel TFT, and said n-channel and p-channel TFTs in drive circuit includes;
an active layer, at least an LDD region being formed in the active layer, a gate insulating film being provided between the active layer and the substrate, and a gate electrode being provided between the gate insulating film and the substrate, wherein the LDD region of the pixel TFT is formed so as not to overlap with a channel protection insulating film of the pixel TFT, wherein a portion of the LDD region of the pixel TFT is formed so as to overlap with the gate electrode of the pixel TFT, wherein the LDD region of the n-channel TFT in the drive circuit is formed so as not to overlap with a channel protection insulating film of the n-channel TFT in the drive circuit, wherein a portion of the LDD region of the n-channel TFT in the drive circuit is formed so as to overlap with the gate electrode of the n-channel TFT in the drive circuit, wherein the LDD region of the p-channel TFT in the drive circuit is formed so as to overlap with a channel protection insulating film of the p-channel TFT in the drive circuit, and wherein all of the LDD region of the p-channel TFT in the drive circuit is formed so as to overlap with the gate electrode of the p-channel TFT in the drive circuit. - View Dependent Claims (8, 9, 10, 11, 12)
wherein the p-channel TFT in the drive circuit includes: a first impurity region including both a p-type impurity and an n-type impurity and, a second impurity region including the p-type impurity, and wherein the second impurity region is formed between the first impurity region and the LDD region of the p-channel TFT in the drive circuit.
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9. A device according to claim 2, further comprising a storage capacitor being connected to the pixel TFT,
said storage capacitor including: -
a capacitor wiring formed over the substrate;
an insulating film formed on the capacitor wiring; and
a semiconductor layer being formed on the insulating film.
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10. A device according to claim 2, further comprising:
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at least an organic resin film being formed over the pixel TFT, a light shielding film being formed on the organic resin film;
a dielectric film being formed closely to the light shielding film; and
a pixel electrode connected to the pixel TFT, a portion of said pixel electrode being overlapped with the light shielding film wherein a storage capacitor is formed with the light shielding film, the dielectric film and the portion of the pixel electrode.
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11. A device according to claim 10,
wherein the light shielding film comprises at least a material selected from the group consisting of aluminum, tantalum and titanium, and wherein the dielectric film comprises an oxide of the material. -
12. A device according to claim 2,
wherein the semiconductor device is one selected from the group consisting of a cellular phone, a video camera, a mobile computer, a goggle-type display, a projector, a mobile book, a digital camera, a car navigation device, and a personal computer.
Specification