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Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate

  • US 6,346,730 B1
  • Filed: 04/03/2000
  • Issued: 02/12/2002
  • Est. Priority Date: 04/06/1999
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • at least a pixel TFT being formed in a display region over a substrate; and

    at least an n-channel TFT and at least a p-channel TFT in a drive circuit each being formed in a periphery of the display region over the substrate;

    each of said pixel TFT, and said n-channel and p-channel TFTs in the drive circuit includes;

    an active layer, at least an LDD region being formed in the active layer, a gate insulating film being provided between the active layer and the substrate, and a gate electrode being provided between the gate insulating film and the substrate, wherein at least a portion of the LDD region of the pixel TFT is formed so as to overlap with the gate electrode of the pixel TFT, wherein at least a portion of the LDD region of the n-channel TFT in the drive circuit is formed so as to overlap with the gate electrode of the n-channel TFT in the drive circuit, and wherein all of the LDD region of the p-channel TFT of the drive circuit is formed so as to overlap with a gate electrode in the p-channel TFT in the drive circuit.

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